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GS880F32T-11.5

产品描述512K x 18, 256K x 36 8Mb Sync Burst SRAMs
产品类别存储    存储   
文件大小245KB,共25页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
下载文档 详细参数 全文预览

GS880F32T-11.5概述

512K x 18, 256K x 36 8Mb Sync Burst SRAMs

GS880F32T-11.5规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称GSI Technology
零件包装代码QFP
包装说明LQFP, QFP100,.63X.87
针数100
Reach Compliance Codecompli
ECCN代码3A991.B.2.B
最长访问时间11 ns
其他特性FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK)86 MHz
I/O 类型COMMON
JESD-30 代码R-PQFP-G100
JESD-609代码e0
长度20 mm
内存密度8388608 bi
内存集成电路类型CACHE SRAM
内存宽度32
湿度敏感等级3
功能数量1
端子数量100
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX32
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装等效代码QFP100,.63X.87
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源2.5/3.3,3.3 V
认证状态Not Qualified
座面最大高度1.6 mm
最大待机电流0.04 A
最小待机电流3.14 V
最大压摆率0.18 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3.135 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度14 mm

文档预览

下载PDF文档
Preliminary
GS880F18/36T-10/11/11.5/12/14
100 Pin TQFP
Commercial Temp
Industrial Temp
Features
• Flow through mode operation.
• 3.3V +10%/-5% Core power supply.
• 2.5V or 3.3V I/O supply.
• LBO pin for linear or interleaved burst mode.
• Internal input resistors on mode pins allow floating mode pins.
Default to Interleaved Pipelined Mode.
• Byte write (BW) and/or global write (GW) operation.
• Common data inputs and data outputs.
• Clock Control, registered, address, data, and control.
• Internal Self-Timed Write cycle.
• Automatic power-down for portable applications.
• 100-lead TQFP package
-10
-11
-11.5
-12
-14
10ns 11ns 11.5ns 12ns 14ns
Flow Through t
KQ
2-1-1-1
tCycle 10ns 15ns 15ns 15ns 15ns
I
DD
225mA 180mA 180mA 180mA 175mA
512K x 18, 256K x 36
8Mb Sync Burst SRAMs
10ns - 14ns
3.3V VDD
3.3V & 2.5V I/O
broadest access to multiple vendor sources. Boards designed with FT
pin pads tied low may be stuffed with GSI’s Pipeline/Flow through
configurable Burst RAMS or any vendor’s Flow through or
configurable Burst SRAM. Bumps designed with the FT pin location
tied High or floating must employ a non-configurable Flow through
Burst RAM, like this RAM, to achieve Flow through functionality.
88018/32/36T
Byte Write and Global Write
Byte write operation is performed by using byte write enable (BW)
input combined with one or more individual byte write signals (Bx). In
addition, Global Write (GW) is available for writing all bytes at one
time, regardless of the Byte Write control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High) of
the ZZ signal, or by stopping the clock (CK). Memory data is retained
during Sleep mode.
Core and Interface Voltages
The GS880F18/32/36T operates on a 3.3V power supply and all
inputs/outputs are 3.3V and 2.5V compatible. Separate output power
(V
DDQ
) pins are used to de-couple output noise from the internal
circuit.
Functional Description
Applications
The GS880F18/32/36T is a 9,437,184 bit (8,388,608 bit for x32
version) high performance synchronous SRAM with a 2 bit burst
address counter. Although of a type originally developed for Level 2
Cache applications supporting high performance CPU’s, the device
now finds application in synchronous SRAM applications ranging from
DSP main store to networking chip set support.
Controls
Addresses, data I/O’s, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV) and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive edge triggered
clock input (CK). Output enable (G) and power down control (ZZ) are
asynchronous inputs. Burst cycles can be initiated with either ADSP
or ADSC inputs. In Burst mode, subsequent burst addresses are
generated internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or interleave order
with the Linear Burst Order (LBO) input. The Burst function need not
be used. New addresses can be loaded on every cycle with no
degradation of chip performance.
Designing For Compatibility
The JEDEC Standard for Burst RAMS calls for a FT mode pin option
(pin 14 on TQFP). Board sites for Flow through Burst RAMS should
be designed with V
SS
connected to the FT pin location to ensure the
Rev: 1.03 3/2000
1/25
© 2000, Giga Semiconductor, Inc.
N
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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