BTA420Y-800BT
3Q Hi-Com Triac
7 March 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally
insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high
dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated
junction temperature (T
j(max)
= 150 °C) without the aid of a snubber. It is used in applications where
"high junction operating temperature capability" is required.
2. Features and benefits
•
•
•
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
2500 V RMS isolation voltage capability
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature capability
High voltage capability
Least sensitive gate for highest noise immunity
Internally insulated package
Internally isolated mounting base
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
•
•
•
•
Applications subject to high temperature
Heating controls
High power motor control
High power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 100 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
800
20
200
220
150
Unit
V
A
A
A
°C
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
junction temperature
WeEn Semiconductors
BTA420Y-800BT
3Q Hi-Com Triac
Symbol
I
GT
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
-
-
1800
Typ
-
-
-
-
1.2
-
Max
50
50
50
60
1.5
-
Unit
mA
mA
mA
mA
V
V/µs
Static characteristics
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 24 A; T
j
= 25 °C;
Fig. 10
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 20 A;
dV
com
/dt = 10 V/µs; gate open circuit
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 20 A;
dV
com
/dt = 1 V/µs; gate open circuit
Dynamic characteristics
dI
com
/dt
25
65
-
-
-
-
A/ms
A/ms
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78D)
6. Ordering information
Table 3. Ordering information
Type number
BTA420Y-800BT
Package
Name
TO-220AB
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220
Version
SOT78D
BTA420Y-800BT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
7 March 2018
2 / 13
WeEn Semiconductors
BTA420Y-800BT
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
25
I
T(RMS )
(A)
20
aaa-013157
Conditions
Min
-
Max
800
20
200
220
200
100
2
5
0.5
150
150
aaa-013078
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
mb
≤ 100 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; sine-wave pulse
I
G
= 100 mA
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
80
100 °C
I
T(RMS )
(A)
60
15
40
10
20
5
0
-50
0
50
100
150
T
mb
(°C)
0
10
-2
10
-1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz; T
mb
= 100 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA420Y-800BT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
7 March 2018
3 / 13
WeEn Semiconductors
BTA420Y-800BT
3Q Hi-Com Triac
30
P
tot
(W)
24
aaa-013079
conduction form
angle
factor
(degrees)
α
30
60
90
120
180
2.816
1.976
1.570
1.329
1.110
α
α = 180°
120 °
90°
60°
30°
18
12
6
0
0
5
10
15
20
I
T(RMS)
(A)
25
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
I
TSM
(A)
200
160
120
80
40
0
240
003aak705
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA420Y-800BT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
7 March 2018
4 / 13
WeEn Semiconductors
BTA420Y-800BT
3Q Hi-Com Triac
10
4
I
TSM
(A)
10
3
aaa-013080
(1)
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA420Y-800BT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
7 March 2018
5 / 13
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