PD - 95496
IRF1902PbF
HEXFET
®
Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
V
DSS
20V
R
DS(on)
max (mW)
85@V
GS
= 4.5V
170@V
GS
= 2.7V
I
D
4.0A
3.2A
These N-Channel
HEXFET
®
power MOSFET
s from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
S
S
S
G
1
8
A
A
D
D
D
D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
4.2
3.4
17
2.5
1.6
0.02
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
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1
8/10/04
IRF1902PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
20
–––
–––
–––
0.70
5.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.019
–––
–––
–––
–––
–––
–––
–––
–––
5.0
1.2
1.8
5.9
13
23
19
310
130
55
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
85
V
GS
= 4.5V, I
D
= 4.0A
mΩ
170
V
GS
= 2.7V, I
D
= 3.2A
–––
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 10V, I
D
= 4.0A
1.0
V
DS
= 16V, V
GS
= 0V
µA
25
V
DS
= 16V, V
GS
= 0V, T
J
= 70°C
100
V
GS
= 12V
nA
-100
V
GS
= -12V
7.5
I
D
= 4.2A
–––
nC
V
DS
= 10V
–––
V
GS
= 4.5V
–––
V
DD
= 10V
–––
I
D
= 1.0A
ns
–––
R
G
= 53Ω
–––
V
GS
= 4.5V
–––
V
GS
= 0V
–––
pF
V
DS
= 15V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
38
42
4.2
A
17
1.2
57
63
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.5A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.5A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1 in square Cu board
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF1902PbF
100
VGS
TOP
7.0V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
VGS
7.0V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
TOP
2.25V
1
2.25V
1
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
0.1
1
20µs PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.00
2.0
I
D
= 4.2A
ID, Drain-to-Source Current
(Α
)
10.00
T J = 175°C
(Normalized)
T J = 25°C
R
DS(on)
, Drain-to-Source On Resistance
1.5
1.0
0.5
1.00
2.0
2.5
3.0
VDS = 15V
20µs PULSE WIDTH
3.5
4.0
4.5
5.0
V
GS
= 4.5V
0.0
-60
-40
-20
0
20
40
60
80
100
120
140
160
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF1902PbF
10000
6
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds
gd
V
GS
, Gate-to-Source Voltage (V)
I
D
=
4.0A
V
DS
= 16V
V
DS
= 10V
5
C, Capacitance(pF)
1000
4
Ciss
Coss
100
2
Crss
1
10
1
10
100
0
0
1
2
4
5
6
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100.00
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10.00
T J = 150°C
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
100µsec
1msec
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
VDS , Drain-toSource Voltage (V)
100
1.00
VGS = 0V
0.10
0.0
0.5
1.0
1.5
VSD, Source-toDrain Voltage (V)
0.1
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF1902PbF
5.0
V
DS
4.0
R
D
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
3.0
-
V
DD
V
GS
2.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
1.0
Fig 10a.
Switching Time Test Circuit
V
DS
0.0
25
50
75
100
125
150
90%
T
C
, Case Temperature
(°
C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
(Z
thJA
)
D = 0.50
10
0.20
0.10
Thermal Response
0.05
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.1
0.00001
0.0001
0.001
0.01
0.1
t
1
/ t
2
+T
A
1
10
t
2
0.02
1
0.01
J
= P
DM
x Z
thJA
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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