Thyristors
6 Amp Sensitive & Standard SCRs
Sxx06xSx & Sxx06x Series
Description
RoHS
This Sxx06x SCR series is ideal for uni-directional switch
applications such as phase control, heating, motor speed
controls, converters/rectifiers and capacitive discharge
ignitions.
These SCRs have a low gate current trigger level of 0.2 to
15 mA at approximately 1.5V, with a sensitive version of
this series having a gate trigger current less than 500µA.
The sensitive gate SCR version is easily triggered by sense
coils, proximity switches, and microprocessors.
Features & Benefits
• Halogen free and
RoHS compliant
Agency Approval
Agency
Agency File Number
L Package: E71639
• Surge capability up to
100 A at 60 Hz half cycle
•L
-Package is UL
recognized for 2500Vrms
• Glass – passivated
junctions
• Voltage capability up
to 1000 V
Applications
Main Features
Symbol
I
T(RMS)
V
DRM
/ V
RRM
I
GT
Value
6
400 to 1000
0.2 to 15
Unit
A
V
mA
Typical applications are capacitive discharge systems for
strobe lights, nailers, staplers and gas engine ignition. Also,
AC control & rectification for power tools, home/brown
goods and white goods appliances and 2-wheeler rectifier/
battery regulators.
Internally constructed isolated packages are offered for
ease of heat sinking with highest isolation voltage.
Schematic Symbol
Additional Information
A
Datasheet
Resources
Samples
K
G
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/16/18
Thyristors
6 Amp Sensitive & Standard SCRs
Absolute Maximum Ratings — Sensitive SCRs
Symbol
Parameter
Test Conditions
Sxx06LSy
I
T(RMS)
RMS on-state current
Sxx06NSy
Sxx06RSy
Sxx06DSy
Sxx06VSy
Sxx06LSy
I
T(AV)
Average on-state current
Sxx06NSy
Sxx06RSy
Sxx06DSy
Sxx06VSy
T
C
= 80°C
T
C
= 95°C
T
C
= 80°C
TC = 95°C
3.8
A
6
A
Value
Unit
I
TSM
I
2
t
di/dt
I
GTM
P
G(AV)
T
stg
T
J
Peak non-repetitive surge current
I
2
t Value for fusing
Critical rate of rise of on-state current
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
single half cycle; f = 50Hz;
T
J
(initial) = 25°C
single half cycle; f = 60Hz;
T
J
(initial) = 25°C
t
p
= 8.3 ms
f = 60Hz; T
J
= 110°C
T
J
= 110°C
T
J
= 110°C
83
A
100
41
100
1
0.1
-40 to 150
-40 to 110
A
2
s
A/μs
A
W
°C
°C
Note: xx = voltage, y = sensitivity
Absolute Maximum Ratings — Standard SCRs
Symbol
Parameter
Sxx06L
I
T(RMS)
RMS on-state current
Sxx06N
Sxx06R
Sxx06D
Sxx06V
Sxx06L
I
T(AV)
Average on-state current
Sxx06N
Sxx06R
Sxx06D
Sxx06V
T
C
= 100°C
T
C
= 110°C
T
C
= 100°C
T
C
= 110°C
3.8
A
6
A
Value
Unit
I
TSM
I
2
t
di/dt
I
GTM
P
G(AV)
T
stg
T
J
Note: xx = voltage
Peak non-repetitive surge current
I
2
t value for fusing
Critical rate-of-rise of on-state current
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
single half cycle; f = 50Hz;
T
J
(initial) = 25°C
single half cycle; f = 60Hz;
T
J
(initial) = 25°C
t
p
= 8.3 ms
f = 60Hz; T
J
=125°C
T
J
= 125°C
T
J
= 125°C
83
A
100
41
100
2
0.5
-40 to 150
-40 to 125
A
2
s
A/μs
A
W
°C
°C
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/16/18
Thyristors
6 Amp Sensitive & Standard SCRs
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
— Sensitive SCRs
Symbol
I
GT
V
GT
dv/dt
V
GD
V
GRM
I
H
t
q
t
gt
Test Conditions
V
D
= 6V R
L
= 100
Ω
V
D
= 6V R
L
= 100
Ω
V
D
= V
DRM
; R
GK
= 1kΩ; T
J
= 110°C
V
D
= V
DRM
R
L
= 3.3 kΩ T
J
= 110°C
I
GR
= 10μA
I
T
= 20mA (initial)
I
T
= 2A; t
p
= 50µs; dv/dt=5V/µs; di/dt=-30A/µs
I
G
= 2 x I
GT
PW = 15µs I
T
= 12A
MAX.
