Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | ON Semiconductor(安森美) |
| 零件包装代码 | SC-88 |
| 包装说明 | CASE 419B-02, SC-70, SC-88, 6 PIN |
| 针数 | 6 |
| 制造商包装代码 | CASE 419B-02 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 15 |
| JESD-30 代码 | R-PDSO-G6 |
| JESD-609代码 | e0 |
| 湿度敏感等级 | 1 |
| 元件数量 | 2 |
| 端子数量 | 6 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 240 |
| 极性/信道类型 | PNP |
| 最大功率耗散 (Abs) | 0.15 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 30 |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| MUN5132DW1T1 | NSBA143EDP6T5G | MUN5132DW1T1G | NSBA124EDXV6T1G | |
|---|---|---|---|---|
| 描述 | Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP | Bipolar Transistors - Pre-Biased DUAL PBRT | Bipolar Transistors - Pre-Biased SS SC88 BR XSTR PNP 50V | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP |
| 厂商名称 | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) |
| 包装说明 | CASE 419B-02, SC-70, SC-88, 6 PIN | SMALL OUTLINE, R-PDSO-F6 | SMALL OUTLINE, R-PDSO-G6 | CASE 463A-01, 6 PIN |
| 针数 | 6 | 6 | 6 | 6 |
| 制造商包装代码 | CASE 419B-02 | 527AD | 419B-02 | 463A-01 |
| Reach Compliance Code | not_compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT IN BIAS RESISTOR RATIO IS 1 |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 15 | 15 | 15 | 60 |
| JESD-30 代码 | R-PDSO-G6 | R-PDSO-F6 | R-PDSO-G6 | R-PDSO-F6 |
| JESD-609代码 | e0 | e3 | e3 | e3 |
| 湿度敏感等级 | 1 | 1 | 1 | 1 |
| 元件数量 | 2 | 2 | 2 | 2 |
| 端子数量 | 6 | 6 | 6 | 6 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 240 | NOT SPECIFIED | 260 | NOT SPECIFIED |
| 极性/信道类型 | PNP | PNP | PNP | PNP |
| 最大功率耗散 (Abs) | 0.15 W | 0.408 W | 0.15 W | 0.5 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin (Sn) | Tin (Sn) | Tin (Sn) |
| 端子形式 | GULL WING | FLAT | GULL WING | FLAT |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 30 | NOT SPECIFIED | 40 | NOT SPECIFIED |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | - |
| Brand Name | - | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| 是否无铅 | - | 不含铅 | 不含铅 | 不含铅 |
| Factory Lead Time | - | 8 weeks | 8 weeks | 17 weeks |
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