StrongIRFET™
IRFI7440GPbF
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
40V
2.0m
2.5m
95A
G
S
max
I
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
G
S
D
TO-220AB Full-Pak
D
Drain
S
Source
Base part number
IRFI7440GPbF
Package Type
TO-220 Full-Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFI7440GPbF
RDS(on), Drain-to -Source On Resistance (m
)
6
ID = 57A
5
100
80
ID, Drain Current (A)
18
20
4
T J = 125°C
60
3
40
2
T J = 25°C
1
4
6
8
10
12
14
16
20
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximium Rating
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
IRFI7440GPbF
Max.
95
67
380
42
0.28
± 20
-55 to + 175
300
10 lbf·in (1.1 N·m)
201
407
See Fig. 15, 16, 23a, 23b
Units
A
W
W/°C
V
°C
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Junction-to-Ambient
R
JA
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
R
G
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
mJ
A
mJ
Units
°C/W
Typ.
–––
–––
Max.
3.6
65
Min.
40
–––
–––
2.2
–––
–––
–––
–––
–––
Typ. Max.
––– –––
37
2.0
3.0
–––
–––
–––
–––
2.3
–––
2.5
3.9
1.0
150
100
-100
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 2mA
m V
GS
= 10V, I
D
= 57A
V
V
DS
= V
GS
, I
D
= 100µA
V
DS
= 40V, V
GS
= 0V
µA
V
DS
= 40V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
Notes:
Repetitive
rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 124µH, R
G
= 50, I
AS
= 57A, V
GS
=10V.
I
SD
57A, di/dt
962A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 29A, V
GS
=10V.
2
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November 18, 2014
IRFI7440GPbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
144
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
S V
DS
= 10V, I
D
=57A
88
132
I
D
= 57A
22
–––
V
DS
= 20V
nC
30
–––
V
GS
= 10V
58
–––
11
–––
V
DD
= 20V
I
D
= 57A
42
–––
ns
56
–––
R
G
= 2.7
V
GS
= 10V
36
–––
4549
689
450
835
981
–––
–––
–––
–––
–––
V
GS
= 0V
V
DS
= 25V
pF
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Diode Characteristics
Typ. Max. Units
–––
–––
–––
5.1
36
38
45
49
2.1
95
A
380
1.3
–––
–––
–––
–––
–––
–––
V
D
G
S
T
J
= 25°C,I
S
= 57A,V
GS
= 0V
V
DD
= 34V
I
F
= 57A,
di/dt = 100A/µs
V/ns T
J
= 175°C,I
S
=57A, V
DS
= 40V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
nC
T
J
= 125°C
ns
A
T
J
= 25°C
3
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November 18, 2014
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFI7440GPbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
4.5V
100
1
4.5V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 175°C
0.1
0.01
0.1
1
10
V DS, Drain-to-Source Voltage (V)
10
0.1
1
V DS, Drain-to-Source Voltage (V)
10
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 57A
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
T J = 25°C
VDS = 10V
60µs
PULSE WIDTH
1.0
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
ID= 57A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 32V
VDS= 20V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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© 2014 International Rectifier
Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
Submit Datasheet Feedback
November 18, 2014
1000
IRFI7440GPbF
100µsec
100
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
OPERATION
IN THIS
AREA
LIMITED BY
RDS(on)
1msec
10
10msec
10
T J = 25°C
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
DC
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
10
VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.7
50
Id = 2mA
48
46
Energy (µJ)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
44
42
40
38
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
-5
0
5
10
15
20
25
30
35
40
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m
)
Fig 12.
Typical C
oss
Stored Energy
5.0
4.5
4.0
3.5
3.0
2.5
2.0
0
20
40
60
80
100
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS =10V
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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© 2014 International Rectifier
Submit Datasheet Feedback
November 18, 2014
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