MAX.
TYP
.
MIN.
MIN.
MAX.
MAX.
TYP
.
6
50
4
Value
Sxx06xS2
200
0.8
8
0.2
6
8
45
5
Sxx06xS3
500
Unit
μA
V
V/μs
V
V
mA
μs
μs
Note: xx = voltage, x = package
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
— Standard SCRs
Symbol
I
GT
V
GT
Test Conditions
V
D
= 12V R
L
= 60
Ω
V
D
= 12V R
L
= 60
Ω
400V
V
D
= V
DRM
; gate open; T
J
= 100°C
dv/dt
V
D
= V
DRM
; gate open; T
J
= 125°C
V
GD
I
H
t
q
t
gt
V
D
= V
DRM
R
L
= 3.3 kΩ T
J
= 125°C
I
T
= 200mA (initial)
I
T
= 2A; t
p
= 50µs; dv/dt=5V/µs; di/dt=-30A/µs
I
G
= 2 x I
GT
PW = 15µs I
T
= 12A
600V
800V
1000V
400V
600V
800V
MIN.
MAX.
MAX.
TYP
.
MIN.
MAX.
MAX.
Value
Sxx06x
15
1.5
350
300
250
100
250
225
200
0.2
30
35
2
V
mA
μs
μs
V/μs
Unit
mA
V
Note: xx = voltage, x = package
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/16/18
Thyristors
6 Amp Sensitive & Standard SCRs
Static Characteristics
Symbol
V
TM
Test Conditions
I
T
= 12A; t
p
= 380 µs
Sxx06xyy
T
J
= 25°C
T
J
= 110°C
T
J
= 25°C
Sxx06x
400 – 600V
400 – 600V
400 – 800V
1000V
400 – 800V
1000V
400 – 800V
MAX.
MAX.
Value
1.6
5
250
10
20
200
3000
500
μA
Unit
V
I
DRM
/ I
RRM
V
DRM
= V
RRM
T
J
= 100°C
T
J
= 125°C
Note: xx = voltage, x = package, yy = sensitivity
Thermal Resistances
Symbol
Parameter
Sxx06RSy / Sxx06NSy
Sxx06LSy
Sxx06VSy
R
θ(J-C)
Junction to case (AC)
Sxx06DSy
Sxx06R / Sxx06N
Sxx06L
Sxx06V
Sxx06D
Sxx06RSy
Sxx06LSy
R
θ(J-A)
Junction to ambient
Sxx06VSy
Sxx06R
Sxx06L
Sxx06V
Note: xx = voltage, y = sensitivity
Value
2.6
4.3
2.4
1.8
2.5
4.0
2.3
1.7
40
65
85
40
50
70
Unit
°C/W
°C/W
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/16/18
Thyristors
6 Amp Sensitive & Standard SCRs
Figure 1: Normalized DC Gate Trigger Current
vs. Junction Temperature (Sensitive SCR)
4.0
Figure 2: Normalized DC Gate Trigger Current
vs. Junction Temperature (Standard SCR)
4.0
Ratio of I
GT
/ I
GT
(T
J
= 25ºC)
Ratio of I
GT
/I
GT
(T
J
=25ºC)
3.0
3.0
2.0
2.0
1.0
1.0
0.0
0.0
-40
-15
10
35
60
85
110
125
-40
-15
10
35
60
85
110
Junction Temperature (T
J
) - (ºC)
Junction Temperature (T
J
) - (ºC)
Figure 3: Normalized DC Gate Trigger Voltage
vs. Junction Temperature
2.0
Figure 4: Normalized DC Holding Current
vs. Junction Temperature
2.0
Ratio of V
GT
/ V
GT
(T
J
= 25ºC)
1.5
Ratio of I
H
/ I
H
(T
J
= 25ºC)
-15
10
35
60
85
110
125
1.5
1.0
1.0
0.5
0.5
0.0
-40
0.0
-40
-15
10
35
60
85
110
125
Junction Temperature (T
J
) - (ºC)
Junction Temperature (T
J
) - (ºC)
Figure 5: On-State Current vs. On-State Voltage
(Typical)
30
T
J
= 25°C
25
Figure 6: Power Dissipation (Typical) vs. RMS On-State
Current
6
5
Instantaneous On-State
Current (i
T
) -Amps
20
Average On-State Power
Dissipation [P
D(AV)
] - (Watts)
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
4
15
3
10
2
5
1
0
0
0
1
2
3
4
5
6
Instantaneous On-State Voltage (v
T
) - Volts
RMS On-State Current [I
T(RMS)
] - (Amps)
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/16/18
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
