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HS9-6664RH/PROTO: 产品描述8K X 8 OTPROM, CDIP28; 产品类别存储; 文件大小125KB，共5页; 制造商Intersil ( Renesas ); 官网地址http://www.intersil.com/cda/home/

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HS9-6664RH/PROTO概述

8K X 8 OTPROM, CDIP28

8K × 8 OTPROM, CDIP28

HS9-6664RH/PROTO规格参数

参数名称	属性值
功能数量	1
端子数量	28
最大工作温度	125 Cel
最小工作温度	-55 Cel
最大供电/工作电压	5.5 V
最小供电/工作电压	4.5 V
额定供电电压	5 V
加工封装描述	SIDE BRAZED, 陶瓷, DIP-28
状态	ACTIVE
工艺	CMOS
包装形状	矩形的
包装尺寸	IN-线
端子形式	THROUGH-孔
端子间距	2.54 mm
端子涂层	锡铅
端子位置	双
包装材料	陶瓷, 金属-SEALED COFIRED
温度等级	MILITARY
内存宽度	8
组织	8K × 8
存储密度	65536 deg
操作模式	ASYNCHRONOUS
位数	8192 words
位数	8K
内存IC类型	OTPROM
串行并行	并行

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HS-6664RH

Data Sheet

August 2000

File Number

3197.4

Radiation Hardened 8K x 8 CMOS PROM

The Intersil HS-6664RH is a radiation hardened 64K CMOS

PROM, organized in an 8K word by 8-bit format. The chip is

manufactured using a radiation hardened CMOS process,

and utilizes synchronous circuit design techniques to

achieve high speed performance with very low power

dissipation.

On-chip address latches are provided, allowing easy

interfacing with microprocessors that use a multiplexed

address/data bus structure. The output enable control (G)

simpliﬁes system interfacing by allowing output data bus

control in addition to the chip enable control (E). All bits are

manufactured storing a logical “0” and can be selectively

programmed for a logical “1” at any bit location.

Applications for the HS-6664RH CMOS PROM include low

power microprocessor based instrumentation and

communications systems, remote data acquisition and

processing systems, and processor control storage.

Speciﬁcations for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed here must be used when ordering.

Detailed Electrical Speciﬁcations for these devices are

contained in SMD 5962-95626. A “hot-link” is provided

on our homepage for downloading.

www.intersil.com/spacedefense/space.htm

Features

• Electrically Screened to SMD # 5962-95626

• QML Qualiﬁed per MIL-PRF-38535 Requirements

• 1.2 Micron Radiation Hardened Bulk CMOS

• Total Dose . . . . . . . . . . . . . . . . . . . . . . 300 krad(Si) (Max)

• Transient Output Upset. . . . . . . . . . . . . .>5 x 10

rad(Si)/s

• LET >100 MEV-cm

/mg

• Fast Access Time . . . . . . . . . . . . . . . . . . . . . . . 35ns (Typ)

• Single 5V Power Supply

• Single Pulse 10V Field Programmable

• Synchronous Operation

• On-Chip Address Latches

• Three-State Outputs

• NiCr Fuses

• Low Standby Current . . . . . . . . . . . . . . <500µA (Pre-Rad)

• Low Operating Current . . . . . . . . . . . . . . . . . . <15mA/MHz

• Military Temperature Range . . . . . . . . . . . -55

C to 125

Ordering Information

ORDERING NUMBER

5962F9562601QXC

5962F9562601QYC

5962F9562601VXC

5962F9562601VYC

HS1-6664RH/PROTO

HS9-6664RH/PROTO

INTERNAL

MKT. NUMBER

HS1-6664RH-8

HS9-6664RH-8

HS1-6664RH-Q

HS9-6664RH-Q

HS1-6664RH/PROTO

HS9-6664RH/PROTO

TEMP. RANGE

(

-55 to 125

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143

Intersil and Design is a trademark of Intersil Corporation.

HS9-6664RH/PROTO相似产品对比

	HS9-6664RH/PROTO	5962F9562601QXC	5962F9562601QYC	HS-6664RH	HS-6664RH_00	HS1-6664RH/PROTO	5962F9562601VXC	5962F9562601VYC
描述	8K X 8 OTPROM, CDIP28	8K X 8 OTPROM, CDIP28	8K X 8 OTPROM, CDIP28	8K X 8 OTPROM, CDIP28	8K X 8 OTPROM, CDIP28	8K X 8 OTPROM, CDIP28	8K X 8 OTPROM, CDIP28	8K X 8 OTPROM, CDIP28
功能数量	1	1	1	1	1	1	1	1
端子数量	28	28	28	28	28	28	28	28
最大工作温度	125 Cel	125 Cel	125 Cel	125 Cel	125 Cel	125 Cel	125 Cel	125 Cel
最小工作温度	-55 Cel	-55 Cel	-55 Cel	-55 Cel	-55 Cel	-55 Cel	-55 Cel	-55 Cel
最大供电/工作电压	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电/工作电压	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
额定供电电压	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
加工封装描述	SIDE BRAZED, 陶瓷, DIP-28	SIDE BRAZED, 陶瓷, DIP-28	SIDE BRAZED, 陶瓷, DIP-28	SIDE BRAZED, 陶瓷, DIP-28	SIDE BRAZED, 陶瓷, DIP-28	SIDE BRAZED, 陶瓷, DIP-28	SIDE BRAZED, 陶瓷, DIP-28	SIDE BRAZED, 陶瓷, DIP-28
状态	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
工艺	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
包装形状	矩形的	矩形的	矩形的	矩形的	矩形的	矩形的	矩形的	矩形的
包装尺寸	IN-线	IN-线	IN-线	IN-线	IN-线	IN-线	IN-线	IN-线
端子形式	THROUGH-孔	THROUGH-孔	THROUGH-孔	THROUGH-孔	THROUGH-孔	THROUGH-孔	THROUGH-孔	THROUGH-孔
端子间距	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
端子涂层	锡铅	锡铅	锡铅	锡铅	锡铅	锡铅	锡铅	锡铅
端子位置	双	双	双	双	双	双	双	双
包装材料	陶瓷, 金属-SEALED COFIRED	陶瓷, 金属-SEALED COFIRED	陶瓷, 金属-SEALED COFIRED	陶瓷, 金属-SEALED COFIRED	陶瓷, 金属-SEALED COFIRED	陶瓷, 金属-SEALED COFIRED	陶瓷, 金属-SEALED COFIRED	陶瓷, 金属-SEALED COFIRED
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
内存宽度	8	8	8	8	8	8	8	8
组织	8K × 8	8K × 8	8K × 8	8K × 8	8K × 8	8K × 8	8K × 8	8K × 8
存储密度	65536 deg	65536 deg	65536 deg	65536 deg	65536 deg	65536 deg	65536 deg	65536 deg
操作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
内存IC类型	OTPROM	OTPROM	OTPROM	OTPROM	OTPROM	OTPROM	OTPROM	OTPROM
串行并行	并行	并行	并行	并行	并行	并行	并行	并行
位数	8K	8K	8K	8K	8K	8K	8K	8K

HS9-6664RH/PROTO

HS9-6664RH/PROTO概述

HS9-6664RH/PROTO规格参数

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