GT30J121
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT30J121
High Power Switching Applications
Fast Switching Applications
•
•
•
Fourth-generation IGBT
Enhancement mode type
Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: t
f
= 0.05
μs
(typ.)
Low switching loss : E
on
= 1.00 mJ (typ.)
: E
off
= 0.80 mJ (typ.)
•
Low saturation voltage: V
CE (sat)
= 2.0 V (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
j
T
stg
Rating
600
±20
30
60
170
150
−55
to 150
Unit
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance
Symbol
R
th (j-c)
Max
0.735
Unit
°C/W
Marking
TOSHIBA
GT30J121
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-01
GT30J121
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Rise time
Switching time
Turn-on time
Turn-off delay time
Fall time
Turn-off time
Turn-on switching
loss
Turn-off switching
loss
Symbol
I
GES
I
CES
V
GE (OFF)
V
CE (sat)
C
ies
t
d (on)
t
r
t
on
t
d (off)
t
f
t
off
E
on
E
off
Inductive Load
V
CC
= 300 V, I
C
= 30 A
V
GG
= +15 V, R
G
= 24
Ω
(Note 1)
(Note 2)
Test Condition
V
GE
= ±20 V, V
CE
= 0
V
CE
= 600 V, V
GE
= 0
I
C
= 3 mA, V
CE
= 5 V
I
C
= 30 A, V
GE
= 15 V
V
CE
= 10 V, V
GE
= 0, f = 1 MHz
Min
―
―
3.5
―
―
―
―
―
―
―
―
―
―
Typ.
―
―
―
2.0
4650
0.09
0.07
0.24
0.30
0.05
0.43
1.00
0.80
Max
±500
1.0
6.5
2.45
―
―
―
―
―
―
―
―
mJ
―
μs
Unit
nA
mA
V
V
pF
Switching loss
Note 1: Switching time measurement circuit and input/output waveforms
V
GE
GT30J324
0
−V
GE
I
C
R
G
V
CE
0
V
CE
L
V
CC
I
C
90%
10%
t
d (off)
t
f
t
off
10%
10%
t
d (on)
t
r
t
on
90%
10%
90%
10%
Note 2: Switching loss measurement waveforms
V
GE
0
90%
10%
I
C
V
CE
E
off
E
on
5%
0
2
2006-11-01
GT30J121
I
C
– V
CE
60
Common emitter
50 Tc = 25°C
20
15
20
10
V
CE
– V
GE
Common emitter
V
CE
(V)
Tc =
−40°C
16
(A)
40
Collector current I
C
Collector-emitter voltage
9
12
30
8
60
30
4
IC = 10 A
0
0
4
8
12
16
20
20
VGE = 8 V
10
0
0
1
2
3
4
5
Collector-emitter voltage
V
CE
(V)
Gate-emitter voltage
V
GE
(V)
V
CE
– V
GE
20
Common emitter
20
V
CE
– V
GE
Common emitter
V
CE
(V)
Tc = 25°C
16
V
CE
(V)
Tc = 125°C
16
Collector-emitter voltage
12
Collector-emitter voltage
12
8
30
60
4
IC = 10 A
0
0
4
8
12
16
20
8
30
4
IC = 10 A
0
0
4
8
12
16
20
60
Gate-emitter voltage
V
GE
(V)
Gate-emitter voltage
V
GE
(V)
I
C
– V
GE
60
Common emitter
50 V
CE
= 5 V
4
Common emitter
V
CE (sat)
– Tc
Collector-emitter saturation voltage
V
CE (sat)
(V)
VGE = 15 V
3
60
(A)
Collector current I
C
40
30
2
30
20
1
IC = 10 A
10
Tc = 125°C
0
0
4
8
25
−40
12
16
20
0
−60
−20
20
60
100
140
Gate-emitter voltage
V
GE
(V)
Case temperature Tc (°C)
3
2006-11-01
GT30J121
C – V
CE
10000
500
Common emitter
RL = 10
Ω
Tc = 25°C
V
CE
, V
GE
– Q
G
20
400
16
1000
Collector-emitter voltage
Capacitance C
300
300
200
VCE = 100 V
100
4
8
100
Common emitter
30 f = 1 MHz
Tc = 25°C
10
0.1
0.3
1
3
10
30
100
300
1000
VGE = 0
Coes
Cres
0
0
40
80
120
160
0
200
Collector-emitter voltage
V
CE
(V)
Gate charge Q
G
(nC)
Safe Operating Area
100
IC max (pulsed)*
IC max (continuous)
100
μs*
10
DC operation
3
1 ms*
1
*: Single pulse
Tc
=
25°C
50
μs*
30
100
Reverse Bias SOA
30
(A)
(A)
Collector current I
C
Collector current I
C
10
3
1
Curves must be
derated linearly
0.3
with increase in
temperature.
0.1
1
3
10
30
100
10 ms*
0.3
300
1000
0.1
1
Tj
≤
125°C
VGE = 15 V
RG = 24
Ω
3
10
30
100
300
1000
Collector-emitter voltage
V
CE
(V)
Collector-emitter voltage V
CE
(V)
r
th
(t) – t
w
Transient thermal resistance r
th
(t) (°C/W)
10
2
10
1
10
0
10
−1
10
−2
10
−3
10
−4
Tc = 25°C
−5
10
10
−4
10
−3
10
−2
10
−1
10
0
10
1
10
2
Pulse width
t
w
(s)
5
2006-11-01
Gate-emitter voltage
300
200
12
V
GE
(V)
3000
Cies
(pF)
V
CE
(V)
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
