HANBit
HSD4M64D4B
Synchronous DRAM Module 32Mbyte (4Mx64-Bit), DIMM, 4Banks, 4K Ref.,
3.3V
Part No. HSD4M64D4B
GENERAL DESCRIPTION
The HSD4M64D4B is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of
four CMOS 1M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy substrate.
Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD4M64D4B
is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets. Synchronous
design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range
of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high
performance memory system applications All module components may be powered from a single 3.3V DC power supply
and all inputs and outputs are LVTTL-compatible.
FEATURES
•
Part Identification
HSD4M64D4B-10
HSD4M64D4B- 8
: 100MHz ( CL=2)
: 125MHz ( CL=3)
HSD4M64D4B-10L : 100MHz ( CL=3)
•
Burst mode operation
•
Auto & self refresh capability (4096 Cycles/64ms)
•
LVTTL compatible inputs and outputs
•
Single 3.3V
±0.3V
power supply
•
MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
•
JEDEC standard
•
All inputs are sampled at the positive going edge of the system clock
•
The used device is 1Mx16Bitx4Banks SDRAM
URL:www.hbe.co.kr
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HANBit
PIN ASSIGNMENT
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Symbol
Vss
DQ0
DQ1
DQ2
DQ3
Vcc
DQ4
DQ5
DQ6
DQ7
DQ8
Vss
DQ9
DQ10
DQ11
DQ12
DQ13
Vcc
DQ14
DQ15
NC
NC
Vss
NC
NC
Vcc
/WE
DQM0
PIN
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
Symbol
DQM1
/CS0
DU
Vss
A0
A2
A4
A6
A8
A10
BA1
Vcc
Vcc
CLK0
Vss
NC
/CS2
DQM2
DQM3
NC
Vcc
NC
NC
NC
NC
Vss
DQ16
DQ17
PIN
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
Symbol
DQ18
DQ19
Vcc
DQ20
NC
NC
CKE1
Vss
DQ21
DQ22
DQ23
Vss
DQ24
DQ25
DQ26
DQ27
Vcc
DQ28
DQ29
DQ30
DQ31
Vss
CLK2
NC
WP
SDA
SCL
Vcc
PIN
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
Symbol
Vss
DQ32
DQ33
DQ34
DQ35
Vcc
DQ36
DQ37
DQ38
DQ39
DQ40
Vss
DQ41
DQ42
DQ43
DQ44
DQ45
Vcc
DQ46
DQ47
NC
NC
Vss
NC
NC
Vcc
/CAS
DQM4
PIN
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
HSD4M64D4B
Symbol
DQM5
NC
/RAS
Vss
A1
A3
A5
A7
A9
BA0
A11
Vcc
CLK1
NC
Vss
CKE0
NC
DQM6
DQM7
NC
Vcc
NC
NC
NC
NC
Vss
DQ48
DQ49
PIN
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Symbol
DQ50
DQ51
Vcc
DQ52
NC
NC
NC
Vss
DQ53
DQ54
DQ55
Vss
DQ56
DQ57
DQ58
DQ59
Vcc
DQ60
DQ61
DQ62
DQ63
Vss
CLK3
NC
SA0
SA1
SA2
Vcc
PIN NAMES
Pin Name
A0 ~ A11
DQ0 ~ DQ63
CKE0 ~ CKE1
/RAS
/WE
Vcc
SDA
DU
Function
Address input (Multiplexed)
Data input/output
Clock enable input
Row address strobe
Write enable
Power supply (3.3V)
Serial data I/O
Do
□
¢
t use
Pin Name
BA0 ~ BA1
CLK0 ~ CLK3
CS0
/CAS
DQM0 ~ 7
Vss
SCL
NC
Function
Select bank
Clock input
Chip select input
Column address strobe
DQM
Ground
Serial clock
No connection
URL:www.hbe.co.kr
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FUNCTIONAL BLOCK DIAGRAM
HSD4M64D4B
DQ0-63
CKE0
/CAS
CKE
CAS
RAS
CE
CKE
CAS
RAS
WE
U1
A0-A11 BA0-1
CLK
DQ0-15
DQM0
DQM1
CLK
DQ16-31
DQM2
CLKA
DQM0
DQM1
/RAS
/CS0
U2
WE
A0-A11 BA0-1
/CS2
CE
CKE
CAS
RAS
CE
DQM3
CLK
DQ32-47
DQM4
DQM2
DQM3
CLKC
DQM4
DQM5
U3
WE
A0-A11
BA0-1
DQM5
CKE
CAS
RAS
CE
WE
U4
A0-A11 BA0-1
CLK
DQ48-63
DQM6
DQM7
DQM6
DQM7
/WE
A0
–
A11
BA0-1
Vcc
Two 0.1uF Capacitors
per each SDRAM
Vss
PIN FUNCTION DESCRIPTION
Pin
CLK
/CE
Name
System clock
Chip enable
CLK, CKE and DQM
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
CKE
Clock enable
Disable input buffers for power down in standby.
