HANBit
HMF2M32M8G
FLASH-ROM MODULE 8MByte (2M x 32-Bit), 72pin-SIMM, 5V
Part No. HMF2M32M8G
GENERAL DESCRIPTION
The HMF2M32M8G is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a
x32bit configuration. The module consists of eight 1M x 8 FROM mounted on a 72 -pin, double-sided, FR4-printed circuit
board.
2
The HMF2M32M8 is entirely pin and command set compatible with JEDEC standard 4M -bit E PROMs. Commands are
written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to
enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and
output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL -
compatible.
PIN ASSIGNMENT
FEATURES
w
Access time : 75, 90 and 120ns
w
High-density 8MByte design
w
High-reliability, low-power design
w
Single + 5V
±
0.5V power supply
w
Easy memory expansion
w
All inputs and outputs are TTL-compatible
w
FR4-PCB design
w
Low profile 72-pin SIMM
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Minimum 1,000,000 write/erase cycle
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Sectors erase architecture
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Sector group protection
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Temporary sector group unprotection
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The used device is Am29F080B
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SYMBOL
Vss
A3
A2
A1
A0
Vcc
A11
/OE
A10
/RESET
/CE_LL2
/CE_LL1
DQ7
DQ0
DQ1
DQ2
DQ6
DQ5
DQ4
DQ3
/WE
A17
A14
A13
PIN
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
SYMBOL
NC
DQ8
DQ9
DQ10
/CE_LM2
Vcc
/CE_LM1
DQ15
DQ14
DQ13
DQ12
DQ11
A18
A16
Vss
A6
/RY_BY
A5
A4
Vcc
/CE_UM2
/CE_UM1
DQ23
DQ16
PIN
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
SYMBOL
DQ17
DQ18
DQ22
DQ21
DQ20
DQ19
A19
A15
A12
A7
Vcc
A8
A9
DQ24
DQ25
DQ26
/CE_UU2
/CE_UU1
DQ31
DQ30
DQ29
DQ28
DQ27
Vss
OPTIONS
w
Timing
75ns access
90ns access
120ns access
w
Packages
72-pin SIMM
MARKING
-75
-90
-120
17
18
19
20
21
22
23
24
M
72-PIN SIMM
URL: www.hbe.co.kr
REV.02(August,2002)
TOP VIEW
HANBit Electronics Co., Ltd.
1
HANBit
FUNCTIONAL BLOCK DIAGRAM
32
20
HMF2M32M8G
DQ 0-DQ31
DQ 0-31
A0-A19
A0-19
A0-19
DQ0-7
/WE
/OE
/CE-LL1
A0-19
DQ0-7
/WE
/OE
U1
/CE
/CE-LL2
U5
/CE
A0-19
DQ8-15
/WE
/OE
A0-19
DQ8-15
/WE
/OE
U2
/CE
U6
/CE
/CE-LM1
/
CE-LM2
A0-19
DQ16-23
/WE
/OE
/WE
A0-19
DQ 16-23
U3
/CE
/CE-UM2
/OE
U7
/CE
/CE-UM1
A0-19
/WE
/WE
/OE
/OE
DQ24-31
/WE
A0-19
DQ24-31
/WE
/OE
U4
/CE
/OE
U8
/CE
/CE-UU1
/CE-UU2
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE or ERASE
NOTE:
X means don’t care
URL: www.hbe.co.kr
REV.02(August,2002)
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
DQ
HIGH-Z
HIGH-Z
Q
D
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
2
HANBit Electronics Co., Ltd.
HANBit
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage with respect to ground all other pins
Voltage with respect to ground Vcc
Storage Temperature
Operating Temperature
SYMBOL
V
IN,OUT
V
CC
T
STG
T
A
HMF2M32M8G
RATING
-2.0V to +7.0V
-2.0V to +7.0V
-65oC to +125oC
-55oC to +125 oC
Power Dissapation
P
D
8W
w
Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Vcc for
±5%
device Supply Voltages
Vcc for
±
10% device Supply Voltages
Ground
SYMBOL
V
CC
Vcc
V
SS
MIN
4.75V
4.5V
0
0
TYP.
