HIGH-SPEED
4K x 9DUAL-PORT
STATIC RAM
Features:
x
x
IDT7014S
Description:
The IDT7014 is a high-speed 4K x 9 Dual-Port Static RAM designed
to be used in systems where on-chip hardware port arbitration is not
needed. This part lends itself to high-speed applications which do not rely
on BUSY signals to manage simultaneous access.
The IDT7014 provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. See functional description.
The IDT7014 utilitizes a 9-bit wide data path to allow for parity at the
user's option. This feature is especially useful in data communication
applications where it is necessary to use a parity bit for transmission/
reception error checking.
Fabricated using IDT’s high-performance technology, these Dual-
Ports typically operate on only 750mW of power at maximum access times
as fast as 12ns.
The IDT7014 is packaged in a 52-pin PLCC and a 64-pin thin quad
flatpack, (TQFP).
x
x
x
x
x
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
High-speed access
– Commercial: 12/15/20/25ns (max.)
– Industrial: 15/20/25ns (max.)
Standard-power operation
– IDT7014S
Active: 750mW (typ.)
Fully asynchronous operation from either port
TTL-compatible; single 5V (±10%) power supply
Available in 52-pin PLCC and a 64-pin TQFP
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Functional Block Diagram
R/
W
L
R/
W
R
OE
L
I/O
0L
- I/O
8L
I/O
CONTROL
I/O
CONTROL
OE
R
I/O
0R
- I/O
8R
A
0L
- A
11L
ADDRESS
DECODER
MEMORY
ARRAY
ADDRESS
DECODER
A
0R
- A
11R
2528 drw 01
MARCH 2000
1
©2000 Integrated Device Technology, Inc.
DSC 2528/13
IDT7014S
High-Speed 4K x 9 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
INDEX
A
6L
A
7L
A
8L
A
9L
A
10L
A
11L
OE
L
V
CC
R/
W
L
GND
I/O
8L
I/O
7L
I/O
6L
7 6 5 4 3 2
52 51 50 49 48 47
1
46
8
45
9
10
44
43
11
42
12
IDT 7014J
41
13
J52-1
(4)
40
14
39
15
52-Pin PLCC
38
16
Top View
(5)
37
17
36
18
35
19
20
34
21 22 23 24 25 26 27 28 29 30 31 32 33
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
A
9R
A
10R
A
11R
OE
R
GND
R/
W
R
GND
I/O
8R
I/O
7R
I/O
6R
I/O
5R
Pin Configuration
(1,2,3)
I/O
5L
V
CC
I/O
4L
I/O
3L
I/O
2L
I/O
1L
I/O
0L
I/O
0R
I/O
1R
I/O
2R
I/O
3R
V
CC
I/O
4R
,
2528 drw 02
INDEX
A
6L
A
7L
A
8L
A
9L
A
10L
A
11L
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
N/C
N/C
N/C
N/C
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
OE
L
N/C
V
CC
N/C
R/
W
L
N/C
GND
I/O
8L
I/O
7L
I/O
6L
A
6R
A
7R
A
8R
A
9R
A
10R
A
11R
IDT7014PF
PN64-1
(4)
64-Pin TQFP
Top View
(5)
OE
R
N/C
GND
N/C
R/
W
R
N/C
GND
I/O
8R
I/O
7R
I/O
6R
NOTES:
1. All V
CC
pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. J52-1 package body is approximately .75 in x .75 in. x .17 in.
PN64-1 package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate the orientation of the actual part-marking
I/O
5L
V
CC
I/O
4L
I/O
3L
I/O
2L
I/O
1L
I/O
0L
GND
GND
I/O
0R
I/O
1R
I/O
2R
I/O
3R
V
CC
I/O
4R
I/O
5R
2
2528 drw 03
IDT7014S/L
High-Speed 4K x 9 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
Rating
Terminal Voltage
with Respect
to GND
Terminal Voltage
Temperature
Under Bias
Storage
Temperature
DC Output
Current
Commercial
& Industrial
-0.5 to +7.0
Unit
V
Maximum Operating Temperature
and Supply Voltage
(1,2)
Grade
Commercial
Ambient
Temperature
0
O
C to +70
O
C
-40
O
C to +85
O
C
GND
0V
0V
Vcc
5.0V
+
10%
5.0V
+
10%
2528 tbl 02
V
TERM
(2)
T
BIAS
T
STG
I
OUT
-0.5 to +V
CC
-55 to +125
-55 to +125
50
V
o
Industrial
C
C
NOTES:
1. This is the parameter T
A
.
o
mA
2528 tbl 01
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V
TERM
> Vcc + 10%.
