H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
July 2006
H11AA814 Series, H11A617 Series, H11A817 Series
4-Pin Phototransistor Optocouplers
Features
■
AC input response (H11AA814 only)
■
Compatible to Pb-free IR reflow soldering
■
Compact 4-pin dual in-line package
■
Current transfer ratio in selected groups:
tm
Applications
H11AA814 Series
■
AC line monitor
■
Unknown polarity DC sensor
■
Telephone line interface
H11A617 and H11A817 Series
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
H11AA814: 20-300%
H11A817:
50-600%
H11AA814A: 50-150%
H11A817A: 80-160%
H11A617A: 40%-80%
H11A817B: 130-260%
H11A617B: 63%-125%
H11A817C: 200-400%
H11A617C: 100%-200% H11A817D: 300-600%
H11A617D: 160%-320%
■
C-UL, UL and VDE approved
■
High input-output isolation voltage of 5000Vrms
■
Minimum BV
CEO
of 70V guaranteed
Description
The H11AA814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The H11A617/817 Series consists of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 4-pin dual in-line package.
Package
Schematics
H11AA814
4
ANODE, CATHODE 1
4 COLLECTOR
1
CATHODE, ANODE 2
3 EMITTER
H11A617 & H11A817
ANODE 1
4 COLLECTOR
CATHODE 2
3 EMITTER
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C Unless otherwise specified.)
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
V
R
P
D
DETECTOR
V
CEO
V
ECO
I
C
P
D
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation (25°C ambient)
Derate above 90°C
All
814, 817 Series
617 Series
All
All
70
6
7
50
150
2.9
V
V
mA
mW
mW/°C
Continuous Forward Current
Reverse Voltage
LED Power Dissipation (25°C ambient)
No derating up to 100°C
814 Series
617, 817 Series
617 Series
817 Series
Parameter
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation (-55°C to 50°C)
Device*
All
All
All
All
Value
-55 to +150
-55 to +100
260 for 10 sec
200
±50
50
6
6
70
Units
°C
°C
°C
mW
mA
V
mW
All
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol Parameter
EMITTER
V
F
Input Forward Voltage I
F
= 60mA
I
F
= 20mA
I
F
= ±20mA
I
R
Reverse Leakage
Current
V
R
= 6.0V
V
R
= 5.0V
I
C
= 0.1 mA, I
F
= 0
I
E
= 10 µA, I
F
= 0
V
CE
= 10V, I
F
= 0
617 Series
817 Series
814 Series
617 Series
817 Series
ALL
814, 817 Series
617 Series
H11AA814/A, 817 Series,
H11A617C/D
H11A617A/B
70
6
7
100
10
10
1
100
50
nA
V
V
1.35
1.2
1.2
.001
1.65
1.5
1.5
10
µA
V
Test Conditions
Device
Min. Typ.*
Max.
Unit
DETECTOR
BV
CEO
BV
ECO
I
CEO
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Dark Current
*Typical values at T
A
=25°C
2
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
www.fairchildsemi.com
H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
Symbol DC Characteristic
CTR
Current Transfer
Ratio
Test Conditions
I
F
= ±1mA, V
CE
= 5V
(1)
I
F
= ±1mA, V
CE
= 5V
(1)
(I
F
= 10mA, V
CE
= 5V
(1)
Device
H11AA814
H11AA814A
H11A617A
H11A617B
H11A617C
H11A617D
Min Typ* Max Unit
20
50
40
63
100
160
50
80
130
200
300
13
22
34
56
0.2
0.4
0.2
4
3
18
18
µs
µs
300
150
80
125
200
320
600
160
260
400
600
%
%
%
%
%
%
%
%
%
%
%
%
%
%
%
V
(I
F
= 5mA, V
CE
= 5V
(1)
H11A817
H11A817A
H11A817B
H11A817C
H11A817D
I
F
= 1mA, V
CE
=
5V
(1)
H11A617A
H11A617B
H11A617C
H11A617D
V
CE (SAT)
Collector-Emitter
Saturation Voltage
I
C
= 1mA, I
F
= ±20mA
I
C
= 2.5mA, I
F
= 10mA
I
C
= 1mA, I
F
= 20mA
814 series
617 series
817 series
ALL
ALL
AC CHARACTERISTIC
t
r
t
f
Rise Time
Fall Time
I
C
= 2mA, V
CE
= 2 V, R
L
= 100
Ω
(2)
I
C
= 2mA, V
CE
= 2 V, R
L
= 100
Ω
(2)
Isolation Characteristics
Symbol
V
ISO
R
ISO
C
ISO
Characteristic
Input-Output Isolation Voltage
(note 3)
Isolation Resistance
Isolation Capacitance
Test Conditions
(f = 60Hz, t = 1 min)
(I
I-O
≤
2µA)
(V
I-O
= 500 VDC)
(V
I-O
= 0, f = 1 MHz)
Min.
