HCF40109B
QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER
s
s
s
s
s
s
s
s
s
INDIPENDENCE OF POWER SUPPLY
SEQUENCE CONSIDERATIONS - V
CC
CAN
EXCEED V
DD,
INPUT SIGNALS CAN
EXCEED BOTH V
CC
AND V
DD
UP AND DOWN LEVEL SHIFTING
CAPABILITY
THREE-STATE OUTPUTS WITH SEPARATE
ENABLE CONTROLS
STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
QUIESCENT CURRENT SPECIFIED UP TO
20V
5V, 10V, AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25°C
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B "STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DIP
SOP
ORDER CODES
PACKAGE
DIP
SOP
TUBE
HCF40109BEY
HCF40109BM1
DESCRIPTION
HCF40109B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
HCF40109B contains four low-to-high voltage
level shifting circuits. Each circuit will shift a
low-voltage digital-logic input signal (A, B, C, D)
with logical 1 = V
CC
and logical 0 = V
SS
to a higher
voltage output signal (E, F, G, H) with logical 1 =
V
DD
and logical 0 = V
SS
. HCF40109B, unlike other
PIN CONNECTION
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od
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low-to-high level-shifting circuits, does not require
the presence of the high voltage supply (V
DD)
before the application of either the low-voltage
supply (V
CC
) or the input signals. There are no
restrictions on the sequence of application of V
DD
,
V
CC
, or the input signals. In addition, there are no
restrictions on the relative magnitudes of the
supply voltages or input signals within the device
maximum ratings; V
CC
may exceed V
DD
, and
input signals may exceed V
CC
and V
DD
. When
operated in the mode V
CC
V
DD
, HCF40109B will
operate as a high-to-low level-shifter. HCF40109B
also features individual three-state output
capability. A low level on any of the separately
enabled three-state output controls produces a
high-impedance state in the corresponding output.
et
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o
P
e
od
r
HCF40109M013TR
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uc
T&R
May 2003
1/10
微控制器 MCU
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