HUR3060
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions TO-247AC
A
C(TAB)
C
A=Anode, C=Cathode, TAB=Cathode
A
C
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
1.5
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.49
Inches
Min.
Max.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
HUR3060
V
RSM
V
600
V
RRM
V
600
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
C
=25
o
C
mounting torque
typical
o
Test Conditions
T
C
=135 C; rectangular, d=0.5
T
VJ
=45
o
C; t
p
=10ms (50Hz), sine
T
VJ
=25
o
C; non-repetitive; I
AS
=1.3A; L=180uH
V
A
=1.5
.
V
R
typ.; f=10kHz; repetitive
Maximum Ratings
70
30
250
0.2
0.1
-55...+175
175
-55...+150
165
0.8...1.2
6
Unit
A
A
mJ
A
o
C
W
Nm
g
HUR3060
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol
T
VJ
=25
o
C; V
R
=V
RRM
T
VJ
=150
o
C; V
R
=V
RRM
I
F
=30A; T
VJ
=150
o
C
T
VJ
=25
o
C
Test Conditions
Characteristic Values
typ.
max.
250
1
1.25
1.60
0.9
0.25
Unit
uA
mA
V
K/W
ns
A
I
R
V
F
R
thJC
R
thCH
t
rr
I
RM
I
F
=1A; -di/dt=200A/us; V
R
=30V; T
VJ
=25
o
C
V
R
=100V; I
F
=50A; -di
F
/dt=100A/us; T
VJ
=100
o
C
35
6
FEATURES
* International standard package
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low I
RM
-values
* Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low
EMI/RFI
* Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
HUR3060
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
70
A
60
I
F
50
T
VJ
=150°C
3000
T = 100°C
nC
V
VJ
= 300V
R
2500
50
A
I
RM
40
T
VJ
= 100°C
V
R
= 300V
I
F
= 60A
I
F
= 30A
I
F
= 15A
Q
r
2000
1500
1000
I
F
= 60A
I
F
= 30A
I
F
= 15A
40
T
VJ
=100°C
30
30
20
T
VJ
=25°C
20
10
0
0.0
500
0
100
10
0
A/us 1000
-di
F
/dt
0
200
400
600 A/us 1000
800
-di
F
/dt
0.5
1.0
1.5
V
F
V2.0
Fig. 1 Forward current I
F
versus V
F
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
130
ns
120
T
VJ
= 100°C
V
R
= 300V
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
20
V
V
FR
t
fr
15
V
FR
2.0
1.2
us
t
fr
0.9
1.5
K
f
1.0
I
RM
t
rr
110
100
90
I
F
= 60A
I
F
= 30A
I
F
= 15A
10
0.6
0.5
Q
r
5
80
70
0
40
80
120 °C 160
T
VJ
0
200
400
600
-di
F
/dt
800
A/us 1000
0
0
200
400
T
VJ
= 100°C
I
F
= 30A
0.3
0.0
0.0
600 A/us 1000
800
di
F
/dt
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
1
K/W
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.465
0.179
0.256
t
i
(s)
0.0052
0.0003
0.0396
0.1
Z
thJC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
t
s
1
Fig. 7 Transient thermal resistance junction to case
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