Beam Lead Schottky Diodes for
Mixers and Detectors
(1– 26 GHz)
Technical Data
HSCH-5300 Series
Features
• Platinum Tri-Metal System
High Temperature Stability
• Silicon Nitride Passivation
Stable, Reliable Performance
• Low Noise Figure
Guaranteed 7.5 dB at 26 GHz
• High Uniformity
Tightly Controlled Process
Insures Uniform RF
Characteristics
• Rugged Construction
4 Grams Minimum Lead Pull
• Low Capacitance
0.10 pF Max. at 0 V
• Polyimide Scratch Protection
Outline 07
CATHODE
130 (5)
100 (4)
GOLD LEADS
135 (5)
90 (3)
135 (5)
90 (3)
225 (9)
200 (8)
310 (12)
250 (10)
225 (9)
170 (7)
12 (.5)
8 (.3)
30 MIN (1)
Description
These beam lead diodes are
constructed using a metal-
semiconductor Schottky barrier
junction. Advanced epitaxial
techniques and precise process
control insure uniformity and
repeatability of this planar
passivated microwave semicon-
ductor. A nitride passivation layer
provides immunity from
contaminants which could
otherwise lead to I
R
drift.
The Agilent beam lead process
allows for large beam anchor pads
for rugged construction (typical
6 gram pull strength) without
degrading capacitance.
SILICON
710 (28)
670 (26)
GLASS
60 (2)
40 (1)
DIMENSIONS IN
µm
(1/1000 inch)
Maximum Ratings
Pulse Power Incident at T
A
= 25°C .......................................................... 1 W
Pulse Width = 1
µs,
Du = 0.001
CW Power Dissipation at T
A
= 25°C ................................................ 150 mW
Measured in an infinite heat sink derated linearly
to zero at maximum rated temperature
T
OPR
– Operating Temperature Range ...............................-65°C to +175
°C
T
STG
– Storage Temperature Range ....................................-65°C to +200°C
Minimum Lead Strength ........................................ 4 grams pull on any lead
Diode Mounting Temperature ............................... +350°C for 10 sec. max.
These diodes are ESD sensitive. Handle with care to avoid static
discharge through the diode.
2
Applications
The beam lead diode is ideally
suited for use in stripline or
microstrip circuits. Its small
physical size and uniform dimen-
sions give it low parasitics and
repeatable RF characteristics
through K-band.
The basic medium barrier devices
in this family are DC tested
HSCH-5310, -5312, and -5316. A
batch matched version is available
as the HSCH-5317. Equivalent low
barrier devices are HSCH-5330,
-5332, and -5336. Batch matched
versions are available as
HSCH-5331 and -5333.
For applications requiring
guaranteed RF-tested perform-
ance up to 26 GHz, the HSCH-5340
is selected with batch match units
available as the HSCH-5341. The
HSCH-5318 is selected for 6.2 dB
maximum noise figure at
9.375 GHz; with RF batch match
units available as the HSCH-5319.
The HSCH-5314 is rated at 7.2 dB
maximum noise figure at 16 GHz
with RF batch match units
available as the HSCH-5315.
Assembly Techniques
Thermocompression bonding is
recommended. Welding or
conductive epoxy may also be
used. For additional information
see Application Note 979, “The
Handling and Bonding of Beam
Lead Devices Made Easy,” or
Application Note 993, “Beam Lead
Device Bonding to Soft
Substrates.”
Table IA. Electrical Specifications for RF Tested Diodes at T
A
= 25
°
C
Part
Number
HSCH-
5318
5314
5340
Test
Conditions
Batch*
Matched
HSCH-
5319
5315
5341
∆NF ≤
0.3 dB
∆Z
IF
≤
25
Ω
Low
Max.
Noise
Figure
NF (dB)
6.2 at
9.375 GHz
7.2 at
16 GHz
7.5 at
26 GHz
150
350
1.5:1
4
I
R
≤
10
µA
I
F
Impedance
Z
IF
(Ω)
Min. Max.
200
400
Max.
SWR
1.5:1
Min.
Break-
down
Voltage
V
BR
(V)
4
Max.
Dynamic
Resis-
tance
R
D
(Ω)
12
16
20
I
F
= 5 mA
Max.
Total
Capaci-
tance
C
T
(pF)
0.25
0.15
0.10
V
R
= 0 V
f = 1 MHz
375
I
F
= 1 mA
400
V
R
= 1 V
Max.
Forward
Voltage
V (mV)
F
500
Max.
Leakage
Current
I
R
(nA)
100
Barrier
Medium
DC Load Resistance - 0
Ω
LO Power = 1 mW
I
F
= 30 MHz, 1.5 dB NF
*Minimum batch size 20 units.
Note:
1. C
T
= C
J
+ 0.02 pF (fringing cap).
3
Table IB. Electrical Specifications for DC Tested Diodes at T
A
= 25
°
C
Part
Number
HSCH-
5316
5312
5310
5336
5332
5330
Test
Conditions
Batch*
Matched
HSCH-
5317
Minimum
Breakdown
Voltage
V
BR
(V)
4
Maximum
Dynamic
Resistance
R
D
(Ω)
12
16
20
12
16
20
I
F
= 5 mA
Maximum
Total
Capacitance
C
T
(pF)
0.25
0.15
0.10
0.25
0.15
0.10
V =0V
R
f = 1 MHz
Maximum
Forward
Voltage
V
F
(mV)
500
Maximum
Leakage
Current
I
R
(nA)
100
Barrier
Medium
Low
5333
5331
∆V
F
≤
15 mV
@ 5 mA
4
375
400
I
R
≤
10
µA
I
F
= 1 mA
V
R
= 1 V
*Minimum batch size 20 units.
