PD - 95278
IRF7475PbF
HEXFET
®
Power MOSFET
Applications
l
High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
l
Lead-Free
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
V
DSS
12V
15m
:
@V
GS
= 4.5V
1
8
7
R
DS(on)
max
Qg
19nC
S
S
S
G
A
A
D
D
D
D
2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
12
± 12
11
7.0
88
2.5
1.6
0.02
-55 to + 150
Units
V
g
Power Dissipation
g
Power Dissipation
c
A
W
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W/°C
°C
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
f
Notes
through
are on page 10
www.irf.com
1
09/21/04
IRF7475PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
12
–––
–––
–––
0.6
–––
–––
–––
–––
–––
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.014
11.5
20
–––
3.2
–––
–––
–––
–––
–––
13
2.6
1.5
3.9
5.0
5.4
17
7.5
33
13
7.5
1590
1310
260
–––
–––
15
50
2.0
–––
100
250
200
-200
–––
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 6.0V
ns
nC
nC
V
DS
= 6.0V
V
GS
= 4.5V
I
D
= 7.0A
S
nA
V
mV/°C
µA
V
mΩ
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 4.5V, I
D
= 8.8A
V
GS
= 2.8V, I
D
V/°C Reference to 25°C, I
D
= 1mA
f
= 5.5A
f
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 9.6V, V
GS
= 0V
V
DS
= 9.6V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
V
DS
= 6.0V, I
D
= 8.8A
See Fig. 16
V
DS
= 10V, V
GS
= 0V
V
DD
= 6.0V, V
GS
= 4.5V
I
D
= 8.8A
Clamped Inductive Load
f
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
dh
Typ.
–––
–––
–––
Max.
180
8.8
0.25
Units
mJ
A
mJ
Repetitive Avalanche Energy
–––
–––
–––
–––
–––
–––
–––
–––
42
44
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
11
A
88
1.3
63
66
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ãh
S
p-n junction diode.
T
J
= 25°C, I
S
= 8.8A, V
GS
= 0V
f
T
J
= 25°C, I
F
= 8.8A, V
DD
= 10V
di/dt = 100A/µs
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRF7475PbF
100
VGS
TOP
10V
8.0V
4.5V
3.5V
3.0V
2.8V
2.25V
BOTTOM 2.0V
100
VGS
10V
8.0V
4.5V
3.5V
3.0V
2.8V
2.25V
BOTTOM 2.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
10
2.0V
1
2.0V
1
20µs PULSE WIDTH
T
J
= 25°C
0.1
0.1
0.1
20µs PULSE WIDTH
T
J
= 150°C
1
10
100
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
R
DS(on)
, Drain-to-Source On Resistance
I
D
= 11A
V
GS
= 4.5V
ID, Drain-to-Source Current (A)
1.5
10
T
J
= 150°C
(Normalized)
1.0
T
J
= 25°C
0.5
V
DS
= 10V
20µs PULSE WIDTH
1
1
2
3
4
5
0.0
-60
-40
-20
0
20
40
60
80
100
120
140
160
VGS, Gate-to-Source Voltage
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7475PbF
10000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
6
I
D
= 7.0A
V
DS
= 12V
V
DS
= 6.0V
5
C, Capacitance (pF)
4
C
iss
1000
C
oss
3
2
1
C
rss
100
1
10
100
0
0
5
10
15
20
V
DS
, Drain-to-Source voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
I
SD
, Reverse Drain Current (A)
T
J
= 150ºC
10
I
D
, Drain-to-Source Current (A)
100
10µsec
10
1msec
10msec
1
T
J
= 25ºC
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
T
C
= 25ºC
T
J
= 150ºC
Single Pulse
0.1
0.1
1
10
100
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF7475PbF
12
1.6
V
GS(th)
, Gate Threshold Voltage (V)
I
D
, Drain Current (A)
9
1.4
I
D
= 250µA
1.2
6
3
1.0
0
0.8
25
50
75
100
125
150
-75
-50
-25
0
25
50
75
100
125
150
T
C
, Case Temperature ( ° C)
T
J
, Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
1
10
100
10
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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