MC100EL1648
5 V ECL Voltage Controlled
Oscillator Amplifier
Description
The MC100EL1648 is a voltage controlled oscillator amplifier that
requires an external parallel tank circuit consisting of the inductor (L)
and capacitor (C). A varactor diode may be incorporated into the tank
circuit to provide a voltage variable input for the oscillator (VCO).
This device may also be used in many other applications requiring a
fixed frequency clock.
The MC100EL1648 is ideal in applications requiring a local
oscillator, systems that include electronic test equipment, and digital
high−speed telecommunications.
The MC100EL1648 is based on the VCO circuit topology of the
MC1648. The MC100EL1648 uses advanced bipolar process
technology which results in a design which can operate at an extended
frequency range.
The ECL output circuitry of the MC100EL1648 is not a traditional
open emitter output structure and instead has an on−chip termination
emitter resistor, R
E
, with a nominal value of 510
W.
This facilitates
direct ac−coupling of the output signal into a transmission line.
Because of this output configuration, an external pull−down resistor is
not required to provide the output with a dc current path. This output is
intended to drive one ECL load (3.0 pF). If the user needs to fanout the
signal, an ECL buffer such as the EL16 (EL11, EL14) type Line
Receiver/Driver should be used.
Features
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MARKING
DIAGRAMS*
8
8
1
SOIC−8
D SUFFIX
CASE 751
1
K1648
ALYW
G
8
8
1
TSSOP−8
DT SUFFIX
CASE 948R
1
14
SOEIAJ−14
M SUFFIX
CASE 965
1
KEL1648
ALYWG
1648
ALYWG
G
1
NOTE:
The MC100EL1648 is NOT useable as a crystal oscillator.
V
CC
V
CC
EXTERNAL
TANK
CIRCUIT
BIAS POINT
TANK
OUTPUT
A
L
Y
W
M
G or
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
*For additional marking information, refer to
Application Note AND8002/D.
V
EE
V
EE
AGC
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
Figure 1. Logic Diagram
©
Semiconductor Components Industries, LLC, 2008
August, 2008
−
Rev. 8
1
Publication Order Number:
MC100EL1648/D
6L M
G
G
4
•
•
•
•
Typical Operating Frequency Up to 1100 MHz
Low−Power 19 mA at 5.0 Vdc Power Supply
PECL Mode Operating Range: V
CC
= 4.2 V to 5.5 V with V
EE
= 0 V
NECL Mode Operating Range: V
CC
= 0 V with V
EE
=
−4.2
V
to
−5.5
V
•
Input Capacitance = 6.0 pF (TYP)
•
Pb−Free Packages are Available
14
1
DFN8
MN SUFFIX
CASE 506AA
MC100EL1648
BIAS
8
V
EE
7
V
EE
6
AGC
5
V
CC
14
NC TANK NC BIAS NC
13
12
11
10
9
V
EE
8
1
2
3
V
CC
4
OUT
1
V
CC
2
NC
3
OUT
4
NC
5
AGC
6
NC
7
V
EE
TANK V
CC
8 Lead
14 Lead
Warning: All V
CC
and V
EE
pins must be externally connected
to Power Supply to guarantee proper operation.
Figure 2. Pinout Assignments
Table 1. PIN DESCRIPTION
Pin No.
8 Lead
1
14 Lead
12
Symbol
TANK
V
CC
OSC Input Voltage
Positive Supply
ECL Output
Description
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á
Á
2, 3
4
5
1, 14
3
5
OUT
AGC
V
EE
NC
EP
Automatic Gain Control Input
Negative Output
6, 7
8
7, 8
10
BIAS
OSC Input Reference Voltage
No Connect
2, 4, 7, 9, 11, 13
Thermal
Exposed
Pad
(DFN8 only) Thermal exposed pad must be connected to a sufficient thermal
conduit. Electrically connect to the most negative supply (GND) or leave uncon-
nected, floating open.
