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HBL4J

产品描述TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
文件大小89KB,共2页
制造商DCCOM [ DC COMPONENTS ]
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HBL4J概述

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

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DC COMPONENTS CO., LTD.
R
HBL4A
THRU
HBL4M
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE - 50 to 1000 Volts
CURRENT - 4.0 Amperes
FEATURES
* Ideal for printed circuit board
* Surge overload rating: 120 Amperes peak
HBL
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: MIL-STD-202E, Method 208 guaranteed
Polarity: Symbols molded or marked on body
Mounting position: Any
.125(3.2)
o
45
Chamfer
.81(20.6)
.77(19.6)
.187(4.7)
.148(3.8)
.44(11.2)
.42(10.7)
AC
.095(2.4)
.065(1.6)
.68(17.3)
.62(15.7)
.080(2.0)
.065(1.7)
.045(1.1)
.035(0.9)
.060(1.5)
.045(1.1)
.020(0.5)
.015(0.4)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.209(5.3)
SPACING
.189(4.8)
Dimensions in inches and (millimeters)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at T
A
= 50 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage Drop per element at 3.0A DC
Maximum DC Reverse Current at Rated
DC Blocking Voltage per element
I
2
t Rating for Fusing (t*8.3ms)
Typical Junction Capacitance ( Note1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
NOTES : 1.Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
@T
A
= 25 C
@T
A
= 100
o
C
o
o
HBL4A
50
35
50
HBL4B
100
70
100
HBL4D
200
140
200
HBL4G
400
280
400
4.0
120
1.0
10
500
HBL4J
600
420
600
HBL4K
800
560
800
HBL4M
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
µAmps
A
2
Sec
pF
0
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
I
R
I
2
t
C
J
J A
T
J
T
STG
93
40
19
-55 to +150
-55 to +150
C/W
0
0
C
C
2.Thermal Resistance from Junction to Case per element Unit mounted on 300x300x1.6mm Aluminum plate heat-sink.

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描述 TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

 
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