Standard Power MOSFET
IRFP 264
V
DSS
= 250 V
I
D (cont)
= 38 A
R
DS(on)
= 0.075
Ω
N-Channel Enhancement Mode
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum Ratings
250
250
±20
±30
38
150
38
28
5
280
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
°C
°C
°C
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
International standard package
JEDEC TO-247 AD
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
High commutating dv/dt rating
Fast switching times
l
l
l
l
l
l
l
l
l
l
l
l
Mounting torque
1.13/10 Nm/lb.in.
6
300
g
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
250
2
4
±100
T
J
= 25°C
T
J
= 125°C
25
250
0.075
V
V
nA
µA
µA
Ω
Applications
Switch-mode and resonant-mode
power supplies
Motor controld
Uninterruptible Power Supplies (UPS)
DC choppers
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
V
GS
= 10 V, I
D
= 23 A
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
96668(1/96)
© 2000 IXYS All rights reserved
1-2
IRFP 264
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
20
4800
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
745
280
22
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 38 A
R
G
= 3.2
Ω,
(External)
99
110
92
210
V
GS
= 10 V, V
DS
= 200 V, I
D
= 38 A
35
98
0.45
0.25
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
1
2
3
TO-247 AD Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 23 A, pulse test
Dim.
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Test Conditions
V
GS
= 0 V
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
38
150
1.8
370
A
A
V
ns
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185 .209
A
1
2.2
2.54
.087 .102
A
2
2.2
2.6
.059 .098
b
1.0
1.4
.040 .055
b
1
1.65
2.13
.065 .084
b
2
2.87
3.12
.113 .123
C
.4
.8
.016 .031
D 20.80 21.46
.819 .845
E
15.75 16.26
.610 .640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780 .800
L1
4.50
.177
∅
P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170 .216
S
6.15 BSC
242 BSC
Repetitive; pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= I
S
, -di/dt = 100 A/µs, V
R
= 100 V
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
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