电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

HLMP-Q106FE011

产品描述Subminiature High Performance TS AlGaAs Red LED Lamps
产品类别光电子/LED   
文件大小367KB,共8页
制造商HP(Keysight)
官网地址http://www.semiconductor.agilent.com/
下载文档 全文预览

HLMP-Q106FE011概述

Subminiature High Performance TS AlGaAs Red LED Lamps

HLMP-Q106FE011文档预览

Agilent Subminiature High Performance
TS AlGaAs Red LED Lamps
Data Sheet
HLMP-P106/P156
HLMP-Q102/Q152
HLMP-Q106/Q156
Description
Flat Top Package
The HLMP-Pxxx Series flat top
lamps use an untinted, non-
diffused, truncated lens to
provide a wide radiation pattern
that is necessary for use in
backlighting applications. The
flat top lamps are also ideal for
use as emitters in light pipe
applications.
Dome Packages
The HLMP-Qxxx Series dome
lamps, for use as indicators, use
a tinted, diffused lens to provide
a wide viewing angle with high
on-off contrast ratio. High
brightness lamps use an
untinted, nondiffused lens to
provide a high luminous inten-
sity within a narrow radiation
pattern.
Lead Configurations
All of these devices are made by
encapsulating LED chips on
axial lead frames to form molded
epoxy subminiature lamp
packages. A variety of package
configuration options is
available. These include special
surface mount lead configura-
tions, gull wing, yoke lead, or Z-
bend. Right angle lead bends at
2.54 mm (0.100 inch) and 5.08
mm (0.200 inch) center spacing
are available for through hole
mounting. For more information
refer to Standard SMT and
Through Hole Lead Bend
Options for Subminiature LED
Lamps data sheet.
Technology
These subminiature solid state
lamps utilize a highly optimized
LED material technology,
transparent substrate aluminum
gallium arsenide (TS AlGaAs).
This LED technology has a very
high luminous efficiency,
capable of producing high light
output over a wide range of
drive currents (500
µA
to 50
mA). The color is deep red at a
dominant wavelength of 644 nm
deep red. TS AlGaAs is a flip-
chip LED technology, die
attached to the anode lead and
wire bonded to the cathode lead.
Available viewing angles are
75° , 35° , and 15° .
Features
• Subminiature flat top package
Ideal for backlighting and light
piping applications
• Subminiature dome package
Diffused dome for wide viewing
angle
Non-diffused dome for high
brightness
• Wide range of drive currents
500
µA
to 50 mA
• Ideal for space limited
Applications
• Axial leads
• Available with lead configurations
for surface mount and through
hole PC board mounting
Device Selection Guide
Package Description
Domed, Diffused Tinted,
Standard Current
Domed, Diffused Tinted,
Low Current
Domed, Nondiffused
Untinted, Standard Current
Domed, Nondiffused
Untinted, Low Current
Flat Top, Nondiffused,
Untinted, Standard Current
Flat Top, Nondiffused
Untinted, Low Current
Viewing Angle
2
q
1/2
35
35
15
15
75
75
Deep Red
R
d
= 644 nm
HLMP-Q102
HLMP-Q152
HLMP-Q106
HLMP-Q156
HLMP-P106
HLMP-P156
2
7
130
2
400
Typical Iv
I
F
= 500
µa
Typical Iv
I
F
= 20 mA
100
Package Outline
B
B
B
B
A
A
Ordering Information
HLMX-XXXX-X X X X X
Packaging
Option
Color Bin
Selection
Max. Iv Bin
Min. Iv Bin
4 x 4 Prod.
Part
Number
2
Package Dimensions
A) Flat Top Lamps
0.50 (0.020) REF.
1.40 (0.055)
1.65 (0.065)
