HMC606
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
v00.0407
1
AMPLIFIERS - CHIP
Typical Applications
The HMC606 is ideal for:
• Radar, EW & ECM
• Microwave Radio
• Test Instrumentation
• Military & Space
• Fiber Optic Systems
Features
Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz
P1dB Output Power: +15 dBm
Gain: 14 dB
Output IP3: +27 dBm
Supply Voltage: +5V @ 64 mA
50 Ohm Matched Input/Output
Die Size: 2.80 x 1.73 x 0.1 mm
Functional Diagram
General Description
The HMC606 is a GaAs InGaP HBT MMIC Distributed
Amplifier die which operates between 2 and 18 GHz.
With an input signal of 12 GHz, the amplifier provides
ultra low phase noise performance of -160 dBc/Hz at
10 kHz offset, representing a significant improvement
over FET-based distributed amplifiers. The HMC606
provides 14 dB of small signal gain, +27 dBm output
IP3 and +15 dBm of output power at 1 dB gain com-
pression while requiring 64 mA from a +5V supply.
The HMC606 amplifier I/Os are internally matched to
50 Ohms facilitating easy integration into Multi-Chip-
Modules (MCMs). All data is taken with the chip in a 50
Ohm test fixture connected via 0.025 mm (1mil) diam-
eter wire bonds of minimal length 0.31 mm (12 mils).
Electrical Specifications,
T
A
= +25° C, Vcc1= Vcc2= 5V
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Phase Noise @ 100 Hz
Phase Noise @ 1 kHz
Phase Noise @ 10 kHz
Phase Noise @ 1 MHz
Supply Current
12
11
Min.
Typ.
2 - 12
14.0
±1.0
0.021
4.5
20
15
15
18
27
-140
-150
-160
-170
64
80
10
10
Max.
Min.
Typ.
12 - 18
13
±1.0
0.25
6.5
22
15
13
15
22
-140
-150
-160
-170
64
80
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
mA
1 - 244
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC606
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
v00.0407
Gain & Return Loss
20
15
10
RESPONSE (dB)
5
0
-5
-10
-15
-20
-25
-30
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
20
18
16
14
GAIN (dB)
12
10
8
6
4
2
0
2
4
6
8
10
12
14
16
18
FREQUENCY (GHz)
+25C
+85C
-55C
1
AMPLIFIERS - CHIP
Input Return Loss vs. Temperature
0
INPUT RETURN LOSS (dB)
-5
-10
-15
-20
-25
-30
2
4
6
8
10
12
14
16
18
FREQUENCY (GHz)
+25C
+85C
-55C
Output Return Loss vs. Temperature
0
OUTPUT RETURN LOSS (dB)
-5
-10
-15
-20
-25
-30
2
4
6
8
10
12
14
16
18
FREQUENCY (GHz)
+25C
+85C
-55C
Power Compression
20
Pout (dBm), Gain (dB), PAE (%)
Noise Figure vs. Temperature
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
2
4
6
8
10
15
NOISE FIGURE (dB)
+25C
+85C
-55C
10
5
0
Output Power
Gain
PAE
-5
-15
-10
-5
Pin (dBm)
0
5
10
12
14
16
18
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 24
HMC606
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
v00.0407
1
AMPLIFIERS - CHIP
P1dB vs. Temperature
20
18
16
14
P1dB (dBm)
Psat vs. Temperature
25
23
21
19
Psat (dBm)
+25C
+85C
-55C
12
10
8
6
4
2
0
2
4
6
8
10
12
14
16
18
FREQUENCY (GHz)
17
15
13
11
9
7
5
2
4
6
8
10
12
14
16
18
FREQUENCY (GHz)
+25C
+85C
-55C
Output IP3 vs. Temperature
35
33
31
29
27
25
23
21
19
17
15
13
11
9
7
5
2
4
6
8
10
Phase Noise @ 12 GHz
0
-20
PHASE NOISE (dBc/Hz)
-40
-60
-80
OIP3 (dBm)
-100
-120
-140
-160
-180
1
10
2
3
4
5
6
+25C
+85C
-55C
12
14
16
18
10
10
10
10
10
FREQUENCY (GHz)
FREQUENCY (Hz)
Phase Noise at P1dB @ 12 GHz
0
-20
PHASE NOISE (dBc/Hz)
-40
-60
-80
Phase Noise at Psat @ 12 GHz
0
-20
PHASE NOISE (dBc/Hz)
-40
-60
-80
-100
-120
-140
-160
-180
1
10
2
3
4
5
6
-100
-120
-140
-160
-180
1
10
2
3
4
5
6
10
10
10
10
10
10
10
10
10
10
FREQUENCY (Hz)
FREQUENCY (Hz)
1 - 246
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC606
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
Typical Supply Current vs. Vcc1, Vcc2
Vcc1= Vcc2 (V)
+4.5
+5.0
+5.5
1.32 W
68.37 °C/W
-65 to +150 °C
-55 to +85 °C
Icc1 + Icc2 (mA)
53
64
74
v00.0407
Absolute Maximum Ratings
Vdd1= Vdd2= 5V
RF Input Power (RFin)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 14.6 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
7V
+15 dBm
175 °C
1
AMPLIFIERS - CHIP
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
Standard
GP-1
Alternate
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 24
HMC606
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
v00.0407
1
AMPLIFIERS - CHIP
Pad Descriptions
Pad Number
Function
Description
This pin is AC coupled and matched
to 50 Ohms from 2 - 18 GHz
Interface Schematic
1
RFIN
2, 4
Vcc1, Vcc2
Vcc1= Vcc2= 5V
3
RFOUT
This pin is AC coupled and matched
to 50 Ohms from 2 - 18 GHz
Assembly Diagram
1 - 248
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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