HY57V283220(L)T(P)/ HY5V22(L)F(P)
4 Banks x 1M x 32Bit Synchronous DRAM
Revision History
Revision No.
0.1
History
Defined Preliminary Specification
1)
2)
3)
4)
5)
6)
Modified FBGA Ball Configuration Typo.
Changed Functional Block Diagram from A10 to A11.
Changed V
DD
min from 3.0V to 3.135V.
Changed Cap. Value from C11, 3, 5 to 4pf & C12, 3.8 to 4pf.
Insert t
AC2
Value.
Insdrt t
RAS
& CLK Value.
Remark
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Defined I
DD
Spec.
Delited Preliminary.
Changed I
DD
Spec.
133MHz Speed Added
Changed FBGA Package Size from 11x13 to 8x13.
1) Changed V
DD
min from 3.135V to 3.0V.
2) Changed V
IL
min from V
SSQ
-0.3V to -0.3V.
Modified of size erra. (Page15)
(Equation :
13.00
±
10
-> 13.00
±
0.10)
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.9 / July 2004
HY57V283220(L)T(P)/ HY5V22(L)F(P)
4 Banks x 1M x 32Bit Synchronous DRAM
DESCRIPTION
The Hynix HY57V283220(L)T(P) / HY5V22(L)F(P) is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the
memory applications which require wide data I/O and high bandwidth. HY57V283220(L)T(P) / HY5V22(L)F(P) is orga-
nized as 4banks of 1,048,576x32.
HY57V283220(L)T(P) / HY5V22(L)F(P) is offering fully synchronous operation referenced to a positive edge of the
clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally
pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write
cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count
sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate
command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined
design is not restricted by a `2N` rule.)
FEATURES
•
•
•
•
•
•
JEDEC standard 3.3V power supply
All device pins are compatible with LVTTL interface
86TSOP-II, 90Ball FBGA with 0.8mm of pin pitch
All inputs and outputs referenced to positive edge of
system clock
Data mask function by DQM0,1,2 and 3
•
Internal four banks operation
•
Burst Read Single Write operation
Programmable CAS Latency ; 2, 3 Clocks
•
•
•
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
ORDERING INFORMATION
Part No.
HY57V283220(L)T(P)-5
HY5V22(L)F(P)-5
HY57V283220(L)T(P)-55
HY5V22(L)F(P)-55
HY57V283220(L)T(P)-6
HY5V22(L)F(P)-6
HY57V283220(L)T(P)-7
HY5V22(L)F(P)-7
HY57V283220(L)T(P)-H
HY5V22(L)F(P)-H
HY57V283220(L)T(P)-8
HY5V22(L)F(P)-8
HY57V283220(L)T(P)-P
HY5V22(L)F(P)-P
HY57V283220(L)T(P)-S
HY5V22(L)F(P)-S
Clock Frequency
200MHz
183MHz
166MHz
143MHz
Organization
Interface
Package
4Banks x 1Mbits x32
133MHz
125MHz
100MHz
100MHz
LVTTL
86TSOP-II
90Ball FBGA
Note)
Hynix supports lead free part for each speed grade with same specification.
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.9 / July 2004
HY57V283220(L)T(P) / HY5V22(L)F(P)
PIN CONFIGURATION ( HY57V283220(L)T(P) Series)
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
NC
V
DD
DQM0
/W E
/C A S
/R A S
/C S
A11
BA0
BA1
A 1 0 /A P
A0
A1
A2
DQM2
V
DD
NC
D Q 16
V
SSQ
D Q 17
D Q 18
V
DDQ
D Q 19
D Q 20
V
SSQ
D Q 21
D Q 22
V
DDQ
D Q 23
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
V
SS
D Q 15
V
SSQ
D Q 14
D Q 13
V
DDQ
D Q 12
D Q 11
V
SSQ
D Q 10
DQ9
V
DDQ
DQ8
NC
V
SS
DQM1
NC
NC
C LK
CKE
A9
A8
A7
A6
A5
A4
A3
DQM3
V
SS
NC
D Q 31
V
DDQ
D Q 30
D Q 29
V
SSQ
D Q 28
D Q 27
V
DDQ
D Q 26
D Q 25
V
SSQ
D Q 24
V
SS
8 6 p in T S O P II
4 0 0 m il x 8 7 5 m i l
0 .5 m m p i n p i t c h
PIN DESCRIPTION
PIN
CLK
CKE
CS
BA0, BA1
A0 ~ A11
Clock
Clock Enable
Chip Select
Bank Address
Address
Row Address Strobe,
Column Address Strobe,
Write Enable
Data Input/Output Mask
Data Input/Output
Power Supply/Ground
Data Output Power/Ground
No Connection
PIN NAME
DESCRIPTION
The system clock input. All other inputs are registered to the SDRAM
on the rising edge of CLK.
