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GS8644Z36E-200V: 产品描述2M X 36 ZBT SRAM, 6.5 ns, PBGA165; 产品类别存储存储; 文件大小733KB，共30页; 制造商GSI Technology; 官网地址http://www.gsitechnology.com/; 标准

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GS8644Z36E-200V概述

2M X 36 ZBT SRAM, 6.5 ns, PBGA165

2M × 36 ZBT 静态随机存储器, 6.5 ns, PBGA165

GS8644Z36E-200V规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	GSI Technology
零件包装代码	BGA
包装说明	LBGA,
针数	165
Reach Compliance Code	compli
ECCN代码	3A991.B.2.B
Factory Lead Time	8 weeks
最长访问时间	6.5 ns
其他特性	PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY
JESD-30 代码	R-PBGA-B165
JESD-609代码	e1
长度	17 mm
内存密度	75497472 bi
内存集成电路类型	ZBT SRAM
内存宽度	36
湿度敏感等级	3
功能数量	1
端子数量	165
字数	2097152 words
字数代码	2000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	2MX36
封装主体材料	PLASTIC/EPOXY
封装代码	LBGA
封装形状	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
认证状态	Not Qualified
座面最大高度	1.5 mm
最大供电电压 (Vsup)	2 V
最小供电电压 (Vsup)	1.7 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	BALL
端子节距	1 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	15 mm

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Preliminary

GS8644Z18/36E-xxxV

165-Bump BGA

Commercial Temp

Industrial Temp

Features

• NBT (No Bus Turn Around) functionality allows zero wait

Read-Write-Read bus utilization; fully pin-compatible with

both pipelined and flow through NtRAM™, NoBL™ and

ZBT™ SRAMs

• 1.8 V or 2.5 V core power supply and I/O supply

• User-configurable Pipeline and Flow Through mode

• ZQ mode pin for user-selectable high/low output drive

• IEEE 1149.1 JTAG-compatible Boundary Scan

• LBO pin for Linear or Interleave Burst mode

• Pin-compatible with 2Mb, 4Mb, 9Mb, 18Mb, and 36Mb

devices

• Byte write operation (9-bit Bytes)

• 3 chip enable signals for easy depth expansion

• ZZ Pin for automatic power-down

• JEDEC-standard 165-bump BGA package

• RoHS-compliant 165-bump BGA package available

72Mb Pipelined and Flow Through

Synchronous NBT SRAM

250 MHz–133MHz

1.8 V or 2.5 V V

1.8 V or 2.5 V I/O

Because it is a synchronous device, address, data inputs, and

read/write control inputs are captured on the rising edge of the

input clock. Burst order control (LBO) must be tied to a power

rail for proper operation. Asynchronous inputs include the

Sleep mode enable (ZZ) and Output Enable. Output Enable can

be used to override the synchronous control of the output

drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising

edge of the clock input. This feature eliminates complex off-

chip write pulse generation required by asynchronous SRAMs

and simplifies input signal timing.

The GS8644Z18/36E-xxxV may be configured by the user to

operate in Pipeline or Flow Through mode. Operating as a

pipelined synchronous device, in addition to the rising-edge-

triggered registers that capture input signals, the device

incorporates a rising edge triggered output register. For read

cycles, pipelined SRAM output data is temporarily stored by

the edge-triggered output register during the access cycle and

then released to the output drivers at the next rising edge of

clock.

The GS8644Z18/36E-xxxV is implemented with GSI's high

performance CMOS technology and is available in a JEDEC-

standard 165-bump BGA package.

Functional Description

The GS8644Z18/36E-xxxV is a 72Mbit Synchronous Static

SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or

other pipelined read/double late write or flow through read/

single late write SRAMs, allow utilization of all available bus

bandwidth by eliminating the need to insert deselect cycles

when the device is switched from read to write cycles.

Parameter Synopsis

-250 -225 -200 -166 -150 -133 Unit

Pipeline

3-1-1-1

tCycle

Curr (x18)

Curr (x36)

tCycle

Curr (x18)

Curr (x36)

