c. Maximum under steady state conditions is 54 °C/W.
d. Package limited.
e. See solder profile
(www.vishay.com/doc?73257).
The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 62860
S13-1665-Rev. A, 29-Jul-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7157DP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current (t
p
= 100 µs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 5 A, V
GS
= 0 V
- 0.64
88
120
31
57
T
C
= 25 °C
- 60
- 300
- 1.1
140
200
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 10 V, R
L
= 1
I
D
- 10 A, V
GEN
= - 4.5 V, R
g
= 1
V
DD
= - 10 V, R
L
= 1
I
D
- 10 A, V
GEN
= - 10 V, R
g
= 1
f = 1 MHz
0.8
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 20 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 20 A
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
22 000
2470
2515
415
202.5
32.5
51.5
1.5
20
14
220
55
115
120
230
75
2.5
40
28
400
110
200
220
390
150
ns
625
305
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
- 10 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 25 A
V
GS
= - 4.5 V, I
D
= - 20 A
V
GS
= - 2.5 V, I
D
= - 15 A
V
DS
= - 10 V, I
D
= - 25 A
- 40
0.00125
0.00155
0.00240
120
0.00160
0.00200
0.00320
S
- 0.5
- 20
- 14.5
4.1
- 1.4
± 100
-1
-5
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62860
S13-1665-Rev. A, 29-Jul-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7157DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
200
V
GS
= 10 V thru 3 V
160
I
D
- Drain Current (A)
120
150
I
D
- Drain Current (A)
120
90
T
C
= 25
°C
60
80
V
GS
= 2 V
40
30
T
C
= 125
°C
T
C
= - 55
°C
0.0
0.8
1.6
2.4
3.2
4.0
0
0.0
V
GS
= 1 V
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
2.5
0
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.0040
Transfer Characteristics
30000
C
iss
0.0034
R
DS(on)
- On-Resistance (Ω)
V
GS
= 2.5 V
24000
C - Capacitance (pF)
0.0028
18000
0.0022
V
GS
= 4.5 V
12000
0.0016
6000
V
GS
= 10 V
0
20
40
60
80
100
C
oss
0.0010
0
0
C
rss
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
I
D
= 20 A
8
V
DS
= 10 V
6
V
DS
= 5 V
4
V
DS
= 15 V
R
DS(on)
- On-Resistance (Normalized)
V
GS
- Gate-to-Source Voltage (V)
1.6
I
D
= 20 A
1.4
V
GS
= 10 V
1.2
V
GS
= 2.5 V
1.0
2
0.8
0
0
90
180
270
360
450
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62860
S13-1665-Rev. A, 29-Jul-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7157DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.010
10
I
S
- Source Current (A)
1
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
0.008
I
D
= 20 A
0.006
0.1
0.004
T
J
= 125
°C
0.002
T
J
= 25
°C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
500
On-Resistance vs. Gate-to-Source Voltage
0.4
I
D
= 250 μA
400
V
GS(th)
- Variance (V)
0
I
D
= 1 mA
Power (W)
150
0.2
300
200
- 0.2
100
- 0.4
- 50
- 25
0
25
50
75
100
125
0
0.001
0.01
0.1
1
10
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
1000
I
DM
Limited
100
I
D
- Drain Current (A)
I
D
Limited
10
Single Pulse Power, Junction-to-Ambient
100 μs
1 ms
10 ms
100 ms
1
Limited by R
DS(on)
*
1s
10 s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
DC
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62860
S13-1665-Rev. A, 29-Jul-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7157DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
210
125
168
I
D
- Drain Current (A)
100
84
Package Limited
Power (W)
126
75
50
42
25
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62860
S13-1665-Rev. A, 29-Jul-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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