MITSUBISHI Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET
FY7BFH-02E
FY7BFH-02E
HIGH-SPEED SWITCHING USE
HIGH-SPEED SWITCHING USE
FY7BFH-02E
OUTLINE DRAWING
➇
➄
Dimensions in mm
6.4
4.4
➀
3.0
➃
1.1
0.275
0.65
➀
➁
➆➇
➄➅
G
2.5V DRIVE
G
V
DSS ..................................................................................
20V
G
r
DS (ON) (MAX) ..............................................................
30mΩ
G
I
D ...........................................................................................
7A
➃
➂
➀ ➂
SOURCE
➁ ➃
GATE
➄ ➅ ➆ ➇
DRAIN
TSSOP8
APPLICATION
Li - ion battery, etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
20
±10
7
49
7
1.8
7.2
1.6
–55 ~ +150
–55 ~ +150
0.035
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Sep. 2001
L = 10µH
Typical value
MITSUBISHI Nch POWER MOSFET
FY7BFH-02E
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-a)
t
rr
Parameter
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Test conditions
I
D
= 1mA, V
GS
= 0V
I
G
=
±100µA,
V
DS
= 0V
V
GS
=
±10V,
V
DS
= 0V
V
DS
= 20V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 7A, V
GS
= 4V
I
D
= 3.5A, V
GS
= 2.5V
I
D
= 7A, V
GS
= 4V
I
D
= 7A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
Limits
Min.
20
±10
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
0.9
23
30
0.161
16
1400
520
400
30
100
190
190
0.85
—
50
Max.
—
—
±10
0.1
1.3
30
40
0.210
—
—
—
—
—
—
—
—
1.1
78.1
—
Unit
V
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
V
DD
= 10V, I
D
= 3.5A, V
GS
= 4V, R
GEN
= R
GS
= 50Ω
I
S
= 1.8A, V
GS
= 0V
Channel to ambient
I
S
= 1.8A, dis/dt = –50A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
7
5
3
2
tw =
10µs
100µs
1.6
10
1
7
5
3
2
1ms
1.2
0.8
10
0
7
5
3
2
10ms
0.4
100ms
T
C
= 25°C
Single Pulse
DC
2 3
5 7
10
0
2 3
5 7
10
1
2 3
5
0
10
–1
0
50
100
150
200
7
CASE TEMPERATURE T
C
(°C)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
V
GS
= 5V
4V
3V
2.5V
OUTPUT CHARACTERISTICS
(TYPICAL)
10
V
GS
= 5V
4V
3V
2.5V
2V
T
C
= 25°C
Pulse Test
1.5V
2V
DRAIN CURRENT I
D
(A)
16
DRAIN CURRENT I
D
(A)
8
T
C
= 25°C
Pulse Test
12
1.5V
6
8
4
P
D
= 1.6W
4
P
D
= 1.6W
2
0
0
0.2
0.4
0.6
0.8
1.0
0
0
0.1
0.2
0.3
0.4
0.5
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FY7BFH-02E
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
1.0
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
T
C
= 25°C
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
T
C
= 25°C
Pulse Test
0.8
80
0.6
60
0.4
I
D
= 14A
40
V
GS
= 2.5V
0.2
7A
3A
20
4V
0
0
1.0
2.0
3.0
4.0
5.0
0
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
DRAIN CURRENT I
D
(A)
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
10
2
7
5
3
2
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
16
T
C
= 25°C
75°C
125°C
10
1
7
5
3
2
12
8
10
0
7
5
3
2
V
DS
= 10V
Pulse Test
5 7
10
0
2
3
5 7
10
1
2
3
5
4
0
T
C
= 25°C
V
DS
= 10V
Pulse Test
0
1.0
2.0
3.0
4.0
5.0
10
–1
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10
4
7
5
3
2
5
3
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS
(TYPICAL)
t
d(off)
t
f
t
r
10
3
7
5
3
2
SWITCHING TIME (ns)
2
CAPACITANCE
Ciss, Coss, Crss (pF)
10
2
7
5
3
2
t
d(on)
10
2
7
5
3
2
T
C
h = 25°C
f = 1MH
Z
V
GS
= 0V
10
1
–
1
10
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
DRAIN-SOURCE VOLTAGE V
DS
(V)
10
1
7
5
T
C
h = 25°C
V
DD
= 10V
V
GS
= 4V
R
GEN
= R
GS
= 50Ω
2
3
5 7
10
0
2
3
5 7
10
1
10
–1
DRAIN CURRENT I
D
(A)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FY7BFH-02E
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
V
GS
= 0V
Pulse Test
GATE-SOURCE VOLTAGE V
GS
(V)
5.0
T
C
h = 25°C
I
D
= 7A
SOURCE CURRENT I
S
(A)
4.0
V
DS
= 7V
10V
15V
16
T
C
= 125°C
75°C
25°C
3.0
12
2.0
8
1.0
4
0
0
8
16
24
32
40
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
V
GS
= 4V
7 I
D
= 7A
5 Pulse Test
3
2
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
2.0
V
DS
= 10V
I
D
= 1mA
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
1.6
1.2
10
0
7
5
3
2
0.8
0.4
10
–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch–c)
(°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= 1mA
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
2
7
5
3
2
7
5
0.5
0.2
D = 1.0
1.2
10
1
0.1
0.05
3 0.02
2
1.0
0.8
10
0
7
5
3
2
0.01
Single Pulse
P
DM
tw
T
D
=
tw
T
0.6
0.4
–50
0
50
100
150
10
–1 –4
10
2 3 5 7
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
PULSE WIDTH t
w
(s)
CHANNEL TEMPERATURE Tch (°C)
Sep. 2001
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