3.0

4.0

385

450

6.5

265

290

3.0

4.4

360

415

6.5

265

290

3.0

5.0

335

385

6.5

265

290

3.0

6.0

305

345

8.0

255

280

3.3

6.7

295

325

8.5

240

265

3.5

7.5

265

295

8.5

225

245

Flow

Through

2-1-1-1

Rev: 1.05 6/2006

1/30

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8644Z36E-200V相似产品对比

	GS8644Z36E-200V	GS8644Z18E-250	GS8644Z18E-V	GS8644Z36E-166V	GS8644Z18E-225I	GS8644Z36E-133I	GS8644Z18E-166I	GS8644Z18E-150I	GS8644Z18E-133I
描述	2M X 36 ZBT SRAM, 6.5 ns, PBGA165	2M X 36 ZBT SRAM, 6.5 ns, PBGA165	2M X 36 ZBT SRAM, 6.5 ns, PBGA165	2M X 36 ZBT SRAM, 6.5 ns, PBGA165	2M X 36 ZBT SRAM, 6.5 ns, PBGA165	2M X 36 ZBT SRAM, 6.5 ns, PBGA165	2M X 36 ZBT SRAM, 6.5 ns, PBGA165	2M X 36 ZBT SRAM, 6.5 ns, PBGA165	2M X 36 ZBT SRAM, 6.5 ns, PBGA165
内存宽度	36	18	36	36	18	36	18	18	18
功能数量	1	1	1	1	1	1	1	1	1
端子数量	165	165	165	165	165	165	165	165	165
组织	2MX36	4MX18	2MX36	2MX36	4MX18	2MX36	4MX18	4MX18	4MX18
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
温度等级	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
是否无铅	不含铅	含铅	-	不含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	符合	不符合	-	符合	不符合	不符合	不符合	不符合	不符合
厂商名称	GSI Technology	GSI Technology	-	GSI Technology	GSI Technology	GSI Technology	GSI Technology	GSI Technology	GSI Technology
零件包装代码	BGA	BGA	-	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	LBGA,	BGA, BGA165,11X15,40	-	LBGA,	BGA, BGA165,11X15,40	BGA, BGA165,11X15,40	BGA, BGA165,11X15,40	BGA, BGA165,11X15,40	BGA, BGA165,11X15,40
针数	165	165	-	165	165	165	165	165	165
Reach Compliance Code	compli	compli	-	compli	compli	compli	compli	compli	compli
ECCN代码	3A991.B.2.B	3A991.B.2.B	-	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B
Factory Lead Time	8 weeks	8 weeks	-	8 weeks	8 weeks	8 weeks	8 weeks	8 weeks	8 weeks
最长访问时间	6.5 ns	6.5 ns	-	7 ns	6.5 ns	8.5 ns	7 ns	7.5 ns	8.5 ns
其他特性	PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE	-	PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE	ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE	ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE	ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE	ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE
JESD-30 代码	R-PBGA-B165	R-PBGA-B165	-	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165
长度	17 mm	17 mm	-	17 mm	17 mm	17 mm	17 mm	17 mm	17 mm
内存密度	75497472 bi	75497472 bi	-	75497472 bi	75497472 bi	75497472 bi	75497472 bi	75497472 bi	75497472 bi
内存集成电路类型	ZBT SRAM	ZBT SRAM	-	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
湿度敏感等级	3	3	-	3	3	3	3	3	3
字数	2097152 words	4194304 words	-	2097152 words	4194304 words	2097152 words	4194304 words	4194304 words	4194304 words
字数代码	2000000	4000000	-	2000000	4000000	2000000	4000000	4000000	4000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	-	70 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-	-	-	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LBGA	BGA	-	LBGA	BGA	BGA	BGA	BGA	BGA
封装形状	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE	GRID ARRAY	-	GRID ARRAY, LOW PROFILE	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY
并行/串行	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	NOT SPECIFIED	-	260	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
认证状态	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.5 mm	1.5 mm	-	1.5 mm	1.5 mm	1.5 mm	1.5 mm	1.5 mm	1.5 mm
最大供电电压 (Vsup)	2 V	2.7 V	-	2 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
最小供电电压 (Vsup)	1.7 V	2.3 V	-	1.7 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
标称供电电压 (Vsup)	1.8 V	2.5 V	-	1.8 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
技术	CMOS	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
端子节距	1 mm	1 mm	-	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	15 mm	15 mm	-	15 mm	15 mm	15 mm	15 mm	15 mm	15 mm
最大时钟频率 (fCLK)	-	250 MHz	-	-	225 MHz	133 MHz	166 MHz	150 MHz	133 MHz
I/O 类型	-	COMMON	-	-	COMMON	COMMON	COMMON	COMMON	COMMON
输出特性	-	3-STATE	-	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装等效代码	-	BGA165,11X15,40	-	-	BGA165,11X15,40	BGA165,11X15,40	BGA165,11X15,40	BGA165,11X15,40	BGA165,11X15,40
电源	-	2.5/3.3 V	-	-	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V
最大待机电流	-	0.12 A	-	-	0.16 A	0.16 A	0.16 A	0.16 A	0.16 A
最小待机电流	-	2.3 V	-	-	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
最大压摆率	-	0.36 mA	-	-	0.37 mA	0.305 mA	0.32 mA	0.31 mA	0.285 mA

GS8644Z36E-200V

GS8644Z36E-200V在线购买

GS8644Z36E-200V概述

GS8644Z36E-200V规格参数

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GS8644Z36E-200V相似产品对比

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