®
HCTS138MS
Data Sheet
September 12, 2005
FN2462.3
Radiation Hardened Inverting
3-to-8 Line Decoder/Demultiplexer
The Intersil HCTS138MS is a Radiation Hardened 3-to-8 line
Decoder/Demultiplexer. The outputs are active in the low
state. Two active low and one active high enables (E1, E2,
E3) are provided. If the device is enabled, the binary inputs
(A0, A1, A2) determine which one of the eight normally high
outputs will go to a low logic level.
The HCTS138MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS138MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-
Day (Typ)
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16
TOP VIEW
A0
A1
A2
E1
E2
E3
Y7
GND
1
2
3
4
5
6
7
8
16 VCC
15 Y0
14 Y1
13 Y2
12 Y3
11 Y4
10 Y5
9 Y6
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii
≤
5µA at VOL, VOH
Ordering Information
PART NUMBER
HCTS138DMSR
HCTS138KMSR
HCTS138HMSR
TEMP
RANGE
-55
o
C to
+125
o
C
-55
o
C to
+125
o
C
+25
o
C
SCREENING
LEVEL
PACKAGE
Intersil Class S 16 Lead SBDIP
Equivalent
Intersil Class S 16 Lead Ceramic
Equivalent
Flatpack
Die
Die
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16
TOP VIEW
A0
A1
A2
E1
E2
E3
Y7
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
Y0
Y1
Y2
Y3
Y4
Y5
Y6
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 1995, 1999, 2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
HCTS138MS
Functional Diagram
1
A0
15
Y0
14
2
A1
13
Y2
3
A2
11
Y4
4
E1
5
E2
6
E3
10
Y5
9
Y6
7
Y7
12
Y3
Y1
TRUTH TABLE
INPUTS
ENABLE
E3
X
L
X
H
H
H
H
H
H
H
H
E2
X
X
H
L
L
L
L
L
L
L
L
E1
H
X
X
L
L
L
L
L
L
L
L
A2
X
X
X
L
L
L
L
H
H
H
H
A1
X
X
X
L
L
H
H
L
L
H
H
A0
X
X
X
L
H
L
H
L
H
L
H
Y0
H
H
H
L
H
H
H
H
H
H
H
Y1
H
H
H
H
L
H
H
H
H
H
H
Y2
H
H
H
H
H
L
H
H
H
H
H
OUTPUTS
Y3
H
H
H
H
H
H
L
H
H
H
H
Y4
H
H
H
H
H
H
H
L
H
H
H
Y5
H
H
H
H
H
H
H
H
L
H
H
Y6
H
H
H
H
H
H
H
H
H
L
H
Y7
H
H
H
H
H
H
H
H
H
H
L
H = High Level, L = Low Level, X = Don’t Care
2
FN2462.3
September 12, 2005
Specifications HCTS138MS
Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . . ±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . . ±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . .+265
o
C
Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . . . .+175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
SBDIP Package . . . . . . . . . . . . . . . . . . . .
73
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 114
o
C/W 29
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . .0.44W
If device power exceeds package dissipation capability, provide
heat sinking or derate linearly at the following rate:
SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent dam-
age. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electri-
cal Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . . 500ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL) . . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGRO
UPS
1
2, 3
Output Current (Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
2, 3
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
7.2
6.0
-7.2
-6.0
-
MAX
40
750
-
-
-
-
0.1
UNITS
µA
µA
mA
mA
mA
mA
V
PARAMETER
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
-
0.1
V
1, 2, 3
VCC
-0.1
VCC
-0.1
-
-
-
-
V
1, 2, 3
-
V
1
2, 3
±0.5
±5.0
-
µA
µA
-
Noise Immunity
Functional Test
NOTES:
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 2)
7, 8A, 8B
1. All voltages reference to device GND.
2. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
3
FN2462.3
September 12, 2005
Specifications HCTS138MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGRO
UPS
9
10, 11
TPHL
VCC = 4.5V
9
10, 11
Enable to Output
TPLH
VCC = 4.5V
9
10, 11
TPHL
VCC = 4.5V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
2
2
MAX
25
30
28
39
26
31
26
34
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
Address to Output
SYMBOL
TPLH
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, f = 1MHz
NOTES
1
1
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
1
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
1
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested.
These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
-
-
MAX
89
102
10
10
15
22
UNITS
pF
pF
pF
pF
ns
ns
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
PARAMETER
Quiescent Current
Output Current (Sink)
SYMBOL
ICC
IOL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
MIN
-
6.0
MAX
0.75
-
UNITS
mA
mA
Output Current (Source)
IOH
-6.0
-
mA
4
FN2462.3
September 12, 2005
Specifications HCTS138MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
200K RAD
LIMITS
PARAMETER
Output Voltage Low
SYMBOL
VOL
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V at 200K RAD, IOL = 50µA
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V at 200K RAD, IOH = -50µA
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 3)
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
MAX
0.1
UNITS
V
Output Voltage High
VOH
VCC
-0.1
-
-
-
V
Input Leakage Current
Noise Immunity
Functional Test
Address to Output
IIN
FN
±5
-
µA
-
TPLH
TPHL
2
2
2
2
30
39
31
34
ns
ns
ns
ns
Enable to Output
TPLH
TPHL
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
ICC
IOL/IOH
GROUP B
SUBGROUP
5
5
DELTA LIMIT
12µA
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
Initial Test (Preburn-In)
Interim Test
I
(Postburn-In)
Interim Test
II
(Postburn-In)
PDA
Interim Test
III
(Postburn-In)
PDA
Final Test
Group A (Note 1)
Group B
Subgroup B-5
Subgroup B-6
Group D
NOTE:
1. Alternate group A inspection in accordance with method 5005 of MIL-STD-883 may be exercised.
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
Sample/5005
Sample/5005
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
1, 7, 9
Subgroups 1, 2, 3, 9, 10, 11
ICC, IOL/H
READ AND RECORD
ICC, IOL/H
ICC, IOL/H
ICC, IOL/H
5
FN2462.3
September 12, 2005
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