AS6C4008A
Rev. 1.12
512K X 8 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.12
Description
Initial Issue
Issue Date
May 15, 2012
Alliance Memory, Inc.
551 Taylor Way, Suite #1, San Carlos, CA 94070
Phone: 650-610-6800
0
AS6C4008A
Rev. 1.12
512K X 8 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The AS6C4008A is a 4,194,304-bit low power
CMOS static random access memory organized as
524,288 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The AS6C4008A is well designed for very low power
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
The AS6C4008A operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
FEATURES
Fast access time : 55ns
Low power consumption:
Operating current : 30mA (TYP.)
Standby current : 1A (TYP.) SL-version
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 32-pin 450 mil SOP
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm STSOP
36-ball 6mm x 8mm TFBGA
32-pin 600 mil P-DIP
32-pin 400 mil TSOP-II
PRODUCT FAMILY
Product
Family
AS6C4008A
Operating
Temperature
-40 ~ 85℃
Vcc Range
2.7 ~ 3.6V
Speed
55ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
1µA(SL)
30mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
Vcc
Vss
A0 - A18
DQ0 – DQ7
DECODER
512Kx8
MEMORY ARRAY
CE#
WE#
OE#
V
CC
V
SS
NC
A0-A18
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
WE#
OE#
CONTROL
CIRCUIT
PIN CONFIGURATION
Alliance Memory, Inc.
551 Taylor Way, Suite #1, San Carlos, CA 94070
Phone: 650-610-6800
1
AS6C4008A
Rev. 1.12
512K X 8 BIT LOW POWER CMOS SRAM
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
SOP/P-DIP
Vcc
A15
A17
WE#
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
A11
A9
A8
A13
WE#
A17
A15
Vcc
A18
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
Vss
DQ2
DQ1
DQ0
A0
A1
A2
A3
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
AS6C4008A
A0
DQ4
DQ5
Vss
Vcc
DQ6
A18
A1
A2
NC
WE#
NC
A9
A10
A11
AS6C4008A
TSOP-I/STSOP
A18
A16
A14
A12
A7
A6
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TSOP-II
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
A17
WE#
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
AS6C4008A
A
B
C
D
E
F
G
H
A3
A4
A5
A6
A7
A8
A5
DQ0
DQ1
Vcc
Vss
A4
A3
A2
A1
A0
DQ0
A17
DQ2
A15 DQ3
DQ7 OE# CE# A16
A12
DQ1
A13
A14
DQ2
1
2
3
4
TFBGA
5
6
VSS
Alliance Memory, Inc.
551 Taylor Way, Suite #1, San Carlos, CA 94070
Phone: 650-610-6800
2
AS6C4008A
Rev. 1.12
512K X 8 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 4.6
-0.5 to V
CC
+0.5
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
L
L
L
OE#
X
H
L
X
WE#
X
H
H
L
I/O OPERATION
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB
,I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
I
CC
,I
CC1
H = V
IH
, L = V
IL
, X = Don't care.
Alliance Memory, Inc.
551 Taylor Way, Suite #1, San Carlos, CA 94070
Phone: 650-610-6800
3
AS6C4008A
Rev. 1.12
512K X 8 BIT LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
V
CC
*1
Input High Voltage
V
IH
*2
Input Low Voltage
V
IL
Input Leakage Current
I
LI
V
CC
≧
V
IN
≧
V
SS
Output Leakage
V
CC
≧
V
OUT
≧
V
SS
,
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -1mA
Output Low Voltage
V
OL
I
OL
= 2mA
Cycle time = Min.
CE# = V
IL
and
I
CC
- 55
I
I/O
= 0mA
Other pins at V
IL
or V
IH
Average Operating
Power supply Current
Cycle time = 1µs
CE#
≦
0.2V and
I
CC1
I
I/O
= 0mA
Other pins at 0.2V or V
CC
-0.2V
CE# = V
IH
or CE2 = V
IL,
I
SB
other pins at V
IL
or V
IH
Standby Power
Supply Current
CE#
≧V
CC
-0.2V
Others at 0.2V or
V
CC
- 0.2V
SLI
*5
MIN.
2.7
2.2
- 0.2
-1
-1
2.2
-
-
TYP.
3.0
-
-
-
-
2.7
-
30
*4
MAX.
3.6
V
CC
+0.3
0.6
1
1
-
0.4
40
UNIT
V
V
V
µA
µA
V
V
mA
-
4
5
mA
-
-
-
-
0.3
1
1
1
1.25
3
3
12
mA
µA
µA
µA
25℃
40℃
I
SB1
SLI
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
5. This parameter is measured at V
CC
= 3.0V
Alliance Memory, Inc.
551 Taylor Way, Suite #1, San Carlos, CA 94070
Phone: 650-610-6800
4
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