HANBit
HMS51232M4L
HAN
BI T
SRAM MODULE 2Mbyte (512K x 32-Bit),
SIMM 5V
Part No.
LOW POWER, 72-Pin
HMS51232M4L
GENERAL DESCRIPTION
The HMS51232M4L is a static random access memory (SRAM) module containing 524,288 words organized in
a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin, single-sided, FR4-
printed circuit board.
The HMS51232M4L also support low data retention voltage for battery back-up operations with low data retention
current. Four chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1 and /CE_LL1) are used to enable the module’s
4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.
Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be
powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.
FEATURES
Access time : 55, 70ns
High-density 2MByte design
High-reliability, low-power design
Single +5V
±0.5V
power supply
Low data retention voltage : 2V(min)
Three state output and TTL-compatible
FR4-PCB design
Low profile 72-Pin SIMM
Vss
A3
A2
A1
A0
Vcc
A11
/OE
A10
Vcc
NC
/CE_LL1
DQ7
DQ0
DQ1
DQ2
DQ6
DQ5
DQ4
DQ3
A15
A17
/WE
A13
Vcc
DQ8
DQ9
DQ10
NC
Vcc
/CE_LM1
DQ15
DQ14
DQ13
DQ12
DQ11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
PIN ASSIGNMENT
A18
A16
Vss
A6
Vcc
A5
A4
Vcc
NC
/CE_UM1
DQ23
DQ16
DQ17
DQ18
DQ22
DQ21
DQ20
DQ19
Vcc
A14
A12
A7
Vcc
A8
A9
DQ24
DQ25
DQ26
NC
/CE_UU1
DQ31
DQ30
DQ29
DQ28
DQ27
Vss
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
OPTIONS
Timing
55ns access
70ns access
MARKING
-55
-70
M
Packages
72-pin SIMM
72-Pin SIMM
TOP VIEW
1
HANBit Electronics Co.,Ltd.
HANBit
FUNCTIONAL BLOCK DIAGRAM
32
DQ0 - DQ31
A0 - A18
19
A0-18
DQ 0-7
/WE
/OE
HMS51232M4L
U1
/CE
/CE_UU1
A0-18
DQ 8-15
/WE
/OE
U2
/CE
/CE_UM1
A0-18
DQ16-23
/WE
/OE
U3
/CE
/CE_LM1
A0-18
DQ24-31
/WE
/OE
/WE
/OE
U4
/CE
/CE_LL1
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
DQ
HIGH-Z
HIGH-Z
Dout
Din
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
2
HANBit Electronics Co.,Ltd.
HANBit
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
Storage Temperature
SYMBOL
V
IN,OUT
V
CC
P
D
T
STG
HMS51232M4L
RATING
-0.5V to +7.0V
-0.5V to +7.0V
4W
-65oC to +150oC
Operating Temperature
T
A
0oC to +70oC
Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
*
SYMBOL
V
CC
V
SS
V
IH
V
IL
MIN
4.5V
0
2.2
-0.5*
( TA=0 to 70 o C )
TYP.
5.0V
0
-
-
MAX
5.5V
0
Vcc+0.5V**
0.8V
V
IL
(Min.) = -2.0V (Pulse Width
≤
10ns) for I
≤
20 mA
**
V
IH
(Min.) = Vcc+2.0V (Pulse Width
≤
10ns) for I
≤
20 mA
DC AND OPERATING CHARACTERISTICS (1)
(0oC
≤
TA
≤
70 oC ; Vcc = 5V
±
0.5V )
PARAMETER
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
* Vcc=5.0V, Temp=25 oC
TEST CONDITIONS
V
IN
= Vss to Vcc
/CE=V
IH or /
OE =V
IH
or /WE=V
IL
V
OUT
=Vss to V
CC
I
OH
= -4.0mA
I
OL
= 8.0mA
SYMBO
L
IL
I
IL
0
V
OH
V
OL
MIN
-4
-4
2.4
0.4
MAX
4
4
UNITS
µA
µA
V
V
3
HANBit Electronics Co.,Ltd.
HANBit
DC AND OPERATING CHARACTERISTICS (2)
HMS51232M4L
MAX
DESCRIPTION
Power Supply
Current:Operating
Power Supply
Current:Standby
TEST CONDITIONS
I
IO
=0mA,/CE=V
IL
, V
IN
=V
IL
or
V
IH
, Read
/CE=V
IH
, Other inputs=V
IL
or V
IH
/CE
≥
Vcc-0.2V,
inputs=0~Vcc
Other
SYMBOL
l
CC
l
SB
l
SB1
-55
60
12
400
-70
60
12
400
UNIT
mA
mA
µ
A
CAPACITANCE
DESCRIPTION
Input /Output Capacitance
Input Capacitance
TEST CONDITIONS
V
I/O
=0V
V
IN
=0V
SYMBOL
C
I/O
C
IN
MAX
32
40
UNIT
pF
pF
*
NOTE
: Capacitance is sampled and not 100% tested
AC CHARACTERISTICS
(0oC
≤
TA
≤
70 oC ; Vcc = 5V
±
0.5V, unless otherwise specified)
TEST CONDITIONS
PARAMETER
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
* See test condition of DC and Operating characteristics
VALUE
0.8 to 2.4V
5ns
1.5V
C
L
=100pF + 1TTL
C
L
*
* Including scope and jig capacitance
4
HANBit Electronics Co.,Ltd.
HANBit
READ CYCLE
-55
PARAMETER
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Output
Output Enable to Low-Z Output
Chip Enable to Low-Z Output
Output Disable to High-Z Output
Chip Disable to High-Z Output
Output Hold from Address Change
SYMBOL
HMS51232M4L
-70
UNIT
MAX
MIN
70
55
55
25
70
70
35
5
10
20
20
0
0
10
25
25
MAX
ns
ns
ns
ns
ns
ns
ns
ns
ns
MIN
t
RC
t
AA
t
CO
t
OE
t
OLZ
t
LZ
t
OHZ
t
HZ
t
OH
5
10
0
0
10
55
WRITE CYCLE
-55
SYMBOL
PARAMETER
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End of Write to Output Low-Z
-70
MAX
MIN
70
60
0
60
50
0
20
0
30
0
5
25
MAX
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MIN
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
55
45
0
45
40
0
0
25
0
5
5
HANBit Electronics Co.,Ltd.
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
