Datasheet> 器件分类 > 分立半导体> 二极管> 1N4150UR

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1N4150UR: 产品描述Rectifier Diode, 1 Element, 0.3A, Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2; 产品类别分立半导体二极管; 文件大小202KB，共2页; 制造商Cobham Semiconductor Solutions

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1N4150UR概述

Rectifier Diode, 1 Element, 0.3A, Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2

1N4150UR规格参数

参数名称	属性值
零件包装代码	DO-213AA
包装说明	O-LELF-R2
针数	2
Reach Compliance Code	unknow
ECCN代码	EAR99
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JEDEC-95代码	DO-213AA
JESD-30 代码	O-LELF-R2
JESD-609代码	e0
元件数量	1
端子数量	2
最大输出电流	0.3 A
封装主体材料	GLASS
封装形状	ROUND
封装形式	LONG FORM
认证状态	Not Qualified
最大反向恢复时间	0.004 µs
表面贴装	YES
端子面层	TIN LEAD
端子形式	WRAP AROUND
端子位置	END
Base Number Matches	1

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Silicon Switching Diodes

1N4150UR, 1N4150UR-1 & 1N3600UR

Features

•

Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231

Metallurgically Bonded

Hermetically Sealed

Double Plug Construction

Maximum Ratings

Operating & Storage Temperature: -65 °C to +175 °C

Operating Current: 300 mA @ TA = +25 °C

Derating: 2.0 mA dc/°C Above TL = + 75 °C @ L = 3/8”

Surge Current A: 2A (pk) tp = 8.3 mS, VRM = 0

Surge Current B: 4A (pk) tp = 1 us, VRM = 0

Electrical Specifications @ +25 ºC (Unless Otherwise Specified)

VBR

TYPE

Number

IR = 10

μA

V dc

1N3600UR

1N4150UR, -1

V (pk)

VRWM

IR1

VR = 50 Vdc

TA = 25 °C

μA

0.1

IR2

VR = 50 Vdc

TA =150°C

μA

100

IR = 0; f = 1 MHz

ac signal = 50 mV (p-P)

2.5

Trr

IF = IR = 10 to 100 mA dc

RL = 100

4.0

Forward Voltage Limits - All Types

VF1

IF = 1 mA dc

Limits

V dc

minimum

maximum

0.540

0.620

V dc

0.660

0.740

VF2

IF = 10 mA dc

VF3

IF = 50 mA dc

(Pulsed)

V dc

0.760

0.860

VF4

IF = 100 mA dc

(Pulsed)

V dc

0.820

0.920

VF5

IF = 200 mA dc

(Pulsed)

V dc

0.870

1.000

Outline Drawing

LEADED DESIGN DATA

CASE: DO – 213AA, Hermetically sealed glass case.

(MELF, SOD-80, LL34)

LEAD FINISH: Tin / Lead

THERMAL RESISTANCE: (R

ӨJEC

): 100 °C/W maximum

THERMAL IMPEDANCE: (Z

ӨJX

): 70 °C/W maximum

POLARITY: Cathode end is banded.

Revision Date: 2/5/2013

1N4150UR相似产品对比

	1N4150UR	1N4150UR-1	1N3600UR
描述	Rectifier Diode, 1 Element, 0.3A, Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2	Rectifier Diode, 1 Element, 0.3A, Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2	Rectifier Diode, 1 Element, 0.3A, Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2
零件包装代码	DO-213AA	DO-213AA	DO-213AA
包装说明	O-LELF-R2	O-LELF-R2	O-LELF-R2
针数	2	2	2
Reach Compliance Code	unknow	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99
外壳连接	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95代码	DO-213AA	DO-213AA	DO-213AA
JESD-30 代码	O-LELF-R2	O-LELF-R2	O-LELF-R2
JESD-609代码	e0	e0	e0
元件数量	1	1	1
端子数量	2	2	2
最大输出电流	0.3 A	0.3 A	0.3 A
封装主体材料	GLASS	GLASS	GLASS
封装形状	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM
认证状态	Not Qualified	Not Qualified	Not Qualified
最大反向恢复时间	0.004 µs	0.004 µs	0.004 µs
表面贴装	YES	YES	YES
端子面层	TIN LEAD	TIN LEAD	TIN LEAD
端子形式	WRAP AROUND	WRAP AROUND	WRAP AROUND
端子位置	END	END	END
Base Number Matches	1	1	1
厂商名称	-	Cobham Semiconductor Solutions	Cobham Semiconductor Solutions
Is Samacsys	-	N	N

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