HY62V8400A Series
512Kx8bit CMOS SRAM
Document Title
512K x8 bit 3.3V Low Power CMOS slow SRAM
Revision History
Revision No
03
History
Revision History Insert
Revised
- Improved standby current
Isb1 : 30uA
¡ æ
0uA
2
Revised
- Change Iccdr Value : 15uA => 20uA
Marking Information Add
Revised
-
E.T (-25~85°C), I.T (-40~85°C) Part Insert
-
AC Test Condition Add : 5pF Test Load
-
V
IH
max : Vcc + 0.2V => Vcc + 0.3V
-
V
IL
min : - 0.2V => - 0.3V
Changed Logo
- HYUNDAI -> hynix
- Marking Information Change
Draft Date
Jul.06.2000
Remark
Final
04
05
Aug.04.2000
Dec.04.2000
Final
Final
06
Apr.30.2001
Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 06 / Apr. 2001
Hynix Semiconductor
HY62V8400A Series
DESCRIPTION
The HY62V8400A is a high-speed, low power and
4M bits CMOS SRAM organized as 512K words
by 8 bits. The HY62V8400A uses Hynix's high
performance twin tub CMOS process technology
and was designed for high-speed and low power
circuit technology. It is particularly well suited for
use in high-density and low power system
applications. This device has a data retention
mode that guarantees data to remain valid at the
minimum power supply voltage of 2.0V.
Product
Voltage
Speed
No.
(V)
(ns)
HY62V8400A
3.0~3.6 70/85/100
HY62V8400A-E 3.0~3.6 70/85/100
HY62V8400A-I
3.0~3.6 70/85/100
Note 1. Current value is max.
FEATURES
•
•
•
•
Fully static operation and Tri-state outputs
TTL compatible inputs and outputs
Low power consumption
Battery backup(LL-part)
-. 2.0V(min) data retention
•
Standard pin configuration
-. 32pin 525mil SOP
-. 32pin 400mil TSOP-II
(Standard and Reversed)
Standby Current(uA)
LL
20
30
30
Temperature
(°C)
0~70
-25~70
-40~70
Operation
Current/Icc(mA)
5
5
5
PIN CONNECTION
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
A17
/WE
A13
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
A17
/WE
A13
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
Vcc
A15
A17
/WE
A13
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
SOP
TSOP-II(Standard)
TSOP-II(Reversed)
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
A0 ~ A18
I/O1 ~ I/O8
Vcc
Vss
Pin Function
Chip Select
Write Enable
Output Enable
Address Input
Data Input/Output
Power(3.0~3.6V)
Ground
A0
BLOCK DIAGRAM
ROW DECODER
I/O1
SENSE AMP
ADD INPUT BUFFER
COLUMN DECODER
DATA I/O
BUFFER
MEMORY ARRAY
512Kx 8
WRITE DRIVER
I/O8
A18
/CS
/OE
/WE
CONTROL
LOGIC
Rev 06 / Apr. 2001
2
HY62V8400A Series
ORDERING INFORMATION
Part No.
HY62V8400ALLG
HY62V8400ALLG-E
HY62V8400ALLG-I
HY62V8400ALLT2
HY62V8400ALLT2-E
HY62V8400ALLT2-I
HY62V8400ALLR2
HY62V8400ALLR2-E
HY62V8400ALLR2-I
Speed
70/85/100
70/85/100
70/85/100
70/85/100
70/85/100
70/85/100
70/85/100
70/85/100
70/85/100
Power
LL-part
LL-part
LL-part
LL-part
LL-part
LL-part
LL-part
LL-part
LL-part
Temp
0~70
°C
-25~85
°C
-40~85
°C
0~70
°C
-25~85
°C
-40~85
°C
0~70
°C
-25~85
°C
-40~85
°C
Package
SOP
SOP
SOP
TSOP-II (Standard)
TSOP-II (Standard)
TSOP-II (Standard)
TSOP-II (Reversed)
TSOP-II (Reversed)
TSOP-II (Reversed)
ABSOLUTE MAXIMUM RATING (1)
Symbol
Vcc, V
IN,
V
OUT
T
A
Parameter
Power Supply, Input/Output Voltage
Operating Temperature
HY62V8400A
HY62V8400A-E
HY62V8400A-I
Storage Temperature
Power Dissipation
Data Output Current
Lead Soldering Temperature & Time
Rating
-0.5 to 4.0
0 to 70
-25 to 85
-40 to 85
-65 to 150
1.0
50
260
•10
Unit
V
°C
°C
°C
°C
W
MA
°C•sec
T
STG
P
D
I
OUT
T
SOLDER
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliablity.
