HS-6617RH
TM
Data Sheet
August 2000
File Number
3033.4
Radiation Hardened 2K x 8 CMOS PROM
The Intersil HS-6617RH is a radiation hardened 16K CMOS
PROM, organized in a 2K word by 8-bit format. The chip is
manufactured using a radiation hardened CMOS process,
and is designed to be functionally equivalent to the
HM-6617. Synchronous circuit design techniques combine
with CMOS processing to give this device high speed
performance with very low power dissipation.
On chip address latches are provided, allowing easy
interfacing with recent generation microprocessors that use
multiplexed address/data bus structure, such as the
HS-80C85RH or HS-80C86RH. The output enable control
(G) simplifies microprocessor system interfacing by allowing
output data bus control, in addition to, the chip enable
control. Synchronous operation of the HS-6617RH is ideal
for high speed pipe-lined architecture systems and also in
synchronous logic replacement functions.
Applications for the HS-6617RH CMOS PROM include low
power microprocessor based instrumentation and
communications systems, remote data acquisition and
processing systems, processor control store, and
synchronous logic replacement.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95708. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/space.htm
Features
• Electrically Screened to SMD # 5962-95708
• QML Qualified per MIL-PRF-38535 Requirements
• Total Dose . . . . . . . . . . . . . . . . . . . . . . 100 krad(Si) (Max)
• Latch-Up Free. . . . . . . . . . . . . . . . . . . . >1 x 10
12
rad(Si)/s
• Field Programmable
• Functionally Equivalent to HM-6617
• Pin Compatible with Intel 2716
• Low Standby Power . . . . . . . . . . . . . . . . . . . 1.1mW (Max)
• Low Operating Power . . . . . . . . . . . . 137.5mW/MHz (Max)
• Fast Access Time . . . . . . . . . . . . . . . . . . . . . . 100ns (Max)
• TTL Compatible Inputs/Outputs
• Synchronous Operation
• On Chip Address Latches
• Three-State Outputs
• Nicrome Fuse Links
• Easy Microprocessor Interfacing
• Military Temperature Range . . . . . . . . . . . -55
o
C to 125
o
C
Ordering Information
ORDERING NUMBER
5962R9570801QJC
5962R9570801QXC
5962R9570801VJC
5962R9570801VXC
HS1-6617RH/PROTO
HS9-6617RH/PROTO
INTERNAL
MKT. NUMBER
HS1-6617RH-8
HS9-6617RH-Q
HS1-6617RH-Q
HS9-6617RH-Q
HS1-6617RH/PROTO
HS9-6617RH/PROTO
TEMP. RANGE
(
o
C)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright © Intersil Corporation 2000
HS-6617RH
Die Characteristics
DIE DIMENSIONS:
164mils x 250mils x 19mils
±1mils
INTERFACE MATERIALS:
Glassivation:
Type: SiO
2
Thickness: 8k
Å
±
1k
Å
Top Metallization:
Type: Silicon-Aluminum
Thickness: 13k
Å
±
2k
Å
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
V
DD
ADDITIONAL INFORMATION:
Worst Case Current Density:
1 x 10
5
A/cm
2
Metallization Mask Layout
HS-6617RH
(24)VDD
(23) A8
(22) A9
(5) A3
(4) A4
(2) A6
(1) A7
(21) P
(3)A5
(20) G
A2 (6)
(19) A10
A1 (7)
A0 (8)
GND (12)
Q1 (10)
Q2 (11)
Q3 (13)
Q4 (14)
Q5 (15)
Q6 (16)
Q7 (17)
Q0 (9)
(18) E
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
