Datasheet> 器件分类 > 存储> 存储> GS880V37AT-250I

文档预览

GS880V37AT-250I: 产品描述256K x 36 9Mb Sync Burst SRAMs; 产品类别存储存储; 文件大小384KB，共18页; 制造商GSI Technology; 官网地址http://www.gsitechnology.com/

下载文档详细参数选型对比全文预览

GS880V37AT-250I概述

256K x 36 9Mb Sync Burst SRAMs

GS880V37AT-250I规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	GSI Technology
零件包装代码	QFP
包装说明	LQFP,
针数	100
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.B
最长访问时间	2.5 ns
其他特性	PIPELINED ARCHITECTURE
JESD-30 代码	R-PQFP-G100
长度	20 mm
内存密度	9437184 bit
内存集成电路类型	CACHE SRAM
内存宽度	36
湿度敏感等级	3
功能数量	1
端子数量	100
字数	262144 words
字数代码	256000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	256KX36
封装主体材料	PLASTIC/EPOXY
封装代码	LQFP
封装形状	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
认证状态	Not Qualified
座面最大高度	1.6 mm
最大供电电压 (Vsup)	2 V
最小供电电压 (Vsup)	1.6 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	GULL WING
端子节距	0.65 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	14 mm

文档预览

下载PDF文档

全文
预览

GS880V37AT-250/225/200

100-Pin TQFP

Commercial Temp

Industrial Temp

Features

• Single Cycle Deselect (SCD) operation

• 1.8 V +10%/–10% core power supply

• 1.8 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to Interleaved Pipeline mode

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

• Automatic power-down for portable applications

• JEDEC-standard 100-lead TQFP package

256K x 36

9Mb Sync Burst SRAMs

250 MHz–200 MHz

1.8 V V

1.8 V I/O

internally and are controlled by ADV. The burst address

counter may be configured to count in either linear or

interleave order with the Linear Burst Order (LBO) input. The

Burst function need not be used. New addresses can be loaded

on every cycle with no degradation of chip performance.

SCD Pipelined Reads

The GS880V37AT is a SCD (Single Cycle Deselect) pipelined

synchronous SRAM. DCD (Dual Cycle Deselect) versions are

also available. SCD SRAMs pipeline deselect commands one

stage less than read commands. SCD RAMs begin turning off

their outputs immediately after the deselect command has been

captured in the input registers.

Byte Write and Global Write

Byte write operation is performed by using Byte Write enable

(BW) input combined with one or more individual byte write

signals (Bx). In addition, Global Write (GW) is available for

writing all bytes at one time, regardless of the Byte Write

control inputs.

Sleep Mode

Low power (Sleep mode) is attained through the assertion

(High) of the ZZ signal, or by stopping the clock (CK).

Memory data is retained during Sleep mode.

Core and Interface Voltages

The GS880V37AT operates on a 1.8 V power supply. All input

are 1.8 V compatible. Separate output power (V

DDQ

) pins are

used to decouple output noise from the internal circuits and are

1.8 V compatible.

Functional Description

Applications

The GS880V37AT is a 9,437,184-bit high performance

synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache

applications supporting high performance CPUs, the device

now finds application in synchronous SRAM applications,

ranging from DSP main store to networking chip set support.

Controls

Addresses, data I/Os, chip enables (E1, E2, E3), address burst

control inputs (ADSP, ADSC, ADV), and write control inputs

(Bx, BW, GW) are synchronous and are controlled by a

positive-edge-triggered clock input (CK). Output enable (G)

and power down control (ZZ) are asynchronous inputs. Burst

cycles can be initiated with either ADSP or ADSC inputs. In

Burst mode, subsequent burst addresses are generated

Parameter Synopsis

Pipeline

3-1-1-1

1.8 V

tCycle

Curr

(x36)

-250

2.5

4.0

320

-225

2.7

4.4

295

-200

3.0

5.0

265

Unit

Rev: 1.03 7/2004

1/18

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS880V37AT-250I相似产品对比

	GS880V37AT-250I	GS880V37AT	GS880V37AT-225	GS880V37AT-200	GS880V37AT-250	GS880V37AT-225I	GS880V37AT-200I
描述	256K x 36 9Mb Sync Burst SRAMs	256K x 36 9Mb Sync Burst SRAMs	256K x 36 9Mb Sync Burst SRAMs	256K x 36 9Mb Sync Burst SRAMs	256K x 36 9Mb Sync Burst SRAMs	256K x 36 9Mb Sync Burst SRAMs	256K x 36 9Mb Sync Burst SRAMs
是否Rohs认证	不符合	-	不符合	不符合	不符合	不符合	不符合
厂商名称	GSI Technology	-	GSI Technology	GSI Technology	GSI Technology	GSI Technology	GSI Technology
零件包装代码	QFP	-	QFP	QFP	QFP	QFP	QFP
包装说明	LQFP,	-	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,
针数	100	-	100	100	100	100	100
Reach Compliance Code	compliant	-	compli	compli	compliant	compli	compli
ECCN代码	3A991.B.2.B	-	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B
最长访问时间	2.5 ns	-	2.7 ns	3 ns	2.5 ns	2.7 ns	3 ns
其他特性	PIPELINED ARCHITECTURE	-	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
JESD-30 代码	R-PQFP-G100	-	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
长度	20 mm	-	20 mm	20 mm	20 mm	20 mm	20 mm
内存密度	9437184 bit	-	9437184 bi	9437184 bi	9437184 bit	9437184 bi	9437184 bi
内存集成电路类型	CACHE SRAM	-	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
内存宽度	36	-	36	36	36	36	36
湿度敏感等级	3	-	3	3	3	3	3
功能数量	1	-	1	1	1	1	1
端子数量	100	-	100	100	100	100	100
字数	262144 words	-	262144 words	262144 words	262144 words	262144 words	262144 words
字数代码	256000	-	256000	256000	256000	256000	256000
工作模式	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	-	70 °C	70 °C	70 °C	85 °C	85 °C
组织	256KX36	-	256KX36	256KX36	256KX36	256KX36	256KX36
封装主体材料	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LQFP	-	LQFP	LQFP	LQFP	LQFP	LQFP
封装形状	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE	-	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE
并行/串行	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
认证状态	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.6 mm	-	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm
最大供电电压 (Vsup)	2 V	-	2 V	2 V	2 V	2 V	2 V
最小供电电压 (Vsup)	1.6 V	-	1.6 V	1.6 V	1.6 V	1.6 V	1.6 V
标称供电电压 (Vsup)	1.8 V	-	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
表面贴装	YES	-	YES	YES	YES	YES	YES
技术	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
端子形式	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.65 mm	-	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm
端子位置	QUAD	-	QUAD	QUAD	QUAD	QUAD	QUAD
处于峰值回流温度下的最长时间	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	14 mm	-	14 mm	14 mm	14 mm	14 mm	14 mm

GS880V37AT-250I

GS880V37AT-250I概述

GS880V37AT-250I规格参数

文档预览

GS880V37AT-250I相似产品对比

推荐资源