TRUTH TABLE
/CS
H
L
L
L
/WE
X
H
H
L
/OE
X
H
L
X
MODE
Deselected
Output Disabled
Read
Write
I/O OPERATION
High-Z
High-Z
Data Out
Data In
Power
Standby
Active
Active
Active
Note :
1. H=V
IH
, L=V
IL
, X=don't care (V
IH
or V
IL
)
Rev 06 / Apr. 2001
2
HY62V8400A Series
RECOMMENDED DC OPERATING CONDITION
T
A
= 0¡
É
70¡
É
Normal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial), unless otherwise specified.
to
(
Symbol
Parameter
Min.
Typ.
Max.
Unit
Vcc
Supply Voltage
3.0
3.3
3.6
V
Vss
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
-
Vcc+0.3
V
V
IL
Input Low Voltage
-0.3
(1)
-
0.4
V
Note :
1. V
IL
= -1.5V for pulse width less than 30ns and not 100% tested.
DC ELECTRICAL CHARACTERISTICS
T
A
= 0¡
É
70¡
É
Normal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial), unless otherwise specified.
to
(
Symbol
Parameter
Test Condition
Min Typ Max Unit
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
-1
-
1
uA
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS = V
IH
or
-1
-
1
uA
/
OE
=
V
IH
or /WE = V
IL
Icc
Operating Power Supply
/CS = V
IL
,
-
5
mA
Current
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
-
40
mA
I
CC1
Average Operating Current
/CS = V
IL
Min Duty Cycle = 100%,
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
I
SB
TTL Standby Current
/CS = V
IH ,
-
0.5
mA
(TTL Input)
V
IN
= V
IH
or V
IL
Standby Current
I
SB1
/CS > Vcc - 0.2V,
LL
-
-
20
uA
(CMOS Input)
V
IN
> Vcc - 0.2V or
LL-E/I
-
-
30
uA
V
IN
< Vss + 0.2V
V
OL
Output Low Voltage
I
OL
= 2.1mA
-
-
0.4
V
V
OH
Output High Voltage
I
OH =
-1mA
2.2
-
-
V
Note : Typical values are at Vcc = 3.3V, T
A
= 25°C
CAPACITANCE
Temp = 25°C, f= 1.0MHz
Symbol
Parameter
C
IN
Input Capacitance
C
OUT
Output Capacitance
Condition
V
IN
= 0V
V
I/O
= 0V
Max.
6
8
Unit
pF
pF
Note : This parameter is sampled and not 100% tested
Rev 06 / Apr. 2001
3
HY62V8400A Series
AC CHARACTERISTICS
T
A
= 0¡
É
70¡
É
Normal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial), unless otherwise specified.
to
(
70ns
85ns
100ns
# Symbol
Parameter
Unit
Min.
Max. Min.
Max. Min
Max.
READ CYCLE
1
tRC
Read Cycle Time
70
-
85
-
100
-
ns
2
tAA
Address Access Time
-
70
-
85
-
100
ns
3
tACS
Chip Select Access Time
-
70
-
85
-
100
ns
4
tOE
Output Enable to Output Valid
-
40
-
45
-
50
ns
5
tCLZ
Chip Select to Output in Low Z
10
-
10
-
10
-
ns
6
tOLZ
Output Enable to Output in Low Z
5
-
5
-
5
-
ns
7
tCHZ
Chip Deselecting to Output in High Z
0
25
0
30
0
30
ns
8
tOHZ
Out Disable to Output in High Z
0
25
0
30
0
30
ns
9
tOH
Output Hold from Address Change
15
-
15
-
15
-
ns
WRITE CYCLE
10 tWC
Write Cycle Time
70
-
85
-
100
-
ns
11 tCW
Chip Selection to End of Write
60
-
70
-
80
-
ns
12 tAW
Address Valid to End of Write
60
-
70
-
80
-
ns
13 tAS
Address Set-up Time
0
-
0
-
0
-
ns
14 tWP
Write Pulse Width
50
-
60
-
70
-
ns
15 tWR
Write Recovery Time
0
-
0
-
0
-
ns
16 tWHZ
Write to Output in High Z
0
25
0
30
0
30
ns
17 tDW
Data to Write Time Overlap
30
-
35
-
40
-
ns
18 tDH
Data Hold from Write Time
0
-
0
-
0
-
ns
19 tOW
Output Active from End of Write
5
-
5
-
5
-
ns
AC TEST CONDITIONS
T
A
= 0¡
É
70¡
É
Normal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial), unless otherwise specified.
to
(
Parameter
Value
Input Pulse Level
0.4V to 2.2V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
Output Load
tCLZ,tOLZ,tCHZ,tOHZ,tWHZ
CL = 5pF + 1TTL Load
Others
CL = 100pF + 1TTL Load
AC TEST LOADS
TTL
CL(1)
Note
1. Including jig and scope capacitance
Rev 06 / Apr. 2001
4
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