H11A1X, H11A2X, H11A3X, H11A4X, H11A5X
H11A1, H11A2, H11A3, H11A4, H11A5
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
UL recognised, File No. E91231
Package Code " GG "
'X' SPECIFICATIONAPPROVALS
VDE 0884 in 3 available lead form : -
- STD
- G form
1.2
2.54
7.0
6.0
Dimensions in mm
1
2
3
6
5
4
- SMD approved to CECC 00802
H11A1-4 Certified to EN60950 by :-
Nemko - Certificate No. P01102464
3.0
7.62
6.62
7.62
4.0
3.0
0.5
13°
Max
0.26
DESCRIPTION
The H11A series of optically coupled isolators
consist of infrared light emitting diode and NPN
silicon photo transistor in a standard 6 pin dual
in line plastic package.
FEATURES
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
All electrical parameters 100% tested
Custom electrical selections available
APPLICATIONS
DC motor controllers
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
0.5
3.35
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Collector-base Voltage BV
CBO
Emitter-collector Voltage BV
ECO
Collector Current
Power Dissipation
POWER DISSIPATION
30V
70V
6V
50mA
160mW
60mA
6V
105mW
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
200mW
Total Power Dissipation
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1UD England
Tel: (01429)863609 Fax : (01429) 863581 e-mail
sales@isocom.co.uk http://www.isocom.com
17/7/08
DB91041
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CEO
)
( note 2 )
Collector-base Breakdown (BV
CBO
)
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR)
H11A1
H11A2
H11A3
H11A4
H11A5
30
70
6
50
MIN TYP MAX UNITS
1.2
1.5
10
V
μA
V
V
V
nA
TEST CONDITION
I
F
= 10mA
V
R
= 6V
I
C
= 1mA
I
C
= 100μA
I
E
= 100μA
V
CE
= 10V
Coupled
50
20
20
10
30
0.4
%
%
%
%
%
V
V
RMS
V
PK
Ω
μs
μs
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
10mA I
F
, 0.5mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CC
= 5V , I
F
= 10mA
R
L
= 75Ω fig 1
Collector-emitter Saturation VoltageV
CE(SAT)
Input to Output Isolation Voltage V
ISO
5300
7500
Input-output Isolation Resistance R
ISO
5x10
10
Output Rise Time tr
2
Output Fall Time
tf
2
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
V
CC
Input
R
L
Output
Output
10%
t
r
t
f
t
on
t
off
10%
90%
90%
FIG 1
17/7/08
DB91041m-AAS/A3
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
1
2
V
CE
= 0.5V
T
A
= 25°C
5
10
20
50
150
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
80
70
Relative current transfer ratio
Forward current I
F
(mA)
Forward current I
F
(mA)
Relative Current Transfer Ratio
vs. Forward Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
2
5
V
CE
= 10V
T
A
= 25°C
60
50
40
30
20
10
-30
0
25
50
75
100
125
10
20
50
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
Forward current I
F
(mA)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
DB91041m-AAS/A3
I
F
= 10mA
V
CE
= 10V
Collector-emitter saturation voltage V
CE(SAT)
(V)
Relative current transfer ratio
I
F
= 10mA
I
C
= 0.5mA
1.0
0.5
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
17/7/08
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