Si9939DY
Vishay Siliconix
Complimentary 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
N Ch
l
30
r
DS(on)
(W)
0.05 @ V
GS
= 10 V
0.07 @ V
GS
= 6 V
0.08 @ V
GS
= 4.5 V
0.10 @ V
GS
= –10 V
0.12 @ V
GS
= –6V
0.16 @ V
GS
= –4.5 V
I
D
(A)
"3.5
"3
"2.5
"3.5
"3
"2.5
P-Channel
P Ch
l
–30
30
D
1
D
1
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
1
D
2
D
2
S
1
N-Channel MOSFET
D
2
D
2
G
2
G
1
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
N-Channel
30
"20
"3.5
"2.8
"20
1.7
2.0
1.3
P-Channel
–30
"20
"3.5
"2.8
"20
–1.7
Unit
V
A
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 70146
S-00652—Rev. G, 27-Mar-00
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S
FaxBack 408-970-5600
Symbol
R
thJA
N- or P- Channel
62.5
Unit
_C/W
1
Si9939DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 24 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= –24 V, V
GS
= 0 V
V
DS
= 15 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= –15 V, V
GS
= 0 V, T
J
= 70_C
V
DS
w
5 V, V
GS
= 10 V
On-State Drain Current
b
O S
D i C
I
D(on)
V
DS
v
–5 V, V
GS
= –10 V
V
DS
w
5 V, V
GS
= 4.5 V
V
DS
v
–5 V, V
GS
= –4.5 V
V
GS
= 10 V, I
D
= 3.5 A
V
GS
= –10 V, I
D
= 3.5 A
O S
R i
Drain-Source On-State Resistance
b
D i S
V
GS
= 6 V, I
D
= 3 A
r
DS(on)
V
GS
= – 6 V, I
D
= 3 A
V
GS
= 4.5 V, I
D
= 2.5 A
V
GS
= –4.5 V, I
D
= 2 A
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 3.5 A
V
DS
= –15 V, I
D
= –3.5 A
I
S
= 1.7 A, V
GS
= 0 V
I
S
= –1.7 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
–20
3.5
–3.5
0.04
0.074
0.045
0.090
0.054
0.115
9
6
0.75
–0.75
1.2
–1.2
V
0.05
0.10
0.07
0.12
0.08
0.16
S
W
A
N-Ch
P-Ch
1.0
–1.0
"100
1
–1
5
–5
mA
A
nA
V
Symbol
Test Condition
Min
Typ
a
Max
Unit
Diode Forward Voltage
b
V
SD
Dynamic
a
Total Gate Charge
Q
g
N-Channel
N Ch
l
V
DS
= 10 V V
GS
= 10 V I
D
= 3.5 A
V,
V,
35
Gate-Source Charge
Q
gs
P-Channel
V
DS
= –10 V, V
GS
= –10 V
I
D
= –3.5 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
N Ch
l
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
P-Channel
V
DD
= –15 V R
L
= 15
W
15 V,
I
D
^
–1 A, V
GEN
= –10 V, R
G
= 6
W
1
10
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
I
F
= 3.5 A, di/dt = 100 A/ms
N-Ch
P-Ch
14
14.5
1.9
2.7
2.8
3.5
10
11
10
11
26
30
10
12
60
40
30
30
40
40
50
50
50
50
120
100
ns
35
35
nC
C
Gate-Drain Charge
Q
gd
Turn-On Delay Time
t
d(on)
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Fall Time
t
f
Source-Drain Reverse Recovery Time
t
rr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
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FaxBack 408-970-5600
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Document Number: 70146
S-00652—Rev. G, 27-Mar-00
Si9939DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 10 thru 5 V
4V
16
I
D
– Drain Current (A)
I
D
– Drain Current (A)
16
20
N CHANNEL
Transfer Characteristics
12
12
8
8
T
C
= 125_C
4
25_C
–55_C
0
4
3V
2, 1 V
0
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
1400
1200
r
DS(on)
– On-Resistance (
Ω
)
0.16
C – Capacitance (pF)
1000
800
600
400
200
0
0
6
12
18
24
30
0
6
C
rss
C
oss
Capacitance
0.12
0.08
V
GS
= 4.5 V
6V
C
iss
0.04
10 V
0
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
Gate Charge
2.0
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 3.5 A
V
GS
– Gate-to-Source Voltage (V)
V
GS
= 10 V
I
D
= 3.5 A
6
r
DS(on)
– On-Resistance (
Ω
)
(Normalized)
6
9
12
15
8
1.6
1.2
4
0.8
2
0.4
0
0
3
0
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
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S
FaxBack 408-970-5600
Document Number: 70146
S-00652—Rev. G, 27-Mar-00
3
Si9939DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
T
J
= 150_C
10
I
S
– Source Current (A)
r
DS(on)
– On-Resistance (
Ω
)
0.3
0.4
N CHANNEL
On-Resistance vs. Gate-to-Source Voltage
0.2
T
J
= 25_C
0.1
I
D
= 3.5 A
1
0
0.4
0.8
1.2
1.6
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.4
40
Single Pulse Power
0.2
V
GS(th)
– Variance (V)
I
D
= 250 mA
–0.0
Power (W)
32
24
–0.2
16
–0.4
8
–0.6
–0.8
–50
0
–25
0
25
50
75
100
125
150
0.01
0.1
Time (sec)
1
10
30
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 62.5_C/W
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
1
10
30
Square Wave Pulse Duration (sec)
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FaxBack 408-970-5600
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Document Number: 70146
S-00652—Rev. G, 27-Mar-00
Si9939DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 10 thru 6V
16
5V
I
D
– Drain Current (A)
12
I
D
– Drain Current (A)
12
16
20
P CHANNEL
Transfer Characteristics
8
4V
4
2, 1 V
3V
0
0
2
4
6
8
10
8
T
C
= 125_C
4
25_C
–55_C
0
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
1500
Capacitance
0.5
r
DS(on)
– On-Resistance (
Ω
)
C – Capacitance (pF)
1200
0.4
900
C
oss
0.3
V
GS
= 4.5 V
0.2
6V
0.1
10 V
0
0
4
8
12
16
20
600
C
iss
300
C
rss
0
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
V
GS
= 10 V
I
D
= 3.5 A
V
GS
– Gate-to-Source Voltage (V)
Gate Charge
2.0
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 3.5 A
6
r
DS(on)
– On-Resistance (
Ω
)
(Normalized)
0
3
6
9
12
15
8
1.6
1.2
4
0.8
2
0.4
0
0
–50
0
50
100
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
www.vishay.com
S
FaxBack 408-970-5600
Document Number: 70146
S-00652—Rev. G, 27-Mar-00
5
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