11.68 (0.460)
10.67 (0.420)
BOTH SIDES
NOTE 3
ANODE
B) Diffused and Nondiffused Dome Lamps
0.50 (0.020) REF.
11.68 (0.460)
10.67 (0.420)
BOTH SIDES
NOTE 3
ANODE
CATHODE
1.65 (0.065)
DIA.
1.91 (0.075)
0.20 (0.008) MAX.
0.46 (0.018)
0.56 (0.022)
0.25 (0.010) MAX.*
NOTE 2
CATHODE
1.65 (0.065)
DIA.
1.91 (0.075)
0.20 (0.008) MAX.
0.46 (0.018)
0.56 (0.022)
0.25 (0.010) MAX.*
NOTE 2
* REFER TO FIGURE 1 FOR DESIGN CONERNS.
0.76 (0.030) R.
0.89 (0.035)
0.94 (0.037)
1.24 (0.049)
0.63 (0.025)
0.38 (0.015)
2.92 (0.115)
MAX.
0.63 (0.025)
0.38 (0.015)
0.18 (0.007)
0.23 (0.009)
2.03 (0.080)
1.78 (0.070)
2.21 (0.087)
1.96 (0.077)
2.21 (0.087)
1.96 (0.077)
1.14 (0.045)
1.40 (0.055)
2.44 (0.096)
1.88 (0.074)
2.08 (0.082)
2.34 (0.092)
0.18 (0.007)
0.23 (0.009)
0.79 (0.031) MAX.
2.08 (0.082)
2.34 (0.092)
CATHODE STRIPE
NOTE 3
0.79 (0.031)
0.53 (0.021)
CATHODE STRIPE
NOTE 3
NOTES:
1. ALL DIMENSIONS ARE IN MILLIMETRES (INCHES).
2. PROTRUDING SUPPORT TAB IS CONNECTED TO ANODE LEAD.
3. LEAD POLARITY FOR THESE TS AlGaAs SUBMINIATURE LAMPS IS OPPOSITE TO THE
LEAD POLARITY OF SUBMINIATURE LAMPS USING OTHER LED TECHNOLOGIES.
ANODE
TAB
NO. CATHODE DOWN.
YES. ANODE DOWN.
Figure 1. Proper right angle mounting to a PC board to prevent protruding anode tab from
shorting to cathode c onnection.
3
Absolute Maximum Ratings at T
A
= 25°C
Parameters
DC Forward Current
[1]
Peak Forward Current
[2]
Average Forward Current
[2,3]
Transient Forward Current (10
µs
Pulse)
[4]
Power Dissipation
Reverse Voltage
Junction Temperature
Operating Temperature
Storage Temperature
Lead Soldering Temperature
[1.6 mm (0.063 in.) from body]
Reflow Soldering Temperature
Title
50 mA
300 mA
30 mA
500 mA
100 mW
5V
110°C
-55°C to +100°C
-55°C to +100°C
260°C for 5 seconds
260°C for 20 seconds
Notes:
1. Derate linearly as shown in Figure 6.
2. Refer to Figure 7 to establish pulsed operating conditions.
3. Maximum IAVG at f = 1 kHz, DF = 10%.
4. The transient peak current is the maximum non-recurring peak current the device can withstand
without damaging the LED die and wire bonds. It is not recommended that the device be
operated at peak currents above the Absolute Maximum Peak Forward Current.
Optical Characteristics at T
A
= 25°C
Luminous Intensity
I
V
(mcd)
@ 20 mA
[1]
Min.
Typ.
100
25
63
400
100
130
Total Flux
f
V
(mlm)
@ 20 mA
[2]
Typ.
280
-
280
Peak
Wavelength
l
peak
(nm)
Typ.
654
654
654
Color, Dominant
Wavelength
l
d [3]
(nm)
Typ.
644
644
644
Viewing Angle
2q
1
/
2
Degrees
[4]
Typ.
15
35
75
Luminous
Efficacy
h
v[5]
(lm/w)
85
85
85
Part Number
HLMP-
Q106-R00xx
Q102-N00xx
P106-Q00xx
Optical Characteristics at T
A
= 25°C
Part Number
(Low Current)
HLMP-
Q156-H00xx
Q152-G00xx
P156-EG0xx
Luminous Intensity
I
V
(mcd)
@ 0.5 mA
[1]
Min.
Typ.
2.5
1.6
0.63
7
2
2
Total Flux
f
V
(mlm)
@ 0.5 mA
[2]
Typ.
10.5
-
10.5
Peak
Wavelength
l
peak
(nm)
Typ.
654
654
654
Color, Dominant
Wavelength
l
d[3]
(nm)
Typ.
644
644
644
Viewing Angle
2f
1
/
2
Degrees
[4]
Typ.
15
35
75
Luminous
Efficacy
h
v[5]
(lm/w)
85
85
85
Notes:
1. The luminous intensity, Iv, is measured at the mechanical axis of the lamp package. The actual peak of the spatial radiation pattern may not be
aligned with this axis.
2.
f
v
is the total luminous flux output as measured with an integrating sphere.
