* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72417
S-70316-Rev. D, 12-Feb-07
www.vishay.com
1
t
≤
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
29
67
13
Maximum
35
80
16
°C/W
Unit
Si4336DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
F
= 2.9 A, di/dt = 100 A/µs
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
0.8
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
5600
860
415
36
18
10
1.3
24
16
90
32
45
2.0
35
25
140
50
70
ns
Ω
50
nC
pF
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 25 A
V
GS
= 4.5 V, I
D
= 22 A
V
DS
= 15 V, I
D
= 25 A
I
S
= 2.9 A, V
GS
= 0 V
30
0.0026
0.0033
110
0.72
1.1
0.00325
0.0042
1.0
3.0
± 100
1
5
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min
Typ
Max
Unit
t
rr
Source-Drain Reverse Recovery Time
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
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