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GS882V36BD-300I

产品描述512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
产品类别存储    存储   
文件大小722KB,共36页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
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GS882V36BD-300I概述

512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs

GS882V36BD-300I规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称GSI Technology
零件包装代码BGA
包装说明13 X 15 MM, 1 MM PITCH, FBGA-165
针数165
Reach Compliance Code_compli
ECCN代码3A991.B.2.B
最长访问时间5 ns
其他特性FLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 代码R-PBGA-B165
JESD-609代码e0
长度15 mm
内存密度9437184 bi
内存集成电路类型CACHE SRAM
内存宽度36
功能数量1
端子数量165
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织256KX36
封装主体材料PLASTIC/EPOXY
封装代码TBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
座面最大高度1.2 mm
最大供电电压 (Vsup)2 V
最小供电电压 (Vsup)1.6 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度13 mm

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GS882V18/36BB/D-333/300/250/200
119- and 165-Bump BGA
Commercial Temp
Industrial Temp
Features
• FT pin for user-configurable flow through or pipeline operation
• Single/Dual Cycle Deselect selectable
• IEEE 1149.1 JTAG-compatible Boundary Scan
• On-chip read parity checking; even or odd selectable
• ZQ mode pin for user-selectable high/low output drive
• 1.8 V +10%/–10% core power supply
• 1.8 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to SCD x18/x36 Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 119- and 165-bump BGA packages
• Pb-Free 119-bump and 165-bump packages available
512K x 18, 256K x 36
9Mb SCD/DCD Sync Burst SRAMs
333 MHz–200 MHz
1.8 V V
DD
1.8 V I/O
Data Output Register. Holding FT high places the RAM in
Pipeline mode, activating the rising-edge-triggered Data Output
Register.
Functional Description
Applications
The GS882V18/36B is a 9,437,184-bit high performance
synchronous SRAM with a 2-bit burst address counter. Although
of a type originally developed for Level 2 Cache applications
supporting high performance CPUs, the device now finds
application in synchronous SRAM applications, ranging from
DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive-edge-
triggered clock input (CK). Output enable (G) and power down
control (ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP or ADSC inputs. In Burst mode, subsequent
burst addresses are generated internally and are controlled by
ADV. The burst address counter may be configured to count in
either linear or interleave order with the Linear Burst Order (LBO)
input. The Burst function need not be used. New addresses can be
loaded on every cycle with no
degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the
user via the FT mode . Holding the FT mode pin low places the
RAM in Flow Through mode, causing output data to bypass the
SCD and DCD Pipelined Reads
The GS882V18/36B is a SCD (Single Cycle Deselect) and
DCD (Dual Cycle Deselect) pipelined synchronous SRAM.
DCD SRAMs pipeline disable commands to the same degree
as read commands. SCD SRAMs pipeline deselect commands
one stage less than read commands. SCD RAMs begin turning
off their outputs immediately after the deselect command has
been captured in the input registers. DCD RAMs hold the
deselect command for one full cycle and then begin turning off
their outputs just after the second rising edge of clock. The user
may configure this SRAM for either mode of operation using
the SCD mode input.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
FLXDrive™
The ZQ pin allows selection between high drive strength (ZQ
low) for multi-drop bus applications and normal drive strength
(ZQ floating or high) point-to-point applications. See the
Output Driver Characteristics chart for details.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS882V18/36B operates on a 2.5 V or 3.3 V power
supply. All input are 3.3 V and 2.5 V compatible. Separate
output power (V
DDQ
) pins are used to decouple output noise
from the internal circuits and are 3.3 V and 2.5 V compatible.
Paramter Synopsis
-333
-300
2.5
3.3
225
250
5.0
5.0
180
200
-250
2.5
4.0
195
220
5.5
5.5
155
175
-200
3.0
5.0
165
185
6.5
6.5
140
155
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Pipeline
3-1-1-1
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
2.5
3.0
245
275
4.5
4.5
195
220
Flow Through
2-1-1-1
Rev: 1.02 3/2005
1/36
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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