VS-GA200SA60UP
www.vishay.com
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 100 A
FEATURES
• Ultrafast: optimized for minimum saturation
voltage and speed up to 30 kHz in hard
switching, > 200 kHz in resonant mode
•
•
•
•
•
•
•
600 V
1.92 V
15 V
100 A
8 kHz to 30 kHz
SOT-227
Single switch no diode
SOT-227
PRIMARY CHARACTERISTICS
V
CES
V
CE(on)
(typical)
V
GE
I
C
Speed
Package
Circuit configuration
Very low conduction and switching losses
Fully isolate package (2500 V
AC/RMS
)
Very low internal inductance ( 5 nH typical)
Industry standard outline
UL approved file E78996
Designed and qualified for industrial level
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Lower overall losses available at frequencies = 20 kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter breakdown voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Gate to emitter voltage
Reverse voltage avalanche energy
RMS isolation voltage
Maximum power dissipation
Operating junction and storage temperature range
Mounting torque
SYMBOL
V
CES
I
C
I
CM
I
LM
V
GE
E
ARV
V
ISOL
P
D
T
J
, T
Stg
6-32 or M3 screw
Repetitive rating; pulse width limited by
maximum junction temperature
Any terminal to case, t = 1 min
T
C
= 25 °C
T
C
= 100 °C
V
CC
= 80 % (V
CES
), V
GE
= 20 V, L = 10 μH,
R
g
= 2.0
,
see fig. 13a
T
C
= 25 °C
T
C
= 100 °C
TEST CONDITIONS
MAX.
600
200
100
400
400
± 20
160
2500
500
200
-55 to +150
1.3 (12)
V
mJ
V
W
°C
Nm (lbf.in)
A
UNITS
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction and storage temperature range
Thermal resistance, junction to case
Thermal resistance case to heatsink
Weight
Mounting torque
Case style
Torque to terminal
Torque to heatsink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
Flat, greased, surface
TEST CONDITIONS
MIN.
-55
-
-
-
-
-
TYP.
-
-
0.05
30
-
-
MAX.
150
0.25
-
-
1.1 (9.7)
1.8 (15.9)
SOT-227
g
Nm (lbf.in)
Nm (lbf.in)
°C/W
UNITS
Revision: 23-Oct-17
Document Number: 94364
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GA200SA60UP
www.vishay.com
Vishay Semiconductors
SYMBOL
V
(BR)CES
V
(BR)ECS
V
(BR)CES
/T
J
TEST CONDITIONS
V
GE
= 0 V, I
C
= 250 μA
V
GE
= 0 V, I
C
= 1.0 A
Pulse width
80 μs; duty factor
0.1 %
V
GE
= 0 V, I
C
= 10 mA
I
C
= 100 A
V
GE
= 15 V
See fig. 2, 5
MIN.
600
18
-
-
-
-
3.0
-
79
-
-
-
TYP.
-
-
0.38
1.60
1.92
1.54
-
-11
-
-
-
-
MAX.
-
-
-
1.9
-
-
6.0
-
-
1.0
10
± 250
mV/°C
S
mA
nA
V
V
UNITS
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Emitter to collector breakdown voltage
Temperature coefficient of breakdown
voltage
Collector to emitter saturation voltage
Gate threshold voltage
Temperature coefficient of threshold voltage
Forward transconductance
Zero gate voltage collector current
Gate to emitter leakage current
V/°C
V
CE(on)
V
GE(th)
V
GE(th)
/T
J
g
fe
I
CES
I
GES
I
C
= 200 A
I
C
= 100 A, T
J
= 150 °C
V
CE
= V
GE
, I
C
= 250 μA
V
CE
= V
GE
, I
C
= 2.0 mA
V
CE
= 100 V, I
C
= 100 A
Pulse width 5.0 μs, single shot
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C
V
GE
= ± 20 V
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate-emitter charge (turn-on)
Gate-collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Internal emitter inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
SYMBOL
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
TEST CONDITIONS
I
C
= 100 A
V
CC
= 400 V
V
GE
= 15 V; See fig. 8
T
J
= 25 °C
I
C
= 100 A
V
CC
= 480 V
V
GE
= 15 V
R
g
= 2.0
Energy losses include “tail”
See fig. 9, 10, 14
T
J
= 150 °C
I
C
= 100 A, V
CC
= 480 V
V
GE
= 15 V, R
g
= 2.0
Energy losses include “tail”
See fig. 10, 11, 14
Measured 5 mm from package
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz; See fig. 7
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
770
100
260
54
79
130
300
0.98
3.48
4.46
56
75
160
460
7.24
5.0
16 500
1000
200
MAX.
