BYV32EB-200
14 August 2017
Dual ultrafast power diode
Product data sheet
1. General description
Dual ultrafast power diode in a SOT404 (D2PAK) surface-mountable plastic package.
2. Features and benefits
•
•
•
•
•
•
High reverse voltage surge capability
High thermal cycling performance
Low thermal resistance
Soft recovery characteristic minimizes power consuming oscillations
Surface-mountable package
Very low on-state loss
3. Applications
•
Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
V
RRM
I
O(AV)
I
RRM
V
ESD
Parameter
repetitive peak reverse
voltage
average output current δ = 0.5 ; T
mb
≤ 115 °C; SQW; both
diodes conducting;
Fig. 1; Fig. 2
repetitive peak reverse δ = 0.001 ; t
p
= 2 µs
current
electrostatic discharge
voltage
forward voltage
HBM; C = 250 pF; R = 1.5 kΩ; all pins
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
200
20
0.2
8
Unit
V
A
A
kV
Static characteristics
V
F
I
F
= 8 A; T
j
= 150 °C;
Fig. 4
I
F
= 20 A; T
j
= 25 °C
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C; ramp recovery;
Fig. 5
-
20
25
ns
-
-
0.72
1
0.85
1.15
V
V
WeEn Semiconductors
BYV32EB-200
Dual ultrafast power diode
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
A1
K
A2
K
anode 1
cathode[1]
anode 2
mounting base; cathode
1
2
3
Simplified outline
mb
Graphic symbol
A1
K
A2
sym125
D2PAK (SOT404)
[1]
it is not possible to make a connection to pin 2 of the SOT404 package
6. Ordering information
Table 3. Ordering information
Type number
BYV32EB-200
Package
Name
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3
leads (one lead cropped)
Version
SOT404
BYV32EB-200
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
14 August 2017
2 / 10
WeEn Semiconductors
BYV32EB-200
Dual ultrafast power diode
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
I
RRM
I
RSM
T
stg
T
j
V
ESD
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average output current
repetitive peak forward
current
non-repetitive peak
forward current
repetitive peak reverse
current
non-repetitive peak
reverse current
storage temperature
junction temperature
electrostatic discharge
voltage
12
P
tot
(W)
8
4.0
0.1
4
5
2.2
2.8
a = 1.57
1.9
Conditions
Min
-
-
Max
200
200
200
20
20
137
125
0.2
0.2
150
150
8
Unit
V
V
V
A
A
A
A
A
A
°C
°C
kV
DC
δ = 0.5 ; T
mb
≤ 115 °C; SQW; both
diodes conducting;
Fig. 1; Fig. 2
δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 115 °C; per
diode
t
p
= 8.3 ms; T
j(init)
= 25 °C; SIN; per diode
t
p
= 10 ms; T
j(init)
= 25 °C; SIN; per diode
δ = 0.001 ; t
p
= 2 µs
t
p
= 100 µs
-
-
-
-
-
-
-
-40
-
HBM; C = 250 pF; R = 1.5 kΩ; all pins
-
003aac978
15
P
tot
(W)
0.5
10
0.2
003aac979
δ= 1
0
0
4
8
I
F(AV)
(A)
12
0
0
5
10
I
F(AV)
(A)
15
Fig. 1. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values
Fig. 2. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
BYV32EB-200
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
14 August 2017
3 / 10
WeEn Semiconductors
BYV32EB-200
Dual ultrafast power diode
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
R
th(j-mb)
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient free air
10
Z
th(j-mb)
(K/W)
1
Conditions
with heatsink compound; both diodes
conducting
with heatsink compound; per diode;
Fig. 3
minimum footprint FR4 board
Min
-
-
-
Typ
-
-
50
Max
1.6
2.4
-
Unit
K/W
K/W
K/W
R
th(j-a)
003aac980
10
- 1
P
δ=
t
p
T
10
- 2
t
p
10
- 3
10
- 6
10
- 5
10
- 4
10
- 3
10
- 2
t
T
1
10
t
p
(s)
10
- 1
Fig. 3. Transient thermal impedance from junction to mounting base as a function of pulse width
BYV32EB-200
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
14 August 2017
4 / 10
WeEn Semiconductors
BYV32EB-200
Dual ultrafast power diode
9. Characteristics
Table 6. Characteristics
Symbol
V
F
I
R
Parameter
forward voltage
reverse current
Conditions
I
F
= 8 A; T
j
= 150 °C;
Fig. 4
I
F
= 20 A; T
j
= 25 °C
V
R
= 200 V; T
j
= 25 °C
V
R
= 200 V; T
j
= 100 °C
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C; ramp recovery;
Fig. 5
I
F
= 0.5 A; I
R
= 1 A; T
j
= 25 °C;
measured at reverse current = 0.25 A;
step recovery;
Fig. 6
Q
r
V
FR
recovered charge
forward recovery
voltage
32
I
F
(A)
24
Min
-
-
-
-
-
-
Typ
0.72
1
6
0.2
20
10
Max
0.85
1.15
30
0.6
25
20
Unit
V
V
µA
mA
ns
ns
Static characteristics
I
F
= 2 A; V
R
= 30 V; dI
F
/dt = 20 A/µs
I
F
= 1 A; dI
F
/dt = 10 A/µs;
Fig. 7
-
-
8
-
12.5
1
nC
V
003aac981
I
F
dl
F
dt
t
rr
16
(1)
(2)
(3)
time
25 %
Q
r
100 %
8
I
R
0
0
0.4
0.8
1.2
1.6
I
RM
003aac562
V
F
(V)
Fig. 5.
Fig. 4. Forward current as a function of forward voltage
BYV32EB-200
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
14 August 2017
5 / 10
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