Freescale Semiconductor
Technical Data
Document Number: MRF7S38075H
Rev. 0, 8/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
•
Typical WiMAX Performance: V
DD
= 30 Volts, I
DQ
= 900 mA, P
out
=
12 Watts Avg., f = 3400 and 3600 MHz, 802.16d, 64 QAM
3
/
4
, 4 bursts, 7
MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 14 dB
Drain Efficiency — 14%
Device Output Signal PAR — 8.7 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 75 Watts CW
Peak Tuned Output Power
•
P
out
@ 1 dB Compression Point
w
75 Watts CW
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S38075HR3
MRF7S38075HSR3
3400 - 3600 MHz, 12 W AVG., 30 V
WiMAX
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF7S38075HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S38075HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 86°C, 74 W CW
Case Temperature 69°C, 12 W CW
Symbol
R
θJC
Value
(2,3)
0.46
0.49
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF7S38075HR3 MRF7S38075HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 248
μAdc)
Gate Quiescent Voltage
(V
DD
= 30 Vdc, I
D
= 900 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.3 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
0.77
464
214
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
2
0.1
2
2.7
0.21
2.7
3.5
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 900 mA, P
out
= 12 W Avg., f = 3400 MHz and f =
3600 MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM
3
/
4
, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 0.5 MHz Channel Bandwidth @
±5.25
MHz Offset.
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(continued)
G
ps
η
D
PAR
ACPR
IRL
12
12
7.5
—
—
14
14
8.7
- 49
- 12
17
24
—
- 46
-5
dB
%
dB
dBc
dB
MRF7S38075HR3 MRF7S38075HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances OFDM Signal
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 900 mA, P
out
= 12 W Avg.,
f = 3400 MHz and f = 3600 MHz, WiMAX Signal, OFDM Single - Carrier, 7 MHz Channel Bandwidth, 64 QAM
3
/
4
, 4 Bursts, PAR = 9.5 dB @
0.01% Probability on CCDF.
Mask System Type G @ P
out
= 32 W Avg.
Mask
Point B at 3.5 MHz Offset
Point C at 5 MHz Offset
Point D at 7.4 MHz Offset
Point E at 14 MHz Offset
Point F at 17.5 MHz Offset
RCE
EVM
—
—
—
—
—
—
—
- 27
- 38
- 42
- 60
- 60
- 34
2.1
—
—
—
—
—
—
—
dB
% rms
dBc
Relative Constellation Error @ P
out
= 12 W Avg.
(1)
Error Vector Magnitude
(1)
(Typical EVM Performance @ P
out
= 12 W Avg. with OFDM 802.16d
Signal Call)
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 900 mA, 3400 - 3600 MHz Bandwidth
Video Bandwidth @ 84 W PEP P
out
where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3
= IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 200 MHz Bandwidth @ P
out
= 12 W Avg.
Average Deviation from Linear Phase in 200 MHz Bandwidth
@ P
out
= 75 W CW
Average Group Delay @ P
out
= 75 W CW, f = 3500 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 75 W CW,
f = 3500 MHz, Six Sigma Window
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
1. RCE = 20Log(EVM/100)
VBW
—
20
—
MHz
G
F
Φ
Delay
ΔΦ
ΔG
ΔP1dB
—
—
—
—
—
—
0.36
3.21
2.38
63.4
0.025
0.026
—
—
—
—
—
—
dB
°
ns
°
dB/°C
dBm/°C
MRF7S38075HR3 MRF7S38075HSR3
RF Device Data
Freescale Semiconductor
3
B2
V
BIAS
+
C5
C12
R1
B1
Z13 Z12
+
C6
C7
C8
C9
+
C10
+
C11
V
SUPPLY
C3
C2
Z11
Z14
Z15
Z16
Z17
Z18
Z19
Z20
C4
Z21
Z22
RF
OUTPUT
RF
INPUT Z1
Z2
Z3
Z4
Z5
C1
Z6
Z7
Z8
Z9
Z10
DUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
0.427″ x 0.084” Microstrip
0.066″ x 0.192″ x 0.084″ Taper
0.045″ x 0.192″ Microstrip
0.044″ x 0.310″ Microstrip
0.150″ x 0.430″ Microstrip
0.107″ x 0.240″ Microstrip
0.155″ x 0.400″ Microstrip
0.943″ x 0.084″ Microstrip
0.158″ x 0.600″ Microstrip
0.110″ x 0.600″ Microstrip
0.802″ x 0.150″ Microstrip
0.150″ x 0.155″ Microstrip
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
PCB
0.358″ x 0.150″ Microstrip
0.541″ x 0.070″ Microstrip
0.911″ x 0.560″ Microstrip
0.379″ x 0.560″ Microstrip
0.300″ x 0.084″ Microstrip
0.200″ x 0.240″ Microstrip
0.047″ x 0.240″ x 0.140″ Taper
0.463″ x 0.084″ Microstrip
0.089″ x 0.142″ Microstrip
0.657″ x 0.084″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF7S38075HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S38075HR3(HSR3) Test Circuit Component Designations and Values
Part
B1, B2
C1, C2, C4, C6
C3, C7
C5
C9
C10, C11
C12, C8
R1
Description
Small Ferrite Beads
2.7 pF Chip Capacitors
100 pF Chip Capacitors
22
μF,
35 V Electrolytic Capacitor
100
μF,
50 V Electrolytic Capacitor
470
μF,
63 V Electrolytic Capacitors
0.01
μF,
50 V Chip Capacitors
180 kΩ, 1/4 W Chip Resistor
Part Number
2743019447
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EMVY350ADA221MHA0G
MCHT101M1HB - 1017 - RF
EKME630ELL471MK25S
C1825C103J5RAC
CRCW12061803FKEA
Manufacturer
Fair Rite
ATC
ATC
Nippon Chemi - Con
Multicomp
Multicomp
Kemet
Vishay
MRF7S38075HR3 MRF7S38075HSR3
4
RF Device Data
Freescale Semiconductor
C5
C3
C10
B1
C2
C6
C12
R1
B2
C1
CUT OUT AREA
C7
C8
C9
C11
C4
MRF7S38705 Rev. C
Figure 2. MRF7S38075HR3(HSR3) Test Circuit Component Layout
MRF7S38075HR3 MRF7S38075HSR3
RF Device Data
Freescale Semiconductor
5
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