MWI 75-12 A5
IGBT Modules
Sixpack
I
C25
= 90 A
= 1200 V
V
CES
V
CE(sat) typ.
= 2.2 V
Short Circuit SOA Capability
Square RBSOA
W1
I 10
K10
A10
B10
R10
S10
F3
K3
P3
E10
F10
A1
M10
N10
V10
W10
E 72873
Preliminary data
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C80
I
CM
t
SC
(SCSOA)
RBSOA
P
tot
T
J
T
stg
V
ISOL
Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 20 kΩ
Continuous
Transient
T
C
= 25°C
T
C
= 80°C
T
C
= 80°C, t
P
= 1 ms
V
GE
= ±15 V, V
CE
= V
CES
, T
J
= 125°C
R
G
= 22
Ω,
non repetitive
V
GE
= ±15 V, T
J
= 125°C, R
G
= 22
Ω
Clamped inductive load, L = 100
µH
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
90
60
120
10
I
CM
= 100
V
CEK
< V
CES
370
150
-40 ... +150
V
V
V
V
A
A
A
µs
A
W
°C
°C
V~
V~
Nm
lb.in.
mm
mm
m/s
2
g
oz.
Features
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with DCB ceramic base plate
isolation voltage 4800 V
UL registered E72873
q
q
q
q
q
q
q
q
q
q
q
q
q
Advantages
q
q
q
space and weight savings
reduced protection circuits
package designed for wave soldering
50/60 Hz, RMS
t = 1 min
I
ISOL
≤
1 mA
t=1s
Insulating material: Al
2
O
3
Mounting torque (M5)
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Typical
4000
4800
2.0 - 2.5
18 - 22
9
9
50
80
2.8
Typical Applications
q
q
q
M
d
d
S
d
A
a
Weight
AC motor control
AC servo and robot drives
power supplies
Data according to a single IGBT/FRED unless otherwise stated.
©1998 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
842
MWI 75-12 A5
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ. max.
1200
4.5
T
J
= 25°C
T
J
= 125°C
6
6.5
V
V
Dimensions in mm (1 mm = 0.0394")
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
R
thJC
R
thJS
V
GE
= 0 V
I
C
= 2 mA, V
CE
= V
GE
V
CE
= V
CES
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 50 A, V
GE
= 15 V
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
4 mA
mA
±200
nA
V
pF
pF
pF
ns
ns
ns
ns
mJ
mJ
0.33 K/W
K/W
2.2
3300
500
220
100
2.7
Inductive load, T
J
= 125°C
°
I
C
= 50 A, V
GE
= ±15 V
V
CE
= 600 V, R
G
= 22
Ω
70
500
70
7.6
5.6
with heatsink compound
0.66
Reverse Diode (FRED)
Characteristic Values
min.
typ.
2.3
1.8
max.
2.5
2.1
100
60
40
200
1.32
V
V
A
A
A
ns
0.66 K/W
K/W
Equivalent Circuits for Simulation
Conduction
V
F
I
F
I
RM
t
rr
R
thJC
R
thJS
I
F
= 50 A, V
GE
= 0 V
I
F
= 50 A, V
GE
= 0 V, T
J
= 125°C
T
C
= 25°C
T
C
= 80°C
I
F
= 50 A, V
GE
= 0 V, -di
F
/dt = 400 A/µs
T
J
= 125°C, V
R
= 600 V
with heatsink compound
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.5 V; R
0
= 20.7 m
Ω
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.3 V; R
0
= 11.3 m
Ω
Thermal Response
IGBT (typ.)
C
th1
= 0.13 J/K; R
th1
= 0.323 K/W
C
th2
= 0.32 J/K; R
th2
= 0.008 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.10 J/K; R
th1
= 0.645 K/W
C
th2
= 0.18 J/K; R
th2
= 0.013 K/W
©1998 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
842
MWI 75-12 A5
120
T
J
= 25°C
A
100
I
C
V
GE
=17V
15V
13V
11V
120
A
T
J
= 125°C
100
I
C
80
V
GE
=17V
15V
13V
11V
80
60
40
9V
60
40
20
0
0.0
9V
20
0
0.0
0.5
1.0
1.5
2.0
2.5
V
CE
3.0
V
0.5
1.0
1.5
2.0
2.5 3.0
V
CE
3.5
V
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
120
V
CE
= 20V
A
T
J
= 25°C
100
I
C
180
T
J
= 125°C
A
150
I
F
120
90
60
30
0
T
J
= 25°C
80
60
40
20
0
5
6
7
8
9
10
V
GE
11
V
0
1
2
V
F
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
20
V
V
GE
15
120
V
CE
= 600V
I
C
= 50A
300
ns
t
rr
A
I
RM
t
rr
80
200
10
40
5
T
J
= 125°C
V
R
= 600V
I
F
= 50A
I
RM
100
75-12
0
0
50
100
150
200
Q
G
0
250
nC
0
200
400
600
800
A/µs
-di/dt
0
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
©1998 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
842
MWI 75-12 A5
24
mJ
E
on
120
ns
90
t
d(on)
t
60
t
r
V
CE
= 600V
V
GE
= ±15V
R
G
= 22Ω
T
J
= 125°C
12
mJ
10
E
off
600
E
off
ns
500
t
d(off)
400 t
300
200
100
0
0
20
40
60
80
I
C
100 A
18
8
6
4
V
CE
= 600V
V
GE
= ±15V
R
G
= 22Ω
T
J
= 125°C
12
6
E
on
30
2
0
t
f
0
0
20
40
60
I
C
0
80
100
A
Fig. 7 Typ. turn on energy and switching
times versus collector current
20
mJ
E
on
240
t
d(on)
E
on
ns
180
t
E
off
Fig. 8 Typ. turn off energy and switching
times versus collector current
10
mJ
1500
ns
1200
t
900
600
300
t
f
0
15
V
CE
= 600V
V
GE
= ±15V
I
C
= 50A
T
J
= 125°C
8
6
V
CE
= 600V
V
GE
= ±15V
I
C
= 50A
T
J
= 125°C
t
d(off)
E
off
10
t
r
120
4
60
5
2
0
0
0
0 10 20 30 40 50 60 70 80 90 100
Ω
R
G
0
10 20 30 40 50 60 70 80 90 100
Ω
R
G
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
120
A
100
I
CM
1
K/W
0.1
Z
thJC
R
G
= 22Ω
T
J
= 125°C
V
CEK
< V
CES
Fig.10 Typ. turn off energy and switching
times versus gate resistor
80
60
40
20
0
0
200
400
600
800 1000 1200
V
V
CE
diode
0.01
0.001
0.0001
IGBT
single pulse
75-12
0.00001
0.00001 0.0001
0.001
0.01
t
0.1
s
1
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
©1998 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
842
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