HS-65647RH
TM
Data Sheet
August 2000
File Number
2928.3
Radiation Hardened 8K x 8 SOS CMOS
Static RAM
The Intersil HS-65647RH is a fully asynchronous 8K x 8
radiation hardened static RAM. This RAM is fabricated using
the Intersil 1.2 micron silicon-on-sapphire CMOS technology.
This technology gives exceptional hardness to all types of
radiation, including neutron fluence, total ionizing dose, high
intensity ionizing dose rates, and cosmic rays.
Low power operation is provided by a fully static design. Low
standby power can be achieved without pull-up resistors,
due to the gated input buffer design.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95823. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Features
• Electrically Screened to SMD # 5962-95823
• QML Qualified per MIL-PRF-38535 Requirements
• 1.2 Micron Radiation Hardened SOS CMOS
- Total Dose. . . . . . . . . . . . . . . . . . . . . 300 krad(Si) (Max)
- Transient Upset . . . . . . . . . . . . . . . . . >1 x 10
11
rad(Si)/s
- Single Event Upset . . . . . . . . < 1 x 10
-12
Errors/Bit-Day
• Latch-up Free
• LET Threshold . . . . . . . . . . . . . . . . . . >250 MEV/mg/cm2
• Low Standby Supply Current . . . . . . . . . . . . . 10mA (Max)
• Low Operating Supply Current . . . . . . . . . .100mA (2MHz)
• Fast Access Time . . . . . . . . . . . . . 50ns (Max), 35ns (Typ)
• High Output Drive Capability
• Gated Input Buffers (Gated by E2)
• Six Transistor Memory Cell
• Fully Static Design
Ordering Information
ORDERING NUMBER
5962F9582301QXC
5962F9582301QYC
5962F9582301VXC
5962F9582301VYC
INTERNAL MKT.
NUMBER
HS1-65647RH-8
HS-965647RH-8
HS1-65647RH-Q
HS9-65647RH-Q
TEMP.
RANGE (
o
C)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
• Asynchronous Operation
• CMOS Inputs
• 5V Single Power Supply
• Military Temperature Range . . . . . . . . . . . -55
o
C to 125
o
C
• Industry Standard JEDEC Pinout
Functional Diagram
AI
ROW
ROW
DECODER
128 X 512
MEMORY ARRAY
HS1-65647RH/PROTO HS1-65647RH/PROTO
HS9-65647RH/PROTO HS9-65647RH/PROTO
TRUTH TABLE
E1
X
1
0
0
0
E2
0
1
1
1
1
G
X
X
1
0
X
W
X
X
1
1
0
MODE
Low Power Standby
Disabled
Enabled
Read
Write
E1
G
W
CONTROL
CIRCUIT
E2
I/O7
AI COL
I/O0
INPUT
DATA
CIRCUIT
COLUMN I/O
COLUMN DECODER
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
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