CM1630
LCD and Camera EMI Filter
Array with ESD Protection
Product Description
The CM1630 is a family of pi-style EMI filter arrays with ESD
protection, which integrates four, six and eight filters (C-R-C) in small
form factor UDFN 0.40 mm pitch packages. The CM1630 has
component values of 8.5 pF
−
100
W -
8.5 pF per channel. The
CM1630 has a cut-off frequency of 200 MHz and can be used in
applications with data rates up to 80 Mbps. The parts include ESD
diodes on every pin, which provide a very high level of protection for
sensitive electronic components that may be subjected to electrostatic
discharge (ESD). The ESD protection diodes safely dissipate ESD
strikes of
±15
kV, well beyond the maximum requirement of the
IEC61000-4-2 international standard. Using the MIL-STD-883
(Method 3015) specification for Human Body Model (HBM) ESD, the
pins are protected for contact discharges at greater than
±30
kV.
These devices are particularly well-suited for portable electronics
(e.g. wireless handsets, PDAs, notebook computers) because of their
small package and easy-to-use pin assignments. In particular, the
CM1630 is ideal for EMI filtering and protecting data and control lines
for the I/O data ports, LCD display and camera interface in mobile
handsets.
The CM1630 is housed in space-saving, low-profile 8-, 12- and
16-lead UDFN packages with a 0.4 mm pitch and is available with
lead-free finishing. This new small UDFN package provides up to
42% board space savings vs. the 0.50 mm pitch UDFN packages.
Features
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UDFN8
DE SUFFIX
CASE 517BC
UDFN12
DE SUFFIX
CASE 517BD
UDFN16
DE SUFFIX
CASE 517BE
ELECTRICAL SCHEMATIC
Filter
+
ESDn*
GND
1 of 4, 6 or 8 EMI/RFI Filter Channels
with Integrated ESD Protection
* See Package/Pinout Diagrams for expanded pin information.
100
W
8.5 pF
8.5 pF
Filter
+
ESDn*
MARKING DIAGRAM
TE MG
G
1
1
TE
P30E
P308E
M
G
P30E MG
G
1
= CM1630−04DE
= CM1630−06DE
= CM1630−08DE
= Date Code
= Pb−Free Package
P308E MG
G
•
Four, Six and Eight Channels of EMI Filtering with Integrated
•
•
•
•
•
•
•
•
•
•
•
•
ESD Protection
Pi−Style EMI Filters in a Capacitor−Resistor−Capacitor (C−R−C)
Network
±15
kV ESD Protection on Each Channel
(IEC 61000−4−2 Level 4, Contact Discharge)
±30
kV ESD Protection on Each Channel (HBM)
Greater than 25 dB Attenuation (Typical) at 1 GHz
UDFN Package with 0.40 mm Lead Pitch:
♦
4−ch. = 8−lead UDFN
♦
6−ch. = 12−lead UDFN
♦
8−ch. = 16−lead UDFN
Tiny UDFN Package Size:
♦
8−lead: 1.70 mm x 1.35 mm x 0.50 mm
♦
12−lead: 2.50 mm x 1.35 mm x 0.50 mm
♦
16−lead: 3.30 mm x 1.35 mm x 0.50 mm
Increased Robustness against Vertical Impacts During
Manufacturing Process
These Devices are Pb−Free and are RoHS Compliant
LCD and Camera Data Lines in Mobile Handsets
LCD and Camera Modules
Handheld PCs/PDAs
Wireless Handsets
1
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
CM1630−04DE
CM1630−06DE
CM1630−08DE
Package
UDFN−8
(Pb−Free)
UDFN−12
(Pb−Free)
UDFN−16
(Pb−Free)
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Applications
•
I/O Port Protection for Mobile Handsets, Notebook
Computers, PDAs, etc.
•
EMI Filtering for Data Ports in Cell Phones, PDAs
or Notebook Computers
©
Semiconductor Components Industries, LLC, 2011
April, 2011
−
Rev. 3
Publication Order Number:
CM1630/D
CM1630
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
Rating
−65
to +150
100
500
Units
°C
mW
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Rating
–40 to +85
Units
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS
(Note 1)
Symbol
R
C
TOTAL
C
V
DIODE
I
LEAK
V
SIG
Resistance
Total Channel Capacitance
Capacitance C1
Stand−off Voltage
Diode Leakage Current (Reverse Bias)
Signal Clamp Voltage
Positive Clamp
Negative Clamp
In−system ESD Withstand Voltage
a) Human Body Model, MIL−STD−883,
Method 3015
b) Contact Discharge per
IEC 61000−4−2 Level 4
Dynamic Resistance
Positive
Negative
Cut−off Frequency
Z
SOURCE
= 50
W,
Z
LOAD
= 50
W
Absolute Attenuation @ 1 GHz from 0 dB Level
Absolute Attenuation @ 800 MHz to 6 GHz
from 0 dB Level
Channel R = 100
W,
Channel C = 8.5 pF
Z
SOURCE
= 50
W,
Z
LOAD
= 50
W,
DC Bias = 0 V (Notes 1 and 3)
Z
SOURCE
= 50
W,
Z
LOAD
= 50
W,
DC Bias = 0 V (Notes 1 and 3)
At 2.5 V DC Reverse Bias,
1 MHz, 30 mV AC
At 2.5 V DC Reverse Bias,
1 MHz, 30 mV AC
I
DIODE
= 10
mA
V
DIODE
= 3.3 V
I
LOAD
= 10 mA
I
LOAD
=
−10
mA
(Note 2)
5.6
−0.4
±30
±15
W
Parameter
Conditions
Min
80
14
7.0
Typ
100
17
8.5
6.0
0.1
6.8
−0.8
1.0
Max
120
22
11.0
Units
W
pF
pF
V
mA
V
V
ESD
kV
R
DYN
2.3
0.9
200
30
25
f
C
A
1GHz
A
800MHz
−
6GHz
MHz
dB
dB
1. T
A
= 25°C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Attenuation / RF curves characterized by a network analyzer using microprobes.
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