VS-HFA25TB60SPbF
www.vishay.com
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 25 A
FEATURES
Ultrafast and ultrasoft recovery
Very low I
RRM
and Q
rr
Specified at operating conditions
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
•
•
•
•
TO-263AB (D
2
PAK)
Base
cathode
2
BENEFITS
•
•
•
•
•
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
1
N/C
3
Anode
DESCRIPTION
VS-HFA25TB60S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A continuous current, the
VS-HFA25TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the
t
b
portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA25TB60S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
TO-263AB (D
2
PAK)
25 A
600 V
1.3 V
23 ns
150 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
25
225
100
125
50
-55 to +150
W
°C
A
UNITS
V
Revision: 26-Feb-16
Document Number: 94066
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA25TB60SPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
V
BR
I
R
= 100 μA
I
F
= 25 A
Maximum forward voltage
V
FM
I
F
= 50 A
I
F
= 25 A, T
J
= 125 °C
Maximum reverse
leakage current
Junction capacitance
Series inductance
I
RM
C
T
L
S
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
V
R
= 200 V
See fig. 2
See fig. 3
See fig. 1
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.3
1.5
1.3
1.5
600
55
8.0
MAX.
-
1.7
2.0
1.7
20
2000
100
-
μA
pF
nH
V
UNITS
Measured lead to lead 5 mm from package body
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall recovery
current during t
b
See fig. 8
SYMBOL
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
dI
(rec)M
/dt1
dI
(rec)M
/dt2
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 25 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
23
50
105
4.5
8.0
112
420
250
160
MAX.
-
75
160
10
15
375
1200
-
A/μs
-
A
ns
UNITS
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Weight
Marking device
Case style TO-263AB (D
2
PAK)
SYMBOL
T
lead
R
thJC
R
thJA
Typical socket mount
TEST CONDITIONS
0.063" from case (1.6 mm) for 10 s
MIN.
-
-
-
-
-
TYP.
-
-
-
2.0
0.07
MAX.
300
1.0
K/W
80
-
-
g
oz.
UNITS
°C
HFA25TB60S
Revision: 26-Feb-16
Document Number: 94066
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA25TB60SPbF
www.vishay.com
I
F
- Instantaneous Forward Current (A)
Vishay Semiconductors
10 000
T
J
= 150 °C
100
I
R
- Reverse Current (μA)
1000
100
10
1
0.1
0.01
T
J
= 25 °C
T
J
= 125 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.6
1.0
1.4
1.8
2.2
2.6
0
100
200
300
400
500
600
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
1000
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
10
1
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Response
1
P
DM
t
1
t
2
0.1
Single
pulse
(thermal response)
0.01
0.00001
0.0001
0.001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 26-Feb-16
Document Number: 94066
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA25TB60SPbF
www.vishay.com
140
120
100
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
1400
1200
1000
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 50 A
I
F
= 25 A
I
F
= 10 A
Vishay Semiconductors
Q
rr
(nC)
t
rr
(ns)
800
600
400
200
0
100
80
60
40
I
F
= 50 A
I
F
= 25 A
I
F
= 10 A
20
100
1000
1000
dI
F
/dt (A/μs)
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
30
25
20
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 50 A
I
F
= 25 A
I
F
= 10 A
10 000
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
dI
(rec)M
/dt (A/μs)
I
rr
(A)
15
10
5
0
100
1000
I
F
= 50 A
I
F
= 25 A
I
F
= 10 A
1000
100
100
1000
dI
F
/dt (A/μs)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt
Revision: 26-Feb-16
Document Number: 94066
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA25TB60SPbF
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 26-Feb-16
Document Number: 94066
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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