Table 2. ATTRIBUTES
Characteristic
Value
N/A
N/A
Internal Input Pulldown Resistor
Internal Input Pullup Resistor
ESD Protection
Human Body Model
Machine Model
Charged Device Model
Pb Pkg
Level 1
Level 1
Level 3
Level 1
> 1 kV
> 100 V
> 1 kV
Pb−Free Pkg
Level 1
Level 3
Level 3
Level 1
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
SOIC−8
TSSOP−8
SOEIAJ−14
DFN8
Flammability Rating
Transistor Count
Meets or Exceeds JEDEC Standard EIA/JESD78 IC Latchup Test
Oxygen Index: 23 to 34
UL 94 V−0 @ 0.125 in
11
1. For additional Moisture Sensitivity information, refer to Application Note AND8003/D.
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2
MC100EL1648
Table 3. MAXIMUM RATINGS
Symbol
V
CC
V
EE
V
I
I
out
T
A
T
stg
q
JA
q
JC
q
JA
q
JC
q
JA
q
JC
q
JA
T
sol
q
JC
Parameter
Power Supply PECL Mode
Power Supply NECL Mode
PECL Mode Input Voltage
NECL Mode Input Voltage
Output Current
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Wave Solder
Pb
Pb−Free
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
<2 to 3 sec @ 248°C
<2 to 3 sec @ 260°C
(Note 1)
DFN8
SOIC−8
SOIC−8
SOIC−8
TSSOP−8
TSSOP−8
TSSOP−8
SOIC−14
SOIC−14
SOIC−14
DFN8
DFN8
Condition 1
V
EE
= 0 V
V
CC
= 0 V
V
EE
= 0 V
V
CC
= 0 V
Continuous
Surge
V
I
V
CC
V
I
V
EE
Condition 2
Rating
7 to 0
−7
to 0
6 to 0
−6
to 0
50
100
−40
to +85
−65
to +150
190
130
41 to 44
185
140
41 to 44
150
110
41 to 44
129
84
265
265
35 to 40
Unit
V
V
V
V
mA
mA
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C/W
Thermal Resistance (Junction−to−Case)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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MC100EL1648
Table 4. PECL DC CHARACTERISTICS
V
CC
= 5.0 V; V
EE
= 0.0 V +0.8 /
−0.5
V (Note 2)
−40°C
Symbol
I
EE
V
OH
V
OL
AGC
V
BIAS
V
IL
V
IH
I
L
Input Current
−5.0
Characteristic
Power Supply Current
Output HIGH Voltage (Note 3)
Output LOW Voltage (Note 3)
Automatic Gain Control Input
Bias Voltage (Note 4)
Min
13
3950
3040
1690
1650
1.5
2.0
−5.0
Typ
19
4170
3410
Max
25
4610
3600
1980
1800
Min
13
3950
3040
1690
1650
1.35
1.85
−5.0
25°C
Typ
19
4170
3410
Max
25
4610
3600
1980
1800
Min
13
3950
3040
1690
1650
1.2
1.7
85°C
Typ
19
4170
3410
Max
25
4610
3600
1980
1800
Unit
mA
mV
mV
mV
mV
V
V
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Output parameters vary 1:1 with V
CC
.
3. 1.0 MW impedance.
4. This measurement guarantees the dc potential at the bias point for purposes of incorporating a varactor tuning diode at this point.
Table 5. NECL DC CHARACTERISTICS
V
CC
= 0.0 V; V
EE
=
−5.0
V +0.8 /
−0.5
V (Note 5)
−40°C
Symbol
I
EE
V
OH
V
OL
AGC
V
BIAS
V
IL
V
IH
I
L
Input Current
−5.0
Characteristic
Power Supply Current
Output HIGH Voltage (Note 6)
Output LOW Voltage (Note 6)
Automatic Gain Control Input
Bias Voltage (Note 7)
Min
13
−1050
−1960
−3310
−3350
−3.5
−3.0
−5.0
Typ
19
−830
−1590
Max
25
−399
−1400
−3020
−3200
Min
13
−1050
−1960
−3310
−3350
−3.65
−3.15
−5.0
25°C
Typ
19
−830
−1590
Max
25
−399
−1400
−3020
−3200
Min
13
−1050
−1960
−3310
−3350
−3.8
−3.3
85°C
Typ
19
−830
−1590
Max
25
−399
−1400
−3020
−3200
Unit
mA
mV
mV
mV
mV
V
V
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
5. Output parameters vary 1:1 with V
CC
.
6. 1.0 MW impedance.
7. This measurement guarantees the dc potential at the bias point for purposes of incorporating a varactor tuning diode at this point.
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MC100EL1648
GENERIC TEST CIRCUITS: Bypass to Supply Opposite GND
V
CC
0.1
mF
8 (10)
V
IN
C
1 KW
*
Tank #1
V
EE
100
mF
0.01
mF
L
1 (12)
6 (7) 7 (8)
5 (5)
3 (1)
0.1
mF
2 (14)
4 (3)
**
F
OUT
L = Micro Metal torroid #T20−22, 8 turns #30
Enameled Copper wire (@ 40 nH)
C = MMBV609
* Use high impedance probe (>1.0 MW must be
used).
** The 1200
W
resistor and the scope termination
impedance constitute a 25:1 attenuator probe.
Coax shall be CT−070−50 or equivalent.
8 pin (14 pin) Lead Package
Tank Circuit Option #1, Varactor Diode
V
CC
0.1
mF
0.1
mF
0.1
mF
8 (10)
0.1mF
Test Point
L
C
1 (12)
6 (7) 7 (8)
5 (5)
3 (1)
0.1
mF
2 (14)
4 (3)
F
OUT
L = Micro Metal torroid #T20−22, 8 turns #30
Enameled Copper wire (@ 40 nH)
C = 3.0−35pF Variable Capacitance (@ 10 pF)
Note 1 Capacitor for tank may be variable type.
(See Tank Circuit #3.)
Note 2 Use high impedance probe (> 1 MW ).
8 pin (14 pin) Lead Package
Tank #2
V
EE
100
mF
0.01
mF
0.1
mF
0.1
mF
Tank Circuit Option #2, Fixed LC
Figure 3. Typical Test Circuit with Alternate Tank Circuits
V
P-P
t
a
t
b
50%
PRF = 1.0MHz
t
Duty Cycle (Vdc) - a
tb
Figure 4. Output Waveform
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