5000
5x10
10
Typ.*
Max.
Units
Vac(rms)
10
11
0.6
1.0
Ω
pf
*Typical values at T
A
= 25°C.
Notes:
1. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
2. For test circuit setup and waveforms, refer to Figure 13.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
3
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
www.fairchildsemi.com
H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Typical Performance Curves
Fig. 1 Current Transfer Ratio
vs. Forward Current
200
160
VCE = 5V
Ta = 25°C
H11AA814
140
IF = 1mA
VCE = 5V
Fig. 2. Relative Current Transfer Ratio
vs. Ambient Temperature
CURRENT TRANSFER RATIO CTR ( %)
180
160
140
120
100
80
60
40
20
0
1
2
5
10
20
814
617
817
RELATIVE CURRENT TRANSFER
RATIO (%)
120
100
80
60
40
20
0
-60
IF = 5mA
VCE = 5V
H11AA617 & H11AA817
50
-40
-20
0
20
40
60
80
100
FORWARD CURRENT I
F
(mA)
AMBIENT TEMPERATURE T
A
(°C)
Fig. 4 Forward Current vs. Forward Voltage
100
Fig. 3 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
0.12
I
F
= 20 mA
I
C
= 1 mA
V
CE (SAT)
- COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
FORWARD CURRENT I
F
(mA)
0.10
T
A
= 100°C
75°C
0.08
10
50°C
0.06
25°C
0°C
-30°C
0.04
1
-55°C
0.02
0.00
-60
-40
-20
0
20
40
60
80
100
0.1
0.5
1.0
1.5
2.0
T
A
- AMBIENT TEMPERATURE (˚C)
Fig. 5 Collector Current vs.
Collector-Emitter Voltage (H11AA814)
50
FORWARD VOLTAGE V
F
(V)
Fig. 6 Collector Current vs. Collector-Emitter Voltage
(H11AA617 and H11AA817)
30
Ta = 25°C
I
COLLECTOR CURRENT I
C
(mA)
25
IF = 30mA
20mA
Ta = 25°C
COLLECTOR CURRENT I
C
(mA)
I
F
= 30 m A
40
Pc(MAX.)
20
20mA
30
Pc (Max)
15
10 mA
10
5m A
5
10mA
20
5mA
10
1mA
0
0
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
4
5
6
7
8
9
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
4
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
www.fairchildsemi.com
H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Typical Performance Curves
(Continued)
Fig. 7 Collector Dark Current vs Ambient Temperature
10000
500
V
CE
Fig. 8 Response Time vs. Load Resistance
V
CE
= 2V
200
100
I
C
= 2mA
Ta = 25°C
COLLECTOR DARK CURRENT I
CEO
(nA)
= 20V
1000
RESPONSE TIME (ms)
100
50
20
10
5
2
1
0.5
ts
tr
tf
td
10
1
0.1
0.01
-60
-40
-20
0
20
40
60
80
100
0.2
0.05
0.1
0.2
0.5
1
2
5
10
AMBIENT TEMPERATURE T
A
(°C)
LOAD RESISTANCE R
L
(kW)
Fig. 9. Frequency Response (H11AA814)
V
CE
= 2V
I
C
= 2mA
Ta = 25°C
0
Fig. 10. Frequency Response (H11AA617 and H11AA817)
V
CE
= 2V
I
C
= 2mA
0
Ta = 25°C
VOLTAGE GAIN AV (dB)
VOLTAGE GAIN AV (dB)
10
RL=10kΩ
1kΩ
100Ω
R
L
= 10kΩ
-10
1kΩ
100Ω
20
-20
0.2
0.5
15
2
10
100
1000
0.5
1
2
5
10
20
50 100
500
FREQUENCY f (kHz)
Fig. 11. LED Power Dissipation vs. Ambient Temperature
FREQUENCY f (kHz)
Fig. 12. Collector Power Dissipation
vs. Ambient Temperature
COLLECTOR POWER DISSIPATION P
C
(mW)
200
100
LED POWER DISSIPATION P
LED
(mW)
80
150
60
100
40
50
20
0
-55
-40
-20
0
20
40
60
80
100
120
0
-55
-40
-20
0
20
40
60
80
100
120
AMBIENT TEMPERATURE T
A
(°C)
AMBIENT TEMPERATURE T
A
(°C)
5
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
www.fairchildsemi.com
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