Recommended DC Operating
Conditions
Symbol
V
CC
GND
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
-0.5
(1)
Typ.
5.0
0
____
Max.
5.5
0
6.0
(2)
0.8
Unit
V
V
V
V
2528 tbl 03
____
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 10%.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(1)
(V
CC
= 5.0V ± 10%)
7014S
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V
CC
= 5.5V, V
IN
= 0V to V
CC
V
OUT
= 0V to V
CC
I
OL
= +4mA
I
OH
= -4mA
Min.
___
___
___
Max.
10
10
0.4
___
Unit
µA
µA
V
V
2528 tbl 04
2.4
NOTE:
1. At V
CC
< 2.0V input leakages are undefined.
3
6.42
IDT7014S
High-Speed 4K x 9 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (V
CC
= 5V ± 10%)
7014S12
Com'l Only
Symbol
I
CC
Parameter
Dynamic Operating
Current
(Both Ports Active)
Test Condition
Outputs Open
f = f
MAX
(1)
Version
COM'L
IND
S
S
Typ.
160
____
7014S15
Com'l & Ind
Typ.
160
160
Max
250
260
2528 tbl 05a
Max
250
____
Unit
mA
7014S20
Com'l & Ind
Symbol
I
CC
Parameter
Dynamic Operating
Current
(Both Ports Active)
Test Condition
Outputs Open
f = f
MAX
(1)
Version
COM'L
IND
S
S
Typ.
155
155
Max
245
260
7014S25
Com'l & Ind
Typ.
150
150
Max.
240
255
2528 tbl 05b
Unit
mA
NOTES:
1. At f = fmax, address inputs are cycling at the maximum read cycle of 1/t
RC
using the "AC Test Conditions" input levels of GND to 3V.
AC Test Conditions
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns Max.
1.5V
1.5V
Figures 1,2 and 3
2528 tbl 06
5V
893Ω
DATA
OUT
347Ω
30pF
DATA
OUT
347Ω
5V
893Ω
5pF*
2528 drw 04
2528 drw 05
Figure 1. AC Output Test Load.
Capacitance
(1)
Symbol
C
IN
C
OUT
Figure 2. Output Test Load
(for t
HZ
, t
WZ
, and t
OW
)
*Including scope and jig.
Conditions
(2)
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
2528 tbl 07
(T
A
= +25°C, f = 1.0MHz) TQFP Package Only
Parameter
Input Capacitance
Output Capacitance
8
7
6
- 10pF is the I/O capacitance
of this device, and 30pF is the
AC Test Load Capacitance
NOTES:
1. This parameter is determined by device characteristics but is not production
tested.
2. 3dv references the interpolated capacitance when the input and output signals
swith from 0V to 3V or from 3V to 0V.
t
AA
(Typical, ns)
5
4
3
2
1
0
-1
20 40 60 80 100 120 140 160 180 200
Capacitance (pF)
2528 drw 06
,
Figure 3. Typical Output Derating (Lumped Capacitive Load).
4
IDT7014S/L
High-Speed 4K x 9 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage
7014S12
Com'l Only
Symbol
READ CYCLE
t
RC
t
AA
t
AOE
t
OH
t
LZ
t
HZ
Read Cycle Time
Address Access Time
Output Enable Access Time
Output Hold from Address Change
Output Low-Z Time
(1,2)
Output High-Z Time
(1,2)
12
____
____
____
7014S15
Com'l & Ind
Min.
Max.
Unit
Parameter
Min.
Max.
15
____
____
____
ns
ns
ns
ns
ns
ns
2528 tbl 08a
12
8
____
____
15
8
____
____
3
3
____
3
3
____
7
7
7014S20
Com'l & Ind
Symbol
READ CYCLE
t
RC
t
AA
t
AOE
t
OH
t
LZ
t
HZ
Read Cycle Time
Address Access Time
Output Enable Access Time
Output Hold from Address Change
Output Low-Z Time
(1,2)
Output High-Z Time
(1,2)
20
____
____
____
7014S25
Com'l & Ind
Min.
Max.
Unit
Parameter
Min.
Max.
25
____
____
____
ns
ns
ns
ns
ns
ns
2528 tbl 08b
20
10
____
____
25
12
____
____
3
3
____
3
3
____
9
11
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is determined by device characterization, but is not production tested.
5
6.42
MEMS传感器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