1200
150
380
-
-
200
450
-
-
7.6
-
-
-
-
-
-
-
-
-
pF
mJ
nH
ns
mJ
ns
nC
UNITS
Revision: 23-Oct-17
Document Number: 94364
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GA200SA60UP
www.vishay.com
Vishay Semiconductors
200
Triangular wave:
I
160
Load Current (A)
120
Clamp voltage:
80 % of rated
For both:
Duty cycle: 50 %
T
J
= 125 °C
T
sink
= 90 °C
Gate drive as specified
Power dissipation = 140 W
60 % of rated
voltage
80
Square wave:
I
40
Ideal diodes
0
0.1
1
10
100
f - Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of Fundamental)
I
C
- Collector to Emitter Current (A)
Maximum DC Collector Current (A)
1000
200
150
100
T
J
= 150 °C
100
T
J
= 25 °C
V
GE
= 15 V
20 µs pulse width
10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
50
0
25
50
75
100
125
150
V
CE
- Collector to Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
T
C
- Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
V
CE
- Collector to Emitter Voltage (V)
I
C
- Collector to Emitter Current (A)
1000
3
V
GE
= 15 V
80 µs pulse width
I
C
= 400 A
T
J
= 150 °C
T
J
= 25 °C
100
I
C
= 200 A
2
I
C
= 100 A
V
GE
= 25 V
5 µs pulse width
10
5.0
6.0
7.0
8.0
1
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
V
GE
- Gate to Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
T
J
- Junction Temperature (°C)
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Revision: 23-Oct-17
Document Number: 94364
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GA200SA60UP
www.vishay.com
Vishay Semiconductors
1
Z
thJC
- Thermal Response
D = 0.50
0.1
D = 0.20
D = 0.10
D = 0.05
P
DM
t
1
t
2
0.01
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
30 000
25 000
60
Total Switching Losses (mJ)
C - Capacitance (pF)
V
GE
= 0 V, f = 1 MHz
C
ies
= C
ge
+ C
gc
, C
ce
shorted
C
res
= C
gc
C
oes
= C
ce
+ C
gc
C
ies
50
40
30
20
10
0
V
CC
= 480 V
V
GE
= 15 V
T
J
= 25 °C
I
C
= 200 A
20 000
15 000
C
oes
10 000
5000
0
1
10
100
C
res
0
10
20
30
40
50
60
V
CE
- Collector to Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
R
G
- Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
20
100
V
GE
- Gate to Emitter Voltage (V)
16
Total Switching Losses (mJ)
V
CC
= 400 V
I
C
= 110 A
I
C
= 350 A
12
10
I
C
= 200 A
8
4
I
C
= 100 A
R
G
= 2.0
Ω
V
GE
= 15 V
V
CC
= 480 V
0
0
200
400
600
800
1
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
Q
G
- Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
T
J
- Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs. Junction Temperature
Revision: 23-Oct-17
Document Number: 94364
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GA200SA60UP
www.vishay.com
Vishay Semiconductors
60
Total Switching Losses (mJ)
50
40
30
20
R
G
= 2.0
Ω
T
J
= 150 °C
V
CC
= 480 V
V
GE
= 15 V
L
V
C
*
50 V
1000 V
1
D.U.T.
2
* Driver same type as D.U.T.; V
C
= 80 % of V
CE
(max)
10
0
0
100
200
300
400
Note:
Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated I
d
Fig. 13a - Clamped Inductive Load Test Circuit
I
C
- Collector Current (A)
Fig. 11 - Typical Switching Losses vs. Collector Current
0 V to 480 V
1000
480 µF
960 V
V
GE
= 20 V
T
J
= 125 °C
R
L
=
480 V
4 x I
C
at 25 °C
I
C
- Collector Current (A)
Fig. 13b - Pulsed Collector Current Test Circuit
100
I
C
L
Driver*
50 V
D.U.T.
V
C
Safe operating area
10
1
10
100
1000
1
1000 V
2
3
V
CE
- Collector to Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
* Driver same type
as D.U.T., V
C
= 480 V
Fig. 14a - Switching Loss Test Circuit
1
2
90 %
3
V
C
90 %
10 %
t
d(off)
10 %
I
C
5%
t
r
t
d(on)
E
on
E
ts
= (E
on
+ E
off
)
E
off
t
f
t = 5 µs
Fig. 14b - Switching Loss Waveforms
Revision: 23-Oct-17
Document Number: 94364
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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