Typical Detector Characteristics at T
A
= 25
°
C
Medium Barrier and Low Barrier (DC Bias)
Parameter
Tangential Sensitivity
Voltage Sensitivity
Video Resistance
Symbol
TSS
γ
R
V
Typical Value
-54
6.6
1400
Units
dBm
mV/µW
Ω
Test Conditions
20
µA
Bias, R
L
= 100 KΩ
Video Bandwidth = 2 MHz
f = 10 GHz
Low Barrier (Zero Bias)
Parameter
Tangential Sensitivity
Voltage Sensitivity
Video Resistance
Symbol
TSS
γ
R
V
Typical Value
-44
10
1.8
Units
dBm
mV/µW
MΩ
Test Conditions
Zero Bias, R
L
= 10 MΩ
Video Bandwidth = 2 MHz
f = 10 GHz
SPICE Parameters
HSCH-5316 HSCH-5312
Parameter Units HSCH-5318 HSCH-5314
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
P
T
M
V
pF
eV
A
A
Ω
V
5
0.2
0.69
10E - 5
3 x 10E - 10
1.08
5
0.65
2
0.5
5
0.13
0.69
10E - 5
3 x 10E - 10
1.08
9
0.65
2
0.5
HSCH-5330
HSCH-5310 HSCH-5340 HSCH-5332 HSCH-5336
5
0.09
0.69
10E - 5
3 x 10E - 10
1.08
13
0.65
2
0.5
5
0.09
0.69
10E - 5
4 x 10E - 10
1.08
13
0.5
2
0.5
5
0.13
0.69
10E - 5
4 x 10E - 8
1.08
9
0.5
2
0.5
5
0.20
0.69
10E-5
4 x 10E-8
1.08
6
0.5
2
0.5
4
Typical Parameters
100
FORWARD CURRENT (mA)
FORWARD CURRENT (mA)
+125°C
+25°C
-55°C
100
+125°C
+25°C
-55°C
7.5
NOISE FIGURE (dB)
10
10
7.0
0.1 pF
6.5
0.15 pF
6.0
0.25 pF
5.5
1
1
0.1
0.1
0.01
0.01
5.0
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
0
2
4
FORWARD VOLTAGE (V)
FORWARD VOLTAGE (V)
8
12
16 20
9.375
FREQUENCY (GHz)
24
26
28
Figure 1. Typical Forward
Characteristics for Medium Barrier
Beam Lead Diodes. HSCH-5310 Series.
Figure 2. Typical Forward
Characteristics for Low Barrier Beam
Lead Diodes. HSCH-5330, -5340 Series.
Figure 3. Typical Noise Figure vs.
Frequency.
1.0
1.0
0.
2.0
18
10
20
µA
50
µA
20
10
150
µA
26 GHz
1.0
2.0
2.0
3.
0
5.
.0
10
3.
0
0.2
26 GHz
5.
0
.0
0.2
0.2
0.5
2
0.2
0.5
1.0
2.0
3.0
5.0
10
10
0.
5
0.
5
2.0
Figure 4. Typical Admittance Characteristics with 1 mA Self
Bias. HSCH-5340 and -5341.
1.0
Figure 5. Typical Admittance Characteristics with External
Bias. HSCH-5340 and -5341.
1.0
2.0
5.
0
3.
0
5.
0
0.2
0.2
10.0
.0
10
3.0
.0
10.0
5.0
2
0
3.
0
0.
5
5
5
0.2
1 mA
1.5 mA
3 mA
18 GHz
10
3.
0
0
5.
10
.0
0.2
10
0
5.
.0
10
0.2
0.5
1.0
2.0
10.0
.0
10
0.
5
0.
5
2.0
1.0
Figure 6. Typical Admittance Characteristics with Self Bias.
HSCH-5314 and -5315.
Figure 7. Typical Admittance Characteristics with External
Bias. HSCH-5314 and -5315.
0.2
12 GHz
1 mA
1.5 mA
3 mA
0
3.
5.
0
0.2
6
5.
0
.0
10
2
0.2
0.5
1.0
2.0
3.0
5.0
.0
10
2
0.2
0.5
1.0
2.0
3.0
5.0
10.0
3.
.0
10
0
2.0
20
µA
50
µA
150
µA
12 GHz
1.0
1.0
2.0
1.0
2.0
2.0
0.
5
1.0
2.0
0.
5
Figure 8. Typical Admittance Characteristics with Self Bias.
HSCH-5318 and -5319.
Figure 9. Typical Admittance Characteristics with External
Bias. HSCH-5318 and -5319.
Models for Each Beam Lead Schottky Diode
HSCH-5340, -5341
1 mA Self Bias
0.03 pF
0.1 nH
11
Ω
0.04 nH
267
Ω
0.11 pF
1.0
5.
0
3.
0
5.
0
0.2
0.2
.0
10
10.0
5.
0
3.
0
5.
0
0.2
0.2
.
10
0
10.0
0.2
0.5
1.0
2.0
3.0
3.0
3.
3.
0
5.0
5.0
2
2
3.
0
20
µA
50
µA
150
µA
18 GHz
1.0
1.0
5
0.
2.0
2.0
0
5
0.
0.
5
0.
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