CKE should be enabled 1CLK+tSS prior to valid command.
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Input Function
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
HANBit
HSD4M64D4B
Row/column addresses are multiplexed on the same pins.
A0 ~ A11
Address
Row address : RA0 ~ RA11, Column address : CA0 ~ CA8
Selects bank to be activated during row address latch time.
BA0 ~ BA1
Bank select address
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
/RAS
Row address strobe
Enables row access & precharge.
Column address
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
/CAS
strobe
/WE
Write enable
Latches data in starting from CAS, WE active.
Data input/output
DQM0 ~ 7
mask
DQ0 ~ 63
Vcc/Vss
supply/ground
Data input/output
Power
Blocks data input when DQM active. (Byte masking)
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Makes data output Hi-Z, tSHZ after the clock and masks the output.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
Storage Temperature
SYMBOL
V
IN ,OUT
Vcc
P
D
T
STG
RATING
-1V to 4.6V
-1V to 4.6V
4W
-55oC to 150oC
Short Circuit Output Current
I
OS
50mA
Notes:
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
DC OPERATING CONDITIONS
(Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C) )
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input leakage current
SYMBOL
Vcc
V
IH
V
IL
V
OH
V
OL
I
IL
MIN
3.0
2.0
-0.3
2.4
-4
-1.5
TYP.
3.3
3.0
0
-
-
-
MAX
3.6
Vcc+0.3
0.8
-
4
1.5
UNIT
V
V
V
V
V
uA
1
2
I
OH
= -2mA
I
OL
= 2mA
3
NOTE
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REV.1.0 (August.2002)
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HANBit
HSD4M64D4B
Notes :
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
(VCC = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V
±
200 mV)
DESCRIPTION
Clock
/RAS, /CAS,/WE,/CS, CKE, L(U)DQM
Address
DQ (DQ0 ~ DQ15)
SYMBOL
C
CLK
C
IN
C
ADD
C
OUT
MIN
15
30
30
5
MAX
25
40
40
15
UNITS
pF
pF
pF
pF
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
TEST
PARAMETER
SYMBOL
CONDITION
Burst length = 1
Operating current
(One bank active)
I
CC1
t
RC
≥
t
RC
(min)
I
O
= 0mA
I
CC2
P
CKE
≤
V
IL
(max)
t
CC
=10ns
CKE & CLK
≤
V
IL
(max)
t
CC
=∞
CKE
≥
V
IH
(min)
I
CC2
N
Precharge standby current in
one time during 20ns
non power-down mode
I
CC2
NS
CKE
≥
V
IH
(min)
CLK
≤
V
IL
(max),
t
CC
=∞
24
mA
CS*
≥
V
IH
(min),
t
CC
=10ns
48
4
mA
4
mA
300
280
280
mA
1
80
10
10L
VERSION
UNIT
NOTE
Precharge standby current in
power-down mode
I
CC2
PS
Input signals are changed
Input signals are stable
Active
standby
current in
I
CC3
P
I
CC3
PS
CKE
≤
V
IL
(max), t
CC
=10ns
CKE&CLK
≤
V
IL
(max)
t
CC
=∞
8
mA
8
power-down mode
URL:www.hbe.co.kr
REV.1.0 (August.2002)
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