Controls internal clock signal and when deactivated, the SDRAM will be one
of the states among power down, suspend or self refresh
Enables or disables all inputs except CLK, CKE and DQM
Selects bank to be activated during RAS activity
Selects bank to be read/written during CAS activity
Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA7
Auto-precharge flag : A10
RAS, CAS and WE define the operation
Refer function truth table for details
Controls output buffers in read mode and masks input data in write mode
Multiplexed data input / output pin
Power supply for internal circuits and input buffers
Power supply for output buffers
No connection
RAS, CAS, WE
DQM0~3
DQ0 ~ DQ31
V
DD
/V
SS
V
DDQ
/V
SSQ
NC
Rev. 0.9 / July 2004
3
HY57V283220(L)T(P) / HY5V22(L)F(P)
Ball CONFIGURATION ( HY5V22(L)F(P) Series)
1
A
DQ26
2
3
4
5
6
7
8
9
DQ24
VSS
VDD
DQ23
DQ21
B
DQ28
VDDQ
VSSQ
VDDQ
VSSQ
DQ19
C
VSSQ
DQ27
DQ25
DQ22
DQ20
VDDQ
D
VSSQ
DQ29
DQ30
DQ17
DQ18
VDDQ
E
VDDQ
DQ31
NC
NC
DQ16
VSSQ
F
VSS
DQM3
A3
A2
DQM2
VDD
G
A4
A5
A6
A10
A0
A1
H
A7
A8
NC
Top View
NC
BA1
A11
J
CLK
CKE
A9
BA0
/CS
/RAS
K
DQM1
NC
NC
/CAS
/WE
DQM0
L
VDDQ
DQ8
VSS
VDD
DQ7
VSSQ
M
VSSQ
DQ10
DQ9
DQ6
DQ5
VDDQ
N
VSSQ
DQ12
DQ14
DQ1
DQ3
VDDQ
P
DQ11
VDDQ
VSSQ
VDDQ
VSSQ
DQ4
R
DQ13
DQ15
VSS
VDD
DQ0
DQ2
Ball DESCRIPTION
PIN
CLK
CKE
CS
BA0, BA1
A0 ~ A11
Clock
Clock Enable
Chip Select
Bank Address
Address
Row Address Strobe,
Column Address Strobe, Write
Enable
Data Input/Output Mask
Data Input/Output
Power Supply/Ground
Data Output Power/Ground
No Connection
PIN NAME
DESCRIPTION
The system clock input. All other inputs are registered to the SDRAM on the rising edge
of CLK.
Controls internal clock signal and when deactivated, the SDRAM will be one of the states
among power down, suspend or self refresh
Enables or disables all inputs except CLK, CKE and DQM
Selects bank to be activated during RAS activity
Selects bank to be read/written during CAS activity
Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA7
Auto-precharge flag : A10
RAS, CAS and WE define the operation
Refer function truth table for details
Controls output buffers in read mode and masks input data in write mode
Multiplexed data input / output pin
Power supply for internal circuits and input buffers
Power supply for output buffers
No connection
RAS, CAS, WE
DQM0~3
DQ0 ~ DQ31
V
DD
/V
SS
V
DDQ
/V
SSQ
NC
Rev. 0.9 / July 2004
4
HY57V283220(L)T(P) / HY5V22(L)F(P)
FUNCTIONAL BLOCK DIAGRAM
1Mbit x 4banks x 32 I/O Synchronous DRAM
Self Refresh Logic
& Timer
Refresh
Counter
CLK
CKE
CS
RAS
CAS
WE
DQM0
DQM1
DQM2
DQM3
Row Active
1M
x32 Bank 3
Row
Pre
Decoder
1M x32 Bank 2
X decoder
X decoder
X decoder
X decoder
X decoder
X decoder
X decoder
1M x32 Bank 1
1M x32 Bank 0
DQ0
DQ1
I/O Buffer & Logic
I/O Buffer & Logic
Sense AMP & I/O Gate
State Machine
State Machine
Column
Active
X decoder
Memory
Cell
Array
Column
Pre
Decoder
DQ30
DQ31
Y decoder
Bank Select
Column Add
Counter
A0
A1
Address buffers
Address buffers
Address
Register
Burst
Counter
A11
BA0
BA1
Mode Register
CAS Latency
Data Out Control
Pipe Line Control
Rev. 0.9 / July 2004
5
t(p)-55_pdf/pg_0001.png)
汽车电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界t(p)-55_pdf/1.png)
t(p)-55_pdf/2.png)
t(p)-55_pdf/3.png)
t(p)-55_pdf/4.png)
t(p)-55_pdf/5.png)
t(p)-55_pdf/pg_0002.png)
t(p)-55_pdf/pg_0003.png)
t(p)-55_pdf/pg_0004.png)
t(p)-55_pdf/pg_0005.png)
