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HBAT54S

产品描述Silicon Schottky Barrier Double Diodes
产品类别分立半导体    二极管   
文件大小33KB,共4页
制造商HSMC
官网地址http://www.hsmc.com.tw/
下载文档 详细参数 选型对比 全文预览

HBAT54S概述

Silicon Schottky Barrier Double Diodes

HBAT54S规格参数

参数名称属性值
厂商名称HSMC
Reach Compliance Codeunknow
ECCN代码EAR99
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.24 V
最大非重复峰值正向电流0.6 A
最高工作温度125 °C
最大重复峰值反向电压30 V
最大反向恢复时间0.005 µs
表面贴装YES
技术SCHOTTKY

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下载PDF文档
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2004.08.26
Page No. : 1/4
HBAT54 Series
Description
Silicon Schottky Barrier Double Diodes
HBAT54: Single Diode, also available as double diodes.
HBAT54A: Common Anode.
HBAT54C: Common Cathode.
HBAT54S: Series Connected.
Diagram:
3
3
SOT-23
1
2
1
2
HBAT54
3
HBAT54A
3
Features
These diodes feature very low turn-on voltage and fast switching. There is a PN
junction guard ring against excessive voltage such as electronics attic discharges
protects these devices.
1
2
1
2
HBAT54C
HBAT54S
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ............................................................................................................................. -65~+125
°C
Junction Temperature .................................................................................................................................... +125
°C
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ............................................................................................................... 230 mW
Maximum Voltages and Currents (T
A
=25°C)
Repetitive Peak Reverse Voltage ....................................................................................................................... 30 V
Forward Continuous Current ......................................................................................................................... 200 mA
Repetitive Peak Forward Current ................................................................................................................. 300 mA
Surge Forward Current (tp<1s)...................................................................................................................... 600 mA
Electrical Characteristics
(T
A
=25°C)
Characteristic
Reverse breakdown Voltage
Symbol
V
(BR)
V
F(1)
V
F(2)
Forward Voltage
V
F(3)
V
F(4)
V
F(5)
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
C
T
T
rr
I
R
=10uA
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
V
R
=25V
V
R
=1V, f=1MHz
I
F
=I
R
=10mA, R
L
=100Ω,
measured at I
R
=1mA
Condition
Min.
30
-
-
-
-
-
-
-
-
Max.
-
240
320
400
500
1000
2.0
10
5
Unit
V
mV
mV
mV
mV
mV
uA
pF
nS
HBAT54, HBAT54A, HBAT54C, HBAT54S
HSMC Product Specification

HBAT54S相似产品对比

HBAT54S HBAT54 HBAT54A HBAT54C HBAT54X
描述 Silicon Schottky Barrier Double Diodes Silicon Schottky Barrier Double Diodes Silicon Schottky Barrier Double Diodes Silicon Schottky Barrier Double Diodes Silicon Schottky Barrier Double Diodes
厂商名称 HSMC HSMC HSMC HSMC -
Reach Compliance Code unknow unknow unknow unknow -
ECCN代码 EAR99 EAR99 EAR99 EAR99 -
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
最大正向电压 (VF) 0.24 V 0.24 V 0.24 V 0.24 V -
最大非重复峰值正向电流 0.6 A 0.6 A 0.6 A 0.6 A -
最高工作温度 125 °C 125 °C 125 °C 125 °C -
最大重复峰值反向电压 30 V 30 V 30 V 30 V -
最大反向恢复时间 0.005 µs 0.005 µs 0.005 µs 0.005 µs -
表面贴装 YES YES YES YES -
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY -

 
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