BFP620_E7764
NPN Silicon Germanium RF Transistor
High gain low noise RF transistor
Provides outstanding performance
for a wide range of wireless applications
Ideal for CDMA and WLAN applications
Outstanding noise figure
F
= 0.7 dB at 1.8 GHz
Outstanding noise figure
F
= 1.3 dB at 6 GHz
Maximum stable gain
G
ms
= 21.5 dB at 1.8 GHz
G
ma
= 11 dB at 6 GHz
Gold metallization for extra high reliability
3
4
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
1
Junction - soldering point
2)
2
1
VPS05605
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP620_E7764
Maximum Ratings
Parameter
R2s
1=B
2=E
3=C
4=E
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
-
-
SOT343
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
2.3
7.5
7.5
1.2
80
3
185
150
-65 ... 150
-65 ... 150
Value
V
mA
mW
°C
95°C
Unit
300
K/W
Jul-03-2003
BFP620_E7764
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 7.5 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 50 mA,
V
CE
= 1.5 V
h
FE
100
180
320
-
I
EBO
-
-
3
µA
I
CBO
-
-
100
nA
I
CES
-
-
10
µA
V
(BR)CEO
2.3
2.8
-
V
typ.
max.
Unit
2
Jul-03-2003
BFP620_E7764
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 50 mA,
V
CE
= 1.5 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 2 V,
f
= 1 MHz
Collector emitter capacitance
V
CE
= 2 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
I
C
= 5 mA,
V
CE
= 1.5 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
I
C
= 5 mA,
V
CE
= 1.5 V,
f
= 6 GHz,
Z
S
=
Z
Sopt
Power gain, maximum stable
1)
I
C
= 50 mA,
V
CE
= 1.5 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 50 mA,
V
CE
= 1.5 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 6 GHz
Transducer gain
f
= 1.8 GHz
I
C
= 50 mA,
V
CE
= 1.5 V,
Z
S
=
Z
L
= 50
f
= 6 GHz
Third order intercept point at output
2)
V
CE
= 2 V,
I
C
= 50 mA,
f
= 1.8 GHz,
1dB Compression point at output
f
= 1.8 GHz
Z
S
=
Z
L
= 50
|S
21e
|
2
,
-
,
-
IP
3
-
9.5
25
-
-
dBm
20
-
dB
I
C
= 50 mA,
V
CE
= 1.5 V,
Z
S
=
Z
L
= 50
G
ma
-
11
-
dB
G
ms
F
-
-
-
0.7
1.3
21.5
-
-
-
dB
dB
C
eb
-
0.46
-
C
ce
-
0.22
-
C
cb
-
0.12
0.2
pF
-
65
-
Unit
GHz
1
G
1/2
ma
= |
S
21e
/
S
12e
| (k-(k²-1) ),
G
ms
= |
S
21e
/
S
12e
|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
I
C
= 50 mA,
V
CE
= 2 V,
Z
S
=
Z
L
= 50
,
P
-1dB
-
15
-
3
Jul-03-2003
BFP620_E7764
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
AF =
TITF1
0.22
1000
2
2
2
2.707
250.7
1.43
2.4
0.6
0.2
0.5
3
2
-0.0065
fA
V
-
V
-
fF
ps
A
V
ns
-
-
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
NK =
FC =
KF =
TITF2
425
0.25
50
10
3.129
0.6
0.75
10
0
0.5
128.1
-1.42
0.8
7.291E-11
1.0E-5
-
A
-
mA
-
V
-
deg
-
fF
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1.025
21
1
18
1.522
2.364
0.3
1.5
124.9
1
0.52
1.078
298
-
fA
-
pA
mA
-
V
fF
-
V
eV
K
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
R C B S
C B C C
C
B F P 6 2 0 _ C h ip
S
B
E
R C E S
L C C
B
L B B
L B C
C B E C
R C C S
L C B
C
L E C
C B E I
L E B
C B E O
T =
2 5 ° C
C C E O
C C E I
Itf = 2 4 0 0 * ( 1 - 6 .5 e -3 * (T -2 5 ) + 1 .0 e -5 * (T -2 5 )^ 2 )
E
1200
300
Valid up to 6GHz
4
Jul-03-2003
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
LBC =
LCC =
LEC =
LBB =
LCB =
LEB =
CBEC =
CBCC =
CES =
CBS =
CCS =
CCEO =
CBEO =
CCEI =
CBEI =
RBS =
RCS =
RES =
60
50
15
764.5
725.4
259.6
98.4
55.9
140
54
50
106.5
106.7
132.4
99.6
1200
pH
pH
pH
pH
pH
pH
fF
fF
fF
fF
fF
fF
fF
fF
fF
BFP620_E7764
Total power dissipation
P
tot
= (
T
S
)
Permissible Pulse Load
R
thJS
=
(
t
p
)
200
mW
160
R
thJS
140
P
tot
120
100
80
60
40
20
0
0
120
°C
20
40
60
80
100
10
1
P
totmax
/
P
totDC
C
CB
D=0
0.005
0,01
0,02
0,05
0,1
0,2
0,5
10
0 -7
10
10
-6
10
P
totmax
/
P
totDC
=
(
t
p
)
0.4
pF
0.3
0.25
0.2
0.15
0.1
0.05
-5
10
-4
10
-3
10
-2
°C
10
0
0
0
1
2
3
4
5
V
t
p
5
Jul-03-2003
Permissible Pulse Load
10
3
K/W
10
2
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
150
10
1 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
°C
10
0
T
S
t
p
Collector-base capacitance
C
cb
= (
V
CB
)
f
= 1MHz
7
V
CB
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