Si4465ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
8
7
6
5
D
D
D
D
G
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
C
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
SM
P
D
T
J
, T
stg
Limit
-8
±8
- 13.7
- 11
- 20
- 16
- 40
- 2.5
40
3.0
1.95
6.5
4.2
- 55 to 150
Unit
V
A
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t
≤
10 s.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
34
67
15
Maximum
41
80
19
Unit
°C/W
Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
1
Si4465ADY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
F
= - 2.1 A, dI/dt = 100 A/µs
V
DD
= - 4 V, R
L
= 4
Ω
I
D
≅
- 10 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
V
DS
= - 4 V, V
GS
= - 4.5 V, I
D
= - 14 A
55
6
10
2.5
33
170
168
112
85
81
3.8
50
255
255
170
130
125
nC
ns
Ω
85
nC
a
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
Test Conditions
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 8 V, V
GS
= 0 V
V
DS
= - 8 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥ −
5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 14 A
V
GS
= - 2.5 V, I
D
= - 12 A
V
GS
= 1.8 V, I
D
= 10 A
V
DS
= - 10 V, I
D
= - 14 A
I
S
= - 2.1 A, V
GS
= 0 V
Min.
- 0.45
Typ.
Max.
- 1.0
± 100
-1
-5
Unit
V
nA
µA
A
- 20
0.0075
0.0092
0.013
58
- 0.57
- 1.2
0.009
0.011
0.016
Ω
S
V
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
Si4465ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
V
GS
= 5
V
thru 2
V
32
I
D
- Drain C
u
rrent (A)
1.5
V
I
D
- Drain C
u
rrent (A)
1.6
2.0
24
1.2
16
0.8
8
1
V
0
0.0
0.4
T
C
= 125 °C
25 °C
- 55 °C
0.5
1.0
1.5
2.0
2.5
0.0
0.0
0.3
0.6
0.9
1.2
1.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.020
8500
Transfer Characteristics
R
D S(on)
- On-Resistance (Ω)
0.017
C - Capacitance (pF)
6800
C
iss
5100
0.014
V
GS
= 1.8
V
0.011
V
GS
= 2.5
V
0.008
V
GS
= 4.5
V
0.005
0
8
16
24
32
40
3400
C
oss
C
rss
1700
0
0.0
1.6
3.2
4.8
6.4
8.0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
8.0
I
D
= 14 A
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
6.4
V
DS
= 4
V
4.8
R
DS(on)
- On-Resistance
1.3
(
N
ormalized)
1.5
Capacitance
V
GS
= 1.8
V
I
D
= 14 A
V
GS
= 4.5
V
I
D
= 14 A
1.1
3.2
V
DS
= 6
V
1.6
0.9
0.0
0
21
42
63
84
105
Q
g
- Total Gate Charge (nC)
0.7
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
3
Si4465ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.05
10
T
J
= 150 °C
R
DS(on)
- On-Resistance (Ω)
0.04
I
S
- Source Current (A)
0.03
T
J
= 25 °C
1
0.02
125 °C
0.01
25 °C
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
- Source-to-Drain
Voltage
(V)
0.00
0
1
2
3
4
5
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.4
100
On-Resistance vs. Gate-to-Source Voltage
0.3
V
GS(th)
V
ariance (
V
)
80
0.2
I
D
= 250
µA
Power (W)
I
D
= 5 mA
0.1
60
40
0.0
20
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
I
DM
Limited
Limited
by
R
DS(on)
*
I
D
- Drain Current (A)
10
10 ms
100 ms
1
1s
10 s
DC
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
10
1
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operatin Area
www.vishay.com
4
Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
Si4465ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
25
20
I
D
- Drain C
u
rrent (A)
15
10
5
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating
8.0
2.0
6.4
Po
w
er Dissipation (
W
)
Po
w
er Dissipation (
W
)
1.6
4.8
1.2
3.2
0.8
1.6
0.4
0.0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
