Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
SOT-23 Formed SMD Package
CMBTA42
CMBTA43
SILICON EPITAXIAL TRANSISTORS
N–P–N transistors
Marking
CMBTA42 = 1D
CMBTA43 = 1E
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to T
amb
= 25 °C
Junction temperature
D.C. current gain
I
C
= 10 mA; V
CE
= 10 V
Transition frequency at f = 35 MHz
I
C
= 10 mA; V
CE
= 20 V
Feedback capacitance at f = 1 MHz
I
C
= 0; V
CE
= 20 V
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
h
FE
f
T
C
re
CMBT A42
max. 300
max. 300
max.
max.
max.
max.
min.
min.
max.
3
A43
200 V
200 V
V
mA
mW
°C
6
500
250
150
40
50
MHz
4
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
CMBTA42
CMBTA43
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
V
CBO
Collector–emitter voltage (open base)
V
CEO
Emitter–base voltage (open collector)
V
EBO
Collector current (d.c.)
I
C
Total power dissipation up to T
amb
= 25 °C P
tot
Storage temperature
T
stg
Junction temperature
T
j
THERMAL CHARACTERISTICS
T
j
= P (R
th j–t
+ R
th t–s
+ R
th s–a
) + T
amb
Thermal resistance
from junction to ambient
max. 300
max. 300
max.
max.
max.
–55
max.
200 V
200 V
6
V
500
mA
250
mW
to +150
°C
150
°C
R
th j–a
=
500
K/W
CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
Collector–emitter breakdown voltage
CMBTA42
V
(BR)CEO
min. 300
I
C
= 1 mA; I
B
= 0
Collector–base breakdown voltage
V
(BR)CBO
min. 300
I
C
= 100
µA;
I
E
= 0
Emitter–base breakdown voltage
V
(BR)EBO
min.
I
E
= 100
µA;
I
C
= 0
Collector cut–off current
I
CBO
max. 0.1
I
E
= 0; V
CB
= 200 V
I
CBO
max. –
I
E
= 0; V
CB
= 160 V
Emitter cut–off current
I
EBO
max. 0.1
I
C
= 0; V
BE
= 6 V
I
EBO
max. –
I
C
= 0; V
BE
= 4 V
Feedback capacitance at f = 1 MHz
C
re
max. 3
I
E
= 0; V
CB
= 20 V
Saturation voltages
V
CEsat
max.
I
C
= 20 mA; I
B
= 2 mA
V
BEsat
max.
I
C
= 20 mA; I
B
= 2 mA
D.C. current gain
h
FE
min.
I
C
= 1 mA; V
CE
= 10 V
h
FE
min.
I
C
= 10 mA; V
CE
= 10 V
h
FE
min.
I
C
= 30 mA; V
CE
= 10 V
Transition frequency at f = 35 MHz
f
T
min.
I
C
= 10 mA; V
CE
= 20 V
A43
200 V
200 V
6
V
–
µA
0.1
µA
–
µA
0.1
µA
4
0.5
0.9
25
40
40
50
MHz
pF
V
V
Continental Device India Limited
Data Sheet
Page 2 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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