SST12LN01
2.4-2.5 GHz WLAN Low-Noise Amplifier
Features
• Gain:
– Typically 13.5 dB gain across 2.4–2.5 GHz
1.0
PRODUCT DESCRIPTION
• Noise Figure:
– Typically 1.5 dB across 2.4–2.5 GHz
SST12LN01 is a cost effective Low-Noise Amplifier
(LNA) which requires no external RF-matching compo-
nents. This device is based on the GaAs pHEMT tech-
nology, and complies with 802.11 b/g applications.
SST12LN01 provides high-performance, low-noise,
and moderate-gain operation within the 2.4–2.5 GHz
frequency band. Across this frequency band, the LNA
typically provides 13.5 dB gain and 1.5 dB noise figure.
This LNA cell is designed with a self DC-biasing
scheme, which maintains low DC current consumption,
nominally at 10 mA, during operation. Optimum perfor-
mance is achieved with only a single power supply, and
no external bias resistors or networks are required. The
input and output ports are single-ended 50 matched.
RF ports are also DC isolated requiring no DC blocking
capacitors or matching components.
SST12LN01 is offered in a 6-contact UQFN package.
See
Figure 3-1
for pin assignments and
Table 4-1
for
pin descriptions.
• P1dB:
– Typically -5dBm with V
DD
3.3V
• Low-Current Consumption
– 10 mA across 2.4–2.5 GHz
• 50 Input/Output Matched
• Packages available
– 6-contact UQFN – 3 mm x 1.6 mm
• All non-Pb (lead-free) devices are RoHS
compliant
Applications
• WLAN
• Bluetooth
• Wireless Network
2015 Microchip Technology Inc.
DS70005150A-page 1
SST12LN01
2.0
FUNCTIONAL BLOCKS
FUNCTIONAL BLOCK DIAGRAM
FIGURE 2-1:
3.0
PIN ASSIGNMENTS
PIN ASSIGNMENTS FOR 16-CONTACT UQFN
FIGURE 3-1:
Top View
(contacts facing down)
V
DD
NC
RF
IN
1
2
3
NC
1329 6-uqfn P1.0
6
RF and DC GND
0
5
4
RF
OUT
NC
4.0
PIN DESCRIPTIONS
PIN DESCRIPTION
Pin No.
0
1
2
3
4
5
6
Power Supply
No Connection
No Connection
O
PWR
Pin Name
Ground
No Connection
I
Unconnected pin
2.4G RF input
Unconnected pin
Unconnected pin
2.4G RF output
Type
1
Function
TABLE 4-1:
Symbol
GND
NC
RFIN
NC
NC
RFOUT
VDD
1. I=Input, O=Output
DS70005150A-page 2
2015 Microchip Technology Inc.
SST12LN01
5.0
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier
interface signals. Refer to
Table 5-2
for the DC voltage
and current specifications. Refer to
Figure 6-1
for the
RF performance.
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under “Absolute Maxi-
mum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and func-
tional operation of the device at these conditions or conditions greater than those defined in the operational
sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may
affect device reliability.)
Input power to pin 2 (P
IN
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 dBm
Average output power (P
OUT
)
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 dBm
Supply Voltage at pin 6 (V
DD
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V
DC supply current (I
DD
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 mA
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the maximum
rating of average output power could cause permanent damage to the device.
TABLE 5-1:
Range
Extended
OPERATING RANGE
Ambient Temp
-20°C to +85°C
V
DD
2.4–3.6V
TABLE 5-2:
Symbol
V
DD
I
DD
DC ELECTRICAL CHARACTERISTICS
Parameter
Supply Voltage at pin 6
Supply Current 2.4
–
2.5 GHz
Min.
Typ
3.3
10
Max.
Unit
V
mA
TABLE 5-3:
Symbol
F
L-U
G
NF
IP1dB
AC ELECTRICAL CHARACTERISTICS FOR CONFIGURATION, V
DD
=3.3V
Parameter
Frequency range
Small signal gain, 2.4
–
2.5 GHz
Noise Figure, 2.4
–
2.5 GHz
Input 1 dB compression point
Min.
2400
13.5
1.5
-5
Typ
Max.
2500
Unit
MHz
dB
dB
dBm
2015 Microchip Technology Inc.
DS70005150A-page 3
SST12LN01
6.0
TYPICAL PERFORMANCE CHARACTERISTICS
Test Conditions: V
DD
= 3.3V, T
A
= 25°C, unless otherwise specified
FIGURE 6-1:
S-PARAMETERS
DS70005150A-page 4
2015 Microchip Technology Inc.
SST12LN01
FIGURE 6-2:
NOISE FIGURE VERSUS FREQUENCY
FIGURE 6-3:
20.00
FREQUENCY RESPONSE OF GAIN (S21) FOR THREE TEMPERATURES
Temp: 25 degree
Temp: 80 degree
15.00
Temp: -10 degree
-
10.00
Gain, dB
5.00
0.00
-5.00
-10.00
1
2
3
4
Frequency, GHz
1329 F7.0
2015 Microchip Technology Inc.
DS70005150A-page 5
测试/测量
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