Preliminary
GS864218/36/72(B/C)-xxxV
119- & 209-Pin BGA
Commercial Temp
Industrial Temp
Features
4M x 18, 2M x 36, 1M x 72
72Mb S/DCD Sync Burst SRAMs
250 MHz–167 MHz
1.8 V or 2.5 V V
DD
1.8 V or 2.5 V I/O
• FT pin for user-configurable flow through or pipeline operation
• Single/Dual Cycle Deselect selectable
• IEEE 1149.1 JTAG-compatible Boundary Scan
• ZQ mode pin for user-selectable high/low output drive
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to SCD x18/x36 Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 119- and 209-bump BGA package
• RoHS-compliant 119- and 209-bump BGA packages available
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the
user via the FT mode . Holding the FT mode pin low places the
RAM in Flow Through mode, causing output data to bypass the
Data Output Register. Holding FT high places the RAM in
Pipeline mode, activating the rising-edge-triggered Data Output
Register.
SCD and DCD Pipelined Reads
The GS864218/36/72(B/C)-xxxV is a SCD (Single Cycle
Deselect) and DCD (Dual Cycle Deselect) pipelined synchronous
SRAM. DCD SRAMs pipeline disable commands to the same
degree as read commands. SCD SRAMs pipeline deselect
commands one stage less than read commands. SCD RAMs begin
turning off their outputs immediately after the deselect command
has been captured in the input registers. DCD RAMs hold the
deselect command for one full cycle and then begin turning off
their outputs just after the second rising edge of clock. The user
may configure this SRAM for either mode of operation using the
SCD mode input.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write control
inputs.
FLXDrive™
The ZQ pin allows selection between high drive strength (ZQ low)
for multi-drop bus applications and normal drive strength (ZQ
floating or high) point-to-point applications. See the Output Driver
Characteristics chart for details.
Core and Interface Voltages
The GS864218/36/72(B/C)-xxxV operates on a 1.8 V or 2.5 V
power supply. All inputs are 1.8 V or 2.5 V compatible. Separate
output power (V
DDQ
) pins are used to decouple output noise from
the internal circuits and are 1.8 V or 2.5 V compatible.
Functional Description
Applications
The GS864218/36/72(B/C)-xxxV is a
75,497,472
-bit high
performance synchronous SRAM with a 2-bit burst address
counter. Although of a type originally developed for Level 2
Cache applications supporting high performance CPUs, the device
now finds application in synchronous SRAM applications, ranging
from DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive-edge-
triggered clock input (CK). Output enable (G) and power down
control (ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP or ADSC inputs. In Burst mode, subsequent
burst addresses are generated internally and are controlled by
ADV. The burst address counter may be configured to count in
either linear or interleave order with the Linear Burst Order (LBO)
input. The Burst function need not be used. New addresses can be
loaded on every cycle with no degradation of chip performance.
Parameter Synopsis
-250
Pipeline
3-1-1-1
t
KQ
)
tCycle
Curr (x18)
Curr (x36)
Curr (x72)
t
KQ
tCycle
Curr (x18)
Curr (x36)
Curr (x72)
3.0
4.0
340
410
520
6.5
6.5
245
280
370
-200
3.0
5.0
290
350
435
7.5
7.5
220
250
315
-167
3.5
6.0
260
305
380
8.0
8.0
210
240
300
Unit
ns
ns
mA
mA
mA
ns
ns
mA
mA
mA
Flow Through
2-1-1-1
Rev: 1.03 6/2006
1/35
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS864218/36/72(B/C)-xxxV
GS864272C-xxxV 209-Bump BGA Pin Description
Symbol
A
0
, A
1
An
DQ
A
DQ
B
DQ
C
DQ
D
DQ
E
DQ
F
DQ
G
DQ
H
B
A
, B
B
B
C
,B
D
B
E
, B
F
, B
G
,B
H
NC
CK
GW
E
1
E
3
E
2
G
ADV
ADSP, ADSC
ZZ
FT
LBO
SCD
MCH
MCL
BW
ZQ
TMS
TDI
TDO
TCK
I
I
I
I
O
I
Type
I
I
Description
Address field LSBs and Address Counter Preset Inputs.
Address Inputs
I/O
Data Input and Output pins
I
I
I
—
I
I
I
I
I
I
I
I
I
I
I
I
I
Byte Write Enable for DQ
A
, DQ
B
I/Os; active low
Byte Write Enable for DQ
C
, DQ
D
I/Os; active low
Byte Write Enable for DQ
E
, DQ
F
, DQ
G
, DQ
H
I/Os; active low
No Connect
Clock Input Signal; active high
Global Write Enable—Writes all bytes; active low
Chip Enable; active low
Chip Enable; active low
Chip Enable; active high
Output Enable; active low
Burst address counter advance enable; active low
Address Strobe (Processor, Cache Controller); active low
Sleep Mode control; active high
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
Single Cycle Deselect/Dual Cycle Deselect Mode Control
Must Connect High
Must Connect Low
Byte Enable; active low
FLXDrive Output Impedance Control
(Low = Low Impedance [High Drive], High = High Impedance [Low Drive])
Scan Test Mode Select
Scan Test Data In
Scan Test Data Out
Scan Test Clock
Rev: 1.03 6/2006
3/35
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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