MAX
5.25V
5.5V
0
DC AND OPERATING CHARACTERISTICS
(0oC
≤
TA
≤
70 oC ; Vcc = 5V
±
0.5V )
PARAMETER
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Vcc Active Current for Read(1)
Vcc Active Current for Program
/CE = V
IL
, /OE=V
IH
or Erase(2)
Vcc Standby Current
Low Vcc Lock-Out Voltage
Notes:
1. The Icc current listed is typically less than 2mA/MHz, with /OE at V
IH
.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
/CE= V
IH
I
CC3
V
LKO
3.2
1.0
4.2
mA
V
I
CC2
60
mA
TEST CONDITIONS
Vcc=Vcc max, V
IN
= GND to Vcc
Vcc=Vcc max, VOUT= GND to Vcc
I
OH
= -2.5mA, Vcc = Vcc min
I
OL
= 12mA, Vcc =Vcc min
/CE = V
IL
, /OE=V
IH
,
SYMBOL
I
L1
I
L0
V
OH
V
OL
I
CC1
2.4
0.45
40
MIN
MAX
±1.0
±1.0
UNITS
µA
µA
V
V
mA
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
MIN.
Sector Erase Time
-
TYP.
1
MAX.
Excludes 00H programming
8
sec
prior to erasure
URL: www.hbe.co.kr
REV.02(August,2002)
UNIT
COMMENTS
3
HANBit Electronics Co., Ltd.
HANBit
Byte Programming Time
Chip Programming Time
-
-
7
7.2
300
21.6
µs
sec
HMF2M32M8G
Excludes system-level overhead
Excludes system-level overhead
CAPACITANCE
PARAMETER
SYMBOL
C
IN
C
OUT
C
IN2
PARAMETER
TEST SETUP
DESCRIPTION
Input Capacitance
Output Capacitance
Control Pin Capacitance
o
MIN
6
8.5
7.5
MAX
7.5
12
9
UNIT
pF
pF
pF
V
IN
= 0
V
OUT
= 0
V
IN
= 0
Notes
: Test conditions T
A
= 25 C, f=1.0 MHz.
AC CHARACTERISTICS
u
Read Only Operations Characteristics
PARAMETER
SYMBOLS
JEDEC
t
AVAV
t
AVQV
STANDARD
t
RC
t
ACC
Address to Output Delay
/OE = V
IL
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
t
CE
t
OE
t
DF
t
DF
t
QH
/CE or /OE, Whichever Occurs First
Chip Enable to Output Delay
Chip Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Addresses,
Min
0
0
ns
/OE = V
IL
Max
Max
Max
Max
70
40
20
20
90
40
20
20
ns
ns
ns
ns
Read Cycle Time
/CE = V
IL
Max
70
90
ns
Min
70
90
ns
DESCRIPTION
TEST SETUP
-75
-90
UNIT
TEST SPECIFICATIONS
TEST CONDITION
Output load
Output load capacitance,
30
C
L
(Including jig capacitance)
Input rise and full times
Input pulse levels
Input timing measurement reference levels
Output timing measurement reference levels
5
0.0 - 3.0
1.5
1.5
20
0.45-2.4
0.8, 2.0
0.8, 2.0
ns
V
V
V
100
pF
75
ALL OTHERS
1TTL gate
UNIT
URL: www.hbe.co.kr
REV.02(August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
5.0V
HMF2M32M8G
2.7kΩ
Device
Under
Test
C
L
IN3064
or Equivalent
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
u
Erase/Program Operations
PARAMETER
SYMBOLS
JEDEC
t
AVAV
t
AVWL
t
WLAX
t
DVWH
t
WHDX
STANDARD
t
WC
t
AS
t
AH
t
DS
t
DH
t
OES
t
GHWL
t
ELWL
t
WHEH
t
WLWH
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
t
CS
t
CH
t
WP
t
WPH
t
WHWH1
t
WHWH2
t
VCS
Notes
:
1. This does not include the preprogramming time
2. This timing is only for Sector Protect operations
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recover Time Before Write
/CE Setup Time
/CE Hold Time
Write Pulse Width
Write Pulse Width High
Byte Programming Operation
Sector Erase Operation (Note1)
Vcc set up time
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Min
70
0
40
40
0
0
0
0
0
40
20
7
1
50
90
0
45
45
0
0
0
0
0
45
20
7
1
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
µs
DESCRIPTION
-75
-90
UNIT
URL: www.hbe.co.kr
REV.02(August,2002)
5
HANBit Electronics Co., Ltd.
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