3. The dominant wavelength,
l
d
, is derived from the CIE Chromaticity Diagram and represents the color of the device.
4.
q
1
/
2
is the off-axis angle where the liminous intensity is 1/2 the peak intensity.
5. Radiant intensity, I
v
, in watts/steradian, may be calculated from the equation I
v
= I
v
/h
v
, where I
v
is the luminous intensity in candelas and
h
v
is the
luminous efficacy in lumens/watt.
4
Electrical Characteristics at T
A
= 25°C
Forward Voltage
V
F
(Volts)
@ I
F
= 20 mA
Typ.
Max.
1.9
1.9
1.9
2.4
2.4
2.4
Reverse Breakdown
V
R
(Volts)
@ I
R
= 100
µA
Min. Typ.
5
5
5
20
20
20
Capacitance
C (pF)
V
F
= 0,
f = 1 MHz
Typ.
20
20
20
Speed of Response
t
s
(ns)
Time Constant
e
-t/t s
Typ.
45
45
45
Part
Number
HLMP-
Q106
Q102
P106
Thermal
Resistance
Rq
J-PIN
(°C/W)
170
170
170
Electrical Characteristics at T
A
= 25°C
Part
Number
(Low
Current)
HLMP-
Q156
Q152
P156
Forward Voltage
V
F
(Volts)
@ I
F
= 0.5 mA
Typ.
Max.
1.6
1.6
1.6
1.9
1.9
1.9
Reverse Breakdown
V
R
(Volts)
@ I
R
= 100
µA
Min. Typ.
5
5
5
20
20
20
Capacitance
C (pF)
V
F
= 0,
f = 1 MHz
Typ.
20
20
20
Speed of Response
t
s
(ns)
Time Constant
e
-t/t s
Typ.
45
45
45
Thermal
Resistance
Rq
J-PIN
(°C/W)
170
170
170
1.0
300
200
100
50
RELATIVE LUMINOUS INTENSITY
(NORMALIZED AT 20 mA)
I
F
– FORWARD CURRENT – mA
2.4
2.0
1.0
0.5
RELATIVE INTENSITY
10
-1
20
10
5
2
0.2
0.1
0.05
10
-2
10
-3
500
600
700
1000
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
F
– FORWARD VOLTAGE – V
0.01
0.5
1
2
5
10
20
50
WAVELENGTH – nm
I
F
– DC FORWARD CURRENT – mA
Figure 2. Relative intensity vs. wavelength.
Figure 3. Forward current vs. forward voltage.
Figure 4. Relative luminous intensity vs. DC
forward current.
50
f > 1000 Hz
40
f > 300 Hz
30
f > 100 Hz
20
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
2
5
10
20
50
100 200 300
I
PEAK
– PEAK FORWARD CURRENT – mA
I
F
– FORWARD CURRENT – mA
50
1.1
η
V
– RELATIVE EFFICIENCY
(NORMALIZED AT 20 mA)
40
JA
= 400° C/W
30
JA
= 550° C/W
20
I
AVG
= AVERAGE FORWARD CURRENT – mA
10
10
0
0
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE – °C
0
50
100
150
200
250
300
I
PEAK
– PEAK FORWARD CURRENT – mA
Figure 5. Relative efficiency vs. peak forward
current.
Figure 6. Maximum forward DC current vs.
ambient temperature. Derating based on
T
J
MAX = 110°C.
Figure 7. Maximum average current vs. peak
forward current.
5
【先楫HPM6750EVKMINI测评】4# HPM6750双核体验
本帖最后由 太阳上的骑士 于 2022-7-27 11:23 编辑 HPM6750集成2个RISC-V 处理器,两个处理器配置相同,但分主从,CPU0 为主CPU,CPU1 为从CPU。 使用多核处理器,主要关心五个问题: ......
太阳上的骑士 国产芯片交流
那个只读优盘是咋回事
u盘的程序是在小板上跑的,还是仿真器上跑的??...
zxinqiao stm32/stm8
恒流源
我有个0-10的D/A模块,我想用D/A输出的电压值去改变运放横流输出的电流值,要求是输出0-300μA的电流,用lm358p做,负载大小范围0-10K,线性要好,横流效果也要好,谁能帮忙设计下电路,芯片供 ......
lv499970142 电源技术
关于今后打算做嵌入式系统的问题(100分)
我是电子信息工程专业大二的学生,对嵌入式很感兴趣,以后打算读这方面的研究生。 但现在我面临着一个矛盾:搞嵌入式这种偏向底层的领域要学到可以到社会打工赚钱,一般都要学好几年,但是现在 ......
tsz 嵌入式系统
UOUT=1V的DC/DC变换器发展趋势
UOUT=1V的DC/DC变换器发展趋势 为了以更低的功耗获得更高的速度和更佳的性能,半导体器件正在向1V工作电压发展,这也对DC/DC变换器提出了更高的要求。由于便携产品将率先采用1V工作电压,因而 ......
zbz0529 模拟电子
FLUCK17B电路图及校准方法
178828 电路图 178827 校准方法 ...
qq849682862 综合技术交流

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1139  9  1381  1619  936  18  51  52  1  11 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved