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SS9013GBU

产品描述Bipolar Transistors - BJT PNP/40V/0.5A
产品类别半导体    分立半导体   
文件大小158KB,共6页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
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SS9013GBU概述

Bipolar Transistors - BJT PNP/40V/0.5A

SS9013GBU规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
ON Semiconductor(安森美)
产品种类
Product Category
Bipolar Transistors - BJT
RoHSDetails
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
TO-92-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max20 V
Collector- Base Voltage VCBO40 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.16 V
Maximum DC Collector Current0.5 A
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max202
高度
Height
4.7 mm
长度
Length
4.7 mm
系列
Packaging
Bulk
宽度
Width
3.93 mm
Continuous Collector Current0.5 A
DC Collector/Base Gain hfe Min64
Pd-功率耗散
Pd - Power Dissipation
625 mW
工厂包装数量
Factory Pack Quantity
1000
单位重量
Unit Weight
0.006314 oz

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
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device numbers. The most current and up-to-date ordering information can be found at
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Please
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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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SS9013GBU相似产品对比

SS9013GBU SS9013FBU SS9013GTA SS9013FTF SS9013HTA SS9013HBU SS9013FTA
描述 Bipolar Transistors - BJT PNP/40V/0.5A Bipolar Transistors - BJT NPN/40V/500MA Bipolar Transistors - BJT NPN Epitaxial Silicon TRANS NPN 20V 0.5A TO-92 TRANS NPN 20V 0.5A TO-92 TRANS NPN 20V 0.5A TO-92 TRANS NPN 20V 0.5A TO-92
晶体管类型 - - - NPN NPN NPN NPN
电流 - 集电极(Ic)(最大值) - - - 500mA 500mA 500mA 500mA
电压 - 集射极击穿(最大值) - - - 20V 20V 20V 20V
不同 Ib,Ic 时的 Vce 饱和值(最大值) - - - 600mV @ 50mA,500mA 600mV @ 50mA,500mA 600mV @ 50mA,500mA 600mV @ 50mA,500mA
电流 - 集电极截止(最大值) - - - 100nA(ICBO) 100nA(ICBO) 100nA(ICBO) 100nA(ICBO)
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值) - - - 78 @ 50mA,1V 144 @ 50mA,1V 144 @ 50mA,1V 78 @ 50mA,1V
功率 - 最大值 - - - 625mW 625mW 625mW 625mW
工作温度 - - - 150°C(TJ) 150°C(TJ) 150°C(TJ) 150°C(TJ)
安装类型 - - - 通孔 通孔 通孔 通孔
封装/外壳 - - - TO-226-3,TO-92-3(TO-226AA)(成形引线) TO-226-3,TO-92-3(TO-226AA)(成形引线) TO-226-3,TO-92-3 标准主体(!--TO-226AA) TO-226-3,TO-92-3(TO-226AA)(成形引线)
供应商器件封装 - - - TO-92-3 TO-92-3 TO-92